Organic light-emitting device containing carbazole as core compound and application of organic light-emitting device
An electroluminescent device and luminescent technology, applied in the direction of electric solid-state devices, electrical components, luminescent materials, etc., can solve the problems of low light extraction efficiency, reduce the angle dependence of the device, etc., and achieve high light extraction efficiency and excellent viewing angle , the effect of angle-dependent inhibition
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[0067]Example 1: Synthesis of compound 8:
[0068]
[0069]In a nitrogen atmosphere, add 0.01 mol of raw material I-1, 0.025 mol of raw material II-1, 0.03 mol of sodium tert-butoxide, 5×10 to a 500ml three-necked flask-5mol Pd2(dba)3And 5×10-5mol tri-tert-butyl phosphorus, then add 150ml of toluene to dissolve it, heat to 100°C, reflux for 24 hours, observe the reaction by TLC until the reaction is complete. Naturally cool to room temperature, filter, and spin-evaporate the filtrate to no fraction. The resulting material was purified by a silica gel column (petroleum ether as the eluent) to obtain intermediate A-1.
[0070]In a 250ml three-necked flask, under the protection of nitrogen, add 0.01mol intermediate A-1, 0.015mol raw material III-1, 150ml toluene and stir and mix, and then add 5×10-5mol Pd2(dba)3, 5×10-5mol P(t-Bu)3, Heated to 110°C, refluxed for 24 hours, and observed the reaction by TLC until the reaction was complete. Naturally cooled to room temperature, filtered, the filtra...
Example Embodiment
[0126]Device Example 2
[0127]Transparent substrate layer 1 / anode layer 2 (ITO (15nm) / Ag (150nm) / ITO (15nm)) / hole injection layer 3 (HT-1: P-1 = 97: 3 mass ratio, thickness 10nm) / void Hole transport layer 4 (HT-1, thickness 130nm) / electron blocking layer 5 (EB-2, thickness 40nm) / light emitting layer 6 (GH-1:GH-2:GD-1=47:47:6 mass ratio, Thickness 40nm) / hole blocking / electron transport layer 7 (ET-1:Liq=1:1 mass ratio, thickness 35nm) / electron injection layer 8 (Yb, thickness 1nm) / cathode layer 9 (Mg:Ag=1: 9 mass ratio, thickness 15nm) / CPL layer 10 (compound 8 of the present invention, thickness 70nm).
Example Embodiment
[0128]Device Example 3
[0129]Transparent substrate layer 1 / anode layer 2 (ITO (15nm) / Ag (150nm) / ITO (15nm)) / hole injection layer 3 (HT-1: P-1 = 97: 3 mass ratio, thickness 10nm) / void Hole transport layer 4 (HT-1, thickness 130nm) / electron blocking layer 5 (EB-3, thickness 90nm) / light emitting layer 6 (RH-1:RD-1=97:3 mass ratio, thickness 40nm) / holes Barrier / electron transport layer 7 (ET-1:Liq=1:1 mass ratio, thickness 35nm) / electron injection layer 8 (Yb, thickness 1nm) / cathode layer 9 (Mg:Ag=1:9 mass ratio, thickness 15nm) ) / CPL layer 10 (compound 8 of the present invention, thickness 70nm).
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