Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of sorting silicon single crystal substrate and silicon single crystal substrate

A single crystal silicon substrate, single crystal silicon ingot technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of shortened compound life, achieve the effect of reducing power loss and suppressing tailing current

Pending Publication Date: 2020-11-27
SHIN-ETSU HANDOTAI CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when a single crystal silicon substrate is irradiated with a particle beam, a defect forming an energy level serving as a recombination center occurs in the forbidden band, and the recombination life is shortened.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of sorting silicon single crystal substrate and silicon single crystal substrate
  • Method of sorting silicon single crystal substrate and silicon single crystal substrate
  • Method of sorting silicon single crystal substrate and silicon single crystal substrate

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0078] A plurality of single crystal silicon substrates cut out from a plurality of single crystal silicon ingots produced by the FZ method and the MCZ method, respectively, were prepared. The dopant types, dopant concentrations, oxygen concentrations, carbon concentrations, nitrogen concentrations, diameters, and crystal plane orientations of the plurality of single crystal silicon substrates are as follows.

[0079] Dopant type / concentration: phosphorus / 6.1×10 13 ~5.6×10 14 atoms / cm 3 ,

[0080] Oxygen concentration: less than 0.1ppma ~ 11.0ppma,

[0081] Carbon concentration: 0.01~0.07ppma,

[0082] Nitrogen concentration: 0~5.0×10 15 atoms / cm 3 ,

[0083] Diameter: 200mm, 150mm,

[0084] Crystal plane orientation: (100).

[0085] The oxygen concentration was measured by an infrared absorption method (conversion factor: JEIDA), and the carbon concentration and nitrogen concentration were measured by a secondary ion mass spectrometry (SIMS).

[0086] Next, oxide fi...

Embodiment

[0115] Hereinafter, although the Example and comparative example of this invention are shown and this invention is demonstrated more concretely, this invention is not limited to these examples.

[0116] (Example)

[0117] In the embodiment, for single crystal silicon substrates made of two kinds of single crystal silicon ingots (ingot 1 and crystal ingot 2), according to the sorting method of the present invention, the single crystal silicon substrates made of each single crystal silicon ingot are judged Qualified and sorted.

[0118] (Ingot 1)

[0119] First, by the FZ method, the growth phosphorus concentration was 7×10 13 atoms / cm 3 single crystal silicon ingot (Ingot 1). Its diameter is 200 mm and its crystal axis orientation is . The oxygen concentration is less than 0.1ppma, and the carbon concentration is 0.01ppma. The oxygen concentration was measured by an infrared absorption method (conversion factor: JEIDA), and the carbon concentration was measured by a secon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The present invention is a method of sorting silicon single crystal substrates which includes: a preparation step of preparing candidate silicon single crystal substrates by making the same from ingots; a particle beam irradiation step; a recovery heat treatment step; a measurement step of measuring an excess carrier decay curve; a determination step of calculating [delta]tTail(X)=tTail(X)-[-LT*ln(X / 100)] from a time LT until the excessive carrier concentration decays to 1 / e and a time tTail(X) until the excessive carrier concentration decays to X%(1<=X<=10), and determining as passing when [delta]tTail(X) is at or less than a predetermined determination value; and a sorting step of sorting a silicon single crystal substrate made from the ingot from which the silicon single crystal substrate determined as passing has been made. Thus, the method of sorting a silicon single crystal substrate which can prevent tail currents by controlling a recombination lifetime is provided.

Description

technical field [0001] The invention relates to a sorting method of a single crystal silicon substrate and the single crystal silicon substrate. Background technique [0002] In recent years, the improvement of energy efficiency and the reduction of greenhouse gas are strongly demanded, and the demand for inverters as semiconductor devices for electric power is expanding. In order to increase the efficiency and size of the inverter device, it is desired to increase the frequency of the semiconductor element, and therefore it is necessary to keep the power loss of the semiconductor element low. [0003] As the main semiconductor elements constituting the inverter, there are IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) and FWD (Free Wheeling Diode, freewheeling diode). [0004] In the IGBT, when switching from the on (ON) state to the off (OFF) state during the switching operation, a tail current that flows until the carriers accumulated in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66C30B29/06H01L21/322
CPCC30B29/06C30B33/04C30B33/02H01L22/12H01L22/20
Inventor 竹野博
Owner SHIN-ETSU HANDOTAI CO LTD