Silver nanowire and preparation method thereof

A technology of silver nanowires and halides, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as environmental hazards, high cost, and impact on applications, so as to avoid synthesis steps and ensure Effect of parallelism and uniform diameter

Inactive Publication Date: 2020-11-27
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The synthesis of silver nanowires has a crucial impact on the final performance of its transparent electrodes. In the traditional preparation of silver nanowires, it is usually necessary to add high molecular polymers, such as: polyvinylpyrrolidone, etc., as a control for the growth of silver nanowires. agent to adjust the orientation growth of silver nanowires, but these polymers are usually insulating, and after the reaction, they will remain on the surface of silver nanowires to form an insulating coating, which is difficult to remove and will seriously reduce the conductivity of silver nanowire transparent electrodes. Affect its application in the field of optoelectronics
In addition, most of the reducing agents used in the preparation of silver nanowires are liquid polyhydric alcohols, which are expensive, and the ketone organic compounds generated after the reaction are easy to cause harm to the environment

Method used

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  • Silver nanowire and preparation method thereof
  • Silver nanowire and preparation method thereof
  • Silver nanowire and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Weigh 2g of silver chloride and add it to 200mL (0.123g / mL) of trisodium citrate aqueous solution, and ultrasonically obtain a uniform silver chloride dispersion;

[0036] The dispersion liquid was added to the lining of the reaction kettle, and reacted at 140° C. for 200 minutes to obtain a mixture; and the mixture was centrifuged to obtain the silver nanowires.

[0037] figure 1 and figure 2 It is the X-ray diffraction collection of patterns and the transmission electron microscope photo of the silver nanowire prepared in embodiment 1, by figure 1 It can be seen that the product is a metallic silver phase, and the crystallization is complete. figure 2 It can be seen that the product is silver nanowires, and the surface is clean without residue. After inspection, the obtained silver nanowires have a diameter of 45-55 nm and a length of 15-25 μm.

Embodiment 2

[0039] Weigh 2g of silver bromide and add it to 200mL (0.094g / mL) of trisodium citrate aqueous solution, and ultrasonically obtain a uniform silver bromide dispersion;

[0040] The dispersion liquid was added to the lining of the reaction kettle, and reacted at 140° C. for 200 minutes to obtain a mixture; and the mixture was centrifuged to obtain the silver nanowires.

[0041] image 3 It is the transmission electron micrograph of the silver nanowire prepared in embodiment 2, by image 3 It can be seen that the surface of the silver wire is clean without residue, and there are a few granular silver. After inspection, the obtained silver nanowires have a diameter of 45-55 nm and a length of 15-25 μm.

Embodiment 3

[0043] Weigh 1g of silver iodide and add it to 100mL (0.075g / mL) of trisodium citrate aqueous solution, and ultrasonically obtain a uniform silver iodide dispersion;

[0044] The dispersion liquid was added to the lining of the reaction kettle, and reacted at 140° C. for 200 minutes to obtain a mixture; and the mixture was centrifuged to obtain the silver nanowires.

[0045] Figure 4 It is the transmission electron micrograph of the silver nanowire prepared in embodiment 3, by Figure 4 It can be seen that the surface of the silver wire is clean without residue, and there are a few granular silver. After inspection, the obtained silver nanowires have a diameter of 45-55 nm and a length of 15-25 μm.

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Abstract

The invention discloses a preparation method of silver nanowires. The invention specifically discloses a preparation method of silver nanowires. The preparation method comprises the following steps that 1) a silver halide solid is added into a reducing agent solution and uniformly dispersed to obtain a silver halide dispersion liquid; 2) the silver halide dispersion liquid is added into a reactionkettle liner, and reaction is carried out for 40 min to 360 min at 60 DEG C to 220 DEG C to obtain a mixture; and 3) the mixture is centrifugally separated to obtain the silver nanowire, wherein a polymer coating agent is not contained in the silver halide dispersion liquid. An additional silver nanowire growth control preparation is not introduced, the method is simple, green and environment-friendly, the cost is low, and the surface of the obtained silver nanowire is clean and free of residues.

Description

technical field [0001] The invention relates to the technical field of preparation of nanomaterials, in particular to a preparation method of silver nanowires. [0002] technical background [0003] One-dimensional metallic silver nanowires exhibit unique physical and chemical properties due to their special structure with a high aspect ratio, and are widely used in the fields of electrical conduction, heat conduction, sterilization, catalysis, and biological and chemical sensors. Based on its outstanding conductivity, light transmission and mechanical flexibility, silver nanowire transparent electrodes have broad market prospects in the application of flexible wearable electronic devices such as flexible touch screens, flexible displays, flexible solar cells and flexible OLEDs. [0004] At present, indium-doped tin oxide (ITO), the mainstream transparent electrode material, has defects such as brittle quality, complicated process, limited indium reserves, high energy consump...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B22F1/00B82Y30/00B82Y40/00
CPCB22F9/24B82Y30/00B82Y40/00B22F1/0547
Inventor 梁先文赵涛刘丹孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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