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Method for preparing holographic recording layer of laser holographic photoetching material

A photolithographic material and holographic recording technology, applied in hologram recording material, holographic process, opto-mechanical equipment, etc., can solve problems such as difficulty in large-scale industrial application, high price of fluoropolymer, and limitation of industrial application, etc. Achieve the effect of easy industrial application, excellent hydrophobic performance and considerable market benefits

Pending Publication Date: 2021-02-02
SHENZHEN YUTO PACKAGING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-energy ray irradiation is to use ion beams, X-rays, ultraviolet rays or electron beams to modify fluoropolymers, introduce free radicals or active groups on the surface, and then graft other monomers on it to increase its compatibility with polymers. The compatibility of acrylate substrates, but the high-energy ray irradiation method requires high equipment and is expensive, and it is difficult for large-scale industrial applications, and the fluoropolymer itself is also expensive, which limits its industrial application

Method used

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  • Method for preparing holographic recording layer of laser holographic photoetching material
  • Method for preparing holographic recording layer of laser holographic photoetching material
  • Method for preparing holographic recording layer of laser holographic photoetching material

Examples

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Embodiment 1

[0046] Such as figure 1 with Figure 4 As shown, a method for preparing a holographic recording layer of a laser holographic lithography material comprises the following steps:

[0047] S1. Add organosilicon monomers that can undergo polymerization reactions and vinyl-containing organosilicon monomers into the reaction vessel, and stir evenly; by adding organosilicon monomers and vinyl-containing organosilicon monomers The container is stirred evenly to make it undergo copolymerization reaction to form the main chain for subsequent operation.

[0048] S2. Raise the temperature to the first reaction temperature, add a certain amount of concentrated sulfuric acid dropwise, then add the fluorine-containing organosilicon monomer that can undergo polymerization reaction, and carry out the constant temperature reaction for the first set time period at the first reaction temperature; The method introduces the fluorine-containing organosilicon monomer into the main chain, improves t...

Embodiment 2

[0070] Compared with Example 1, the only difference is that the organosilicon monomer is hexamethylcyclotrisiloxane or octaphenylcyclotetrasiloxane, and the vinyl-containing organosilicon monomer is methylvinyldiethyl Oxysilane, through the copolymerization of hexamethylcyclotrisiloxane or octaphenylcyclotetrasiloxane and methylvinyldiethoxysilane to obtain a polyacrylate main chain. The fluorine-containing organosilicon monomer is tetramethyltrifluoropropyl cyclotetrasiloxane. The cost of the production process is reduced by using lower-cost tetramethyltrifluoropropyl cyclotetrasiloxane instead of expensive fluororesin as the modified material.

Embodiment 3

[0072] Add a certain amount of octamethylcyclotetrasiloxane (D4) and 1,3-divinyl-1,1,3,3-tetramethyldisiloxane (DVMS) into the reaction system, stir evenly, and heat up to Reaction temperature 60 ℃, add dropwise a certain amount of concentrated sulfuric acid (0.6wt%) and then add methyltrifluoropropylcyclotrisiloxane (DF3), wherein, the molar ratio of D4, DF3 and DVMS is 2 / 1 / 1. React at constant temperature for 5 hours, take the container out to cool, and finally add anhydrous sodium carbonate to neutralize the concentrated sulfuric acid, and filter through filter paper to obtain vinyl-terminated fluorine-containing polysiloxane.

[0073] Prepare the water phase, add emulsifier (sodium lauryl sulfate), acryloxypropylene alkylphenol polyether sulfate ammonium (V-20S), fatty alcohol polyoxyethylene ether into N-methylolacrylamide and water Stir in a mixed solvent, wherein the amount of emulsifier is 6 wt%, and the ratio of sodium lauryl sulfate, fatty alcohol polyoxyethylene et...

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Abstract

The invention discloses a method for preparing a holographic recording layer of a laser holographic photoetching material. The method comprises the following steps of: adding an organic silicon monomer capable of generating polymerization reaction and an organic silicon monomer containing vinyl into a reaction container, and uniformly stirring; raising the temperature to a first reaction temperature, dropwise adding a certain amount of concentrated sulfuric acid, then adding a fluorine-containing organic silicon monomer capable of generating polymerization reaction, and carrying out constant-temperature reaction for a first set time period at the first reaction temperature; after the reaction is completed, taking out and cooling the reaction container; adding anhydrous sodium carbonate toneutralize concentrated sulfuric acid; and filtering the neutralized solution through filter paper to obtain the vinyl-terminated fluorine-containing polysiloxane. The organosilicon monomer and the vinyl-containing organosilicon monomer undergo a polymerization reaction to form a main chain, and the fluorine-containing organosilicon monomer is introduced into the main chain through a copolymerization method, so the surface energy of the composite film is reduced, the composite film has excellent hydrophobic performances, and the interaction force between the composite film and a metal nickel plate is weakened.

Description

technical field [0001] The invention relates to the field of holographic photolithographic materials, in particular to a method for preparing a holographic recording layer of a laser holographic photolithographic material. Background technique [0002] At present, the phenomenon of counterfeiting and shoddy goods has been dealt with repeatedly, and it is regarded as the second largest social "tumor" after the drug trade. It not only disrupts the economic order, but also violates the legitimate rights and interests of businesses and consumers. Existing anti-counterfeiting technologies are constantly being challenged, and breakthroughs in new technologies usher in rare opportunities. The development of social economy has put forward requirements for the development of science and technology, and anti-counterfeiting technology has also made great progress, such as laser holography, image code, magnetic code, radio frequency, ink, biological and other anti-counterfeiting technol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F283/12C08F220/58C08F220/18C08F220/14C09D151/08C08J7/04C08L67/02G03F7/00G03H1/02
CPCC08F283/124C09D151/08C08J7/0427G03H1/02G03F7/0005C08J2367/02C08J2451/08G03H2001/0264G03H2260/14C08F220/58C08F220/1804C08F220/14
Inventor 韩国程兰希钟伟俞朝晖沈祖广
Owner SHENZHEN YUTO PACKAGING TECH