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Ultrafine silica powder for patch type discrete device and preparation method of ultrafine silica powder

A discrete device, patch technology, applied in the direction of electric solid device, semiconductor device, semiconductor/solid state device components, etc., can solve the problems of low yield, low efficiency of ultrafine powder, wide particle size distribution, etc., and achieve the manufacturing cost. Low, reasonable particle size distribution, stable particle size

Active Publication Date: 2020-11-06
JIANGSU NOVORAY NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] New SMT patch discrete devices are used in hot fields such as automotive electronics and energy-saving lighting. New requirements are also put forward for electronic-grade silicon micropowder fillers used in discrete device packaging. The particle size distribution of silicon micropowder fillers currently available on the market is wide. The particle size is large, and it is mainly used for large body packaging types. With the development of discrete device packaging technology towards miniaturization, light weight, and thinning, it is necessary to further reduce the particle size during use to improve the fluidity and overflow characteristics of the corresponding plastic packaging compound. , there is an urgent need for an ultra-fine silica powder that can improve the fluidity and overflow performance of the molding compound. At present, the domestic intermittent ball mill produces ultra-fine powder with low efficiency, low yield, and wide particle size distribution, which cannot meet market needs.

Method used

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  • Ultrafine silica powder for patch type discrete device and preparation method of ultrafine silica powder
  • Ultrafine silica powder for patch type discrete device and preparation method of ultrafine silica powder
  • Ultrafine silica powder for patch type discrete device and preparation method of ultrafine silica powder

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1, a preparation method of ultrafine silicon micropowder for chip-type discrete devices, which is used as a filler for chip-type discrete devices, and its preparation method steps are as follows:

[0023] (1) Raw material selection: select SiO 2 High-purity crystalline quartz sand with content ≥99.0% is used as raw material;

[0024] (2) After the raw materials are magnetically separated, they are fed into the drum ball mill for grinding. After grinding, the materials are then classified by an airflow classifier to obtain ultrafine silicon powder with D50 = 3 μm, which is used as a silicon powder filler for chip-type discrete devices.

[0025] The particle size of the raw material high-purity crystalline quartz sand is 10-30 mesh, the magnetic substance content is ≤10.0ppm, and the electrical conductivity Ec is ≤4μs / cm.

[0026] The chemical composition of the raw material high-purity crystalline quartz sand is: SiO 2 ≥99.0%, Al 2 o 3 ≤0.8%, Fe 2 o 3 ≤0...

Embodiment 2

[0030] Embodiment 2, a preparation method of ultrafine silicon micropowder for chip-type discrete devices, which is used as a filler for chip-type discrete devices, and its preparation method steps are as follows:

[0031] (1) Raw material selection: select SiO 2 High-purity crystalline quartz sand with content ≥99.0% is used as raw material;

[0032] (2) After the raw materials are magnetically separated, they are fed into the drum ball mill for grinding. After grinding, the materials are then classified by an air classifier to obtain D 50 = 2.838μm ultrafine silicon powder, used for silicon powder filling of SMD discrete devices.

[0033] The particle size of the raw material high-purity crystalline quartz sand is 16-26 mesh, Ec≤2μs / cm.

[0034] The chemical composition of the raw material high-purity crystalline quartz sand is: SiO 2 ≥99.5%, Al 2 o 3 ≤0.4%, Fe 2 o 3 ≤0.01%, Na + ≤2ppm, Cl - ≤3ppm.

[0035]The drum-type ball milling equipment is provided with a cer...

Embodiment 3

[0038] Embodiment 3, a kind of preparation method experiment of superfine filler silicon micropowder for patch type discrete device, its steps are as follows,

[0039] (1) Comparing different varieties of crystalline quartz sand, select high-purity crystalline quartz sand variety C with a particle size of 16-26 mesh in a certain place in Jiangsu. The chemical composition of crystalline quartz sand is as follows:

[0040]

[0041]

[0042] (2) Experiment:

[0043]

[0044] A set of products with a specific particle size distribution are obtained through DOE experiments:

[0045]

[0046] According to the advantage of production capacity, it is preferred to use 30t grinding media.

[0047] To obtain a product with a specific particle size distribution:

[0048]

[0049]

[0050] SMD discrete devices need a product with narrow distribution and low viscosity, so we prefer the product of experiment 3.

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Abstract

The invention relates to a preparation method of ultrafine silicon micropowder for a patch type discrete device. The ultrafine silicon micropowder is used as a filler for the patch type discrete device, and the preparation method comprises the following steps: selecting high-purity crystalline quartz sand with SiO2 content of more than or equal to 99.0% as a raw material; feeding the raw materialsinto drum-type ball milling equipment to be ground after being subjected to magnetic separation, subjecting the ground materials to classifying through an airflow classifier to obtain the ultrafine silica micropowder with the D50 being 1.5-3.5 microns, the D90 being 5-8 microns and the D100 being 11-16 microns which is used as silica powder filler of the patch type discrete device. According to the method disclosed by the invention, the silica powder product with specific particle size distribution, regular particle morphology and high purity can be prepared, the particle size distribution ofthe product is reasonable, the viscosity of the product is low, the flowability of the epoxy plastic is improved, and the flash characteristic is improved. The wettability with a chip is better in the packaging process of the patch type discrete device, and the electrical property problem caused by layering is effectively solved.

Description

technical field [0001] The invention relates to the technical field of deep processing of inorganic non-metallic materials, in particular to a method for preparing ultrafine fillers for chip-type discrete devices. Background technique [0002] At present, China's semiconductor discrete device industry has already occupied a pivotal position in the international market and maintained a continuous, rapid and stable development. With the continuous heating up of the electronic machine, consumer electronics and other markets, there is still a lot of room for development of semiconductor discrete devices, and the development trend of discrete device packaging technology still takes SMT chip discrete devices as the development direction, towards the direction of miniaturization Developed to meet the needs of miniaturization, light weight and thinning of various electronic equipment. From the commonly used SOT-23, SOD-123 type to smaller size, such as SOT-123 / 923, SOD-723 / 923 and ...

Claims

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Application Information

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IPC IPC(8): C01B33/12H01L23/29
CPCC01B33/12H01L23/298C01P2004/61C01P2006/80C01P2006/82
Inventor 李晓冬周晓兵曹家凯高娟朱刚
Owner JIANGSU NOVORAY NEW MATERIAL CO LTD
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