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Gold etching method

A technology of dry etching and gold layer, which is applied in metal material coating process, process for producing decorative surface effect, decorative art, etc., can solve the problems of difficult removal of etching by-products, easy generation of gold, etc., and achieve improvement Device performance and yield improvement effect

Pending Publication Date: 2020-10-27
SHANGHAI IND U TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for etching gold, which is used to solve the problem that difficult-to-remove etching by-products are easily produced during the etching process of gold in the prior art

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Embodiment 1

[0034] like Figure 2 to Figure 9 As shown, the present embodiment provides a gold etching method, especially a gold dry etching method, and the gold dry etching method includes the following steps:

[0035] like figure 2 As shown, step 1) is first performed to provide a substrate.

[0036] The base can be a semiconductor substrate, such as a silicon substrate, a Ge substrate, a SiGe substrate, an SOI substrate or a GOI substrate, etc., or an insulating substrate, such as silicon nitride, silicon dioxide, silicon oxynitride , flexible polymer substrates, glass substrates, sapphire substrates, silicon carbide substrates, etc., or III-V substrates, such as gallium nitride substrates, gallium arsenide substrates, etc., can be based on the actual device Requirements, select a suitable semiconductor material as the substrate, which is not limited here. In this specific embodiment, the base is a silicon substrate 201, and the surface of the silicon substrate 201 has an oxide lay...

Embodiment 2

[0055] This embodiment provides a method for etching gold, the basic steps of which are as in Embodiment 1, wherein the difference from Embodiment 1 is that the material of the metal hard mask 204 includes titanium, step 5) wet etching The etching solution used to remove the patterned metal hard mask 206 includes a mixed solution of ammonia and hydrogen peroxide.

[0056] As mentioned above, the etching method of gold of the present invention has the following beneficial effects:

[0057] The present invention adds a metal hard mask process during the dry etching of gold, and can remove the residual gold by-products while removing the metal hard mask.

[0058] The gold dry etching process of the present invention can avoid residues of gold etching by-products, effectively improve device performance, and increase yield.

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Abstract

The invention provides a gold etching method. The gold etching method comprises the steps of 1) providing a substrate; 2) depositing a gold layer on the substrate; 3) forming a graphic metal hard maskon the gold layer; 4) performing dry etching on the gold layer based on the graphic metal hard mask to form a graphic gold layer; and 5) removing the graphic metal hard mask on the surface of the graphic gold layer by wet etching, and simultaneously removing by-products generated by dry etching of the gold layer covering the surface of the side wall of the graphic metal hard mask. According to the method, a metal hard mask process is added during dry etching of gold, residual gold by-products can be completely removed while the metal hard mask is removed, the device performance can be effectively improved, and the yield is increased.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, in particular to a gold etching method. Background technique [0002] Gold is used extensively in semiconductor wafer fabrication processes, especially microelectromechanical systems (MEMS) wafer fabrication. However, due to its very stable chemical properties, gold cannot be etched by dry chemical reaction. At present, the dry etching of gold is directly removed by ion bombardment. However, if the traditional photoresist is used as the gold etching mask after the gold etching, the remaining gold 101 surface will remain the etching by-products 102 bombarded during the etching process. The main component of these etching by-products 102 is gold. It is very difficult to remove due to the stable chemical properties in the method of cleaning, resulting in residual etching by-products 102 affecting device performance, such as figure 1 shown. Contents of the invention ...

Claims

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Application Information

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IPC IPC(8): B81C1/00H01L21/02H01L21/3213
CPCB81C1/00396B81C1/00531B81C1/00849H01L21/32136H01L21/32139H01L21/02071
Inventor 黄志刚
Owner SHANGHAI IND U TECH RES INST