Semiconductor light-emitting unit and cascaded mid-infrared light-emitting diode

A technology of light-emitting diodes and light-emitting units, which is applied in the direction of semiconductor devices, electrical components, and electric solid-state devices, and can solve the problems of poor repeatability and uniformity in the growth process, affecting quantum efficiency and output power, and escaping carriers to be recombined. Achieve the effects of suppressing non-radiative recombination, improving quantum efficiency and output power, and increasing device voltage

Active Publication Date: 2021-12-24
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, this structure only uses the InAs / GaSb superlattice as the electron-hole recombination active region, and its carriers are not restricted by the barrier formed by the heterojunction, so it is easy to cause the carriers to be recombined to escape from the active region, affecting its quantum Efficiency and output power
The graded superlattice structure process in this structural connection layer is relatively complicated, and the repeatability and uniformity of the growth process are poor.

Method used

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  • Semiconductor light-emitting unit and cascaded mid-infrared light-emitting diode
  • Semiconductor light-emitting unit and cascaded mid-infrared light-emitting diode
  • Semiconductor light-emitting unit and cascaded mid-infrared light-emitting diode

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Embodiment 1

[0026] This embodiment provides a semiconductor light emitting unit 1, such as figure 2 As shown, the semiconductor light emitting unit 1 includes a hole barrier layer 11 , an active layer 12 and an electron barrier layer 13 which are sequentially stacked. Such as Figure 4 As shown, in order to respectively set heterojunction structures on both sides of the active layer 12, in this embodiment, the hole barrier layer 11 and the electron barrier layer 13 of the semiconductor light emitting unit 1 The effective bandwidth is respectively greater than the effective bandwidth of the active layer 12 .

[0027] Wherein, the conduction bands of the hole barrier layer 11 and the active layer 12 are flush with each other and the valence bands form a potential difference, thereby limiting the mobility of hole carriers; the electron barrier layer 13 The valence bands of the active layer 12 are flush with each other and the conduction band forms a potential difference, thereby limiting ...

Embodiment 2

[0031] This embodiment provides a cascaded mid-infrared light emitting diode, such as image 3 As shown, the cascaded mid-infrared light-emitting diode includes a substrate 3, and a plurality of stacked semiconductor light-emitting units 1 as described in Embodiment 1 are arranged on the first surface of the substrate 3, and each of the The electron barrier layer 13 of the semiconductor light emitting unit 1 faces the hole barrier layer 11 of the adjacent semiconductor light emitting unit 1, wherein a tunnel junction is provided between every two adjacent semiconductor light emitting units 1 2. A first electrode 4 is provided on the second surface of the substrate 3, and a second electrode 5 corresponding to the first electrode 4 is provided on the light emitting unit that is farthest from the substrate 3.

[0032] Wherein, the tunnel junction 2 includes a stacked P-type GaSb layer 21 and an N-type InAs layer 22 . The P-type GaSb layer 21 faces the electron barrier layer 13 ...

Embodiment 3

[0036] This embodiment discloses a method for manufacturing the cascaded mid-infrared light-emitting diode of Embodiment 2, the method comprising:

[0037] Step S1 , growing the semiconductor light emitting unit 1 and the tunnel junction 2 alternately on the first surface of the substrate 3 , and finishing the growth operation after setting the 15th semiconductor light emitting unit 1 . Specifically, the substrate 3 is preferably an N-type InAs substrate with a doping concentration of 1×10 19 cm -3. Metal-organic chemical vapor deposition (MOCVD) is used as the growth process, the growth source is TMIn, TMGa, TMSb, AsH3 and PH3, the N-type dopant source is SiH4, the P-type dopant source is DEZn, the growth temperature is 600°C, and the reaction chamber pressure It is 200Torr. After the impurities on the surface of the substrate 3 are removed by high temperature treatment, the following growths are performed in sequence:

[0038] The hole barrier layer 11 includes a 100nm t...

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Abstract

The invention discloses a semiconductor light-emitting unit and a cascaded mid-infrared light-emitting diode. The semiconductor light-emitting unit includes a hole barrier layer, an active layer and an electron barrier layer stacked in sequence, and a hole barrier layer and an electron barrier layer. The effective bandwidth of the barrier layer is larger than the effective bandwidth of the active layer, the conduction bands of the hole barrier layer and the active layer are equal to each other and the valence bands form a potential difference, and the valence bands of the electron barrier layer and the active layer are equal to each other. and the conduction band forms a potential difference. The cascaded mid-infrared light emitting diode includes the above-mentioned semiconductor light emitting unit. The invention solves the problem that the active region of the existing semiconductor light-emitting unit lacks heterojunction confinement, which affects its quantum efficiency and output power.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor light emitting unit and a cascaded mid-infrared light emitting diode. Background technique [0002] The 3-5μm mid-infrared light source is in the window band of the atmosphere, and has very important applications in many fields such as industrial gas detection, spectroscopy, dynamic infrared scene generation, medical treatment, environmental protection, free space optical communication, and military affairs. Light-emitting diodes are valued as mid-infrared light sources due to their fast switching speed, high output power, and relatively narrow emission spectrum. [0003] In recent years, in order to improve the performance of mid-infrared light-emitting diodes, many new structures have emerged. Among them, cascaded light-emitting diodes are more valued. The cascaded light-emitting diode splits the active area of ​​the traditional light-emitting diode fro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/04H01L33/06H01L33/14H01L33/30H01L25/075B82Y40/00
CPCH01L33/0012H01L33/04H01L33/06H01L33/0025H01L33/30H01L33/14H01L33/02H01L25/0756B82Y40/00
Inventor 朱赫赵宇吴启花黄勇
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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