Method for preparing pure-phase MXene by using plasma etching technology

A plasma and plasma source technology, applied in the field of plasma etching technology to prepare pure phase MXene, can solve the problems of reducing MXene, unable to prepare pure phase, unable to obtain pure phase materials, etc., to maintain purity and maintain purity , Optimizing the effect of energy storage properties

Pending Publication Date: 2020-10-30
YANCHENG INST OF TECH
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Problems solved by technology

[0011] Technical problem to be solved: This application mainly proposes a method for preparing pure-phase MXene by using plasma etching technology, which solves the problems in the prior art that the pure-phase material cannot be obtained, seriously affects the electronic properties of MXene, and reduces the cost of MXene electrode materials. Technical issues such as energy storage capacity and inability to prepare pure-phase MXene materials

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  • Method for preparing pure-phase MXene by using plasma etching technology
  • Method for preparing pure-phase MXene by using plasma etching technology

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Embodiment 1

[0041] A kind of method utilizing plasma etching technology to prepare pure phase MXene comprises the steps:

[0042] Step 1: The ratio of raw material powder is 2:2:1 by mass, weigh Mo powder, Ca powder and C powder respectively, totaling 30g, put them in the agate ball mill jar, and follow the mass ratio of powder: ball stone : Anhydrous ethanol ball milling medium = 1:4:1 Add ball stones and anhydrous ethanol ball milling medium, in the ball mill at a speed of 400 r / min, mix and mill for 4 hours, and the obtained uniform mixture is dried in a vacuum oven at 80°C 12h;

[0043] The second step: weigh 5g / part of the mixture obtained in the first step, place it in a stainless steel mold with a diameter of 20mm, pressurize 50MPa uniaxially, and cold press it into a cylindrical green body for use;

[0044] Step 3: Place the cylindrical green body obtained in the second step in a high-temperature tube furnace, enter a nitrogen protective atmosphere for pressureless sintering, and...

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Abstract

The invention discloses a method for preparing pure-phase MXene by using a plasma etching technology. According to the invention, Mo2Ca2C is used as a precursor, conventional plasma etching equipmentis used, CF4/Ar gas is used for replacing a strongly-corrosive HF solution as an etching agent, and a plasma etching technology is conuducted to prepare the pure-phase MXene; the etching agent is excited into a fluorine-containing plasma air mass under the action of radio frequency, so on one hand, the F element with selective etching capability is reserved, and on the other end, interference of an O element source and an H element source is eliminated and the purity of the etching agent is kept to the greatest extent; furthermore, inert gas Ar contained in the etching agent forms the chargedplasma air mass with relatively large molecular weight under the action of radio frequency, and an electric field generated by bias voltage of an etching cavity is used for accelerating the moving speed of an Ar charged group and generating a bombardment effect so as to strip a multilayer MXene material generated by etching into a single-layer MXene material; and compared with a traditional liquid-phase ultrasonic stripping method, adsorption interference of impurity groups in a liquid phase is eliminated in the invention.

Description

technical field [0001] The invention belongs to the technical field of preparation methods of MXene materials, in particular to a method for preparing pure-phase MXene by using plasma etching technology. Background technique [0002] Two-dimensional materials have attracted widespread attention in the field of energy storage. Among them, a new type of two-dimensional metal carbon / nitride named MXene with a graphene-like structure, because of its unique physical and chemical properties, has become an energy storage technology. A bright new star in the field. The surface of MXene prepared by traditional liquid-phase etching method contains attachment groups, which have an important impact on the electrochemical properties. It is planned to adopt dry plasma etching technology, based on dielectric-free etching in microenvironment, to improve the surface properties of MXene and realize the improvement of material energy storage efficiency. [0003] Energy storage and conversi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/949
CPCC01B32/949C01P2004/20C01P2006/40C01P2004/61
Inventor 张义东邵荣丁建飞许伟颜秀花
Owner YANCHENG INST OF TECH
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