Micro-LED chip with epitaxial growth in selected area and preparation method of Micro-LED chip

Abstract

The invention discloses an epitaxial growth Micro-LED chip in a selected area and a preparation method of the epitaxial growth Micro-LED chip. The chip of a flip chip structure comprises a substrate,an n-GaN layer, an insulating dielectric layer and an ITO transparent conductive layer sequentially arranged from top to bottom. The insulating dielectric layer is provided with a chip epitaxial layerarray penetrating through the insulating dielectric layer, the n-GaN layer is exposed at the edge of one side of the insulating dielectric layer to form a mesa structure, the surface of the insulating dielectric layer is provided with an n electrode, the surface of the ITO transparent conductive layer is provided with a p electrode, and the p electrode and the n electrode are fixedly connected with a target substrate. In the preparation process, selective etching is carried out on the insulating dielectric layer to obtain a micropore array, and an epitaxial layer structure of the Micro-LED chip grows in micropores. According to the method, surface damage caused in the dry etching process of the epitaxial structure of the Micro-LED chip can be avoided, the Micro-LEDs are isolated from oneanother through the insulating dielectric layers, crosstalk can be prevented, and the display effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting diodes, in particular, the invention relates to an area-selective epitaxial growth Micro-LED chip and a preparation method thereof. Background technique [0002] Due to the advantages of small size, high resolution, low energy consumption, and high reliability, Micro-LED has great application value in high-resolution display, augmented reality, virtual reality, wearable electronics and other fields. Usually, the chip size of Micro-LED is less than 100 μm, and in the fields of virtual reality and augmented reality, its size is required to be as small as less than 5 μm. At present, for group III nitride Micro-LEDs, it is usually prepared by a combination of standard photolithography and dry etching. However, the process of dry etching the epitaxial structure will inevitably cause surface damage to the Micro-LED chip, which increases the surface non-radiative recombination rate ...

AI Technical Summary

Problems solved by technology

Although sidewall passivation can reduce plasma damage during dry etching to a certain extent, even if more advanced atomic layer deposition (ALD) is used to replace standard plasma-enhanced chemical vapor deposition (PECVD) technology, this improvement is also smaller

In addition, the electrical injection efficiency of the p-GaN layer will be reduced during the passivation process, which will have a new impact on the electrical performance of the Micro-LED chip

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