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Composite material and its preparation method and quantum dot light-emitting diode

A technology of composite materials and quantum dots, which is applied in the field of quantum dot light-emitting diodes, composite materials and their preparation, can solve the problem of low carrier transport capacity, increase composite luminescence rate, improve dispersion, and increase output coupling Effect

Active Publication Date: 2022-02-11
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a composite material and its preparation method and quantum dot light-emitting diode, aiming to solve the technical problem of low carrier transport capacity of existing quantum dots

Method used

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  • Composite material and its preparation method and quantum dot light-emitting diode
  • Composite material and its preparation method and quantum dot light-emitting diode
  • Composite material and its preparation method and quantum dot light-emitting diode

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preparation example Construction

[0027] Correspondingly, on the other hand, the embodiment of the present invention also provides a method for preparing a composite material, such as image 3 Shown, this preparation method comprises the steps:

[0028]S01: Prepare quantum dot colloidal solution and silver EDTA solution;

[0029] S02: mixing the quantum dot colloidal solution with the silver EDTA solution, performing heat treatment, and then separating the solid and liquid to obtain the composite material.

[0030] In the preparation method of the composite material provided by the embodiment of the present invention, the composite material can be obtained by directly mixing the configured quantum dot colloid solution and the silver ethylenediamine tetraacetate solution, heating, and performing ligand exchange, which has the advantages of simple process and low cost. It is suitable for large-scale and large-scale preparation, and the final composite material can be used in the quantum dot light-emitting layer...

Embodiment 1

[0052] Taking the use of silver oxide, EDTA, CdS / ZnS, ODE, and n-hexane as examples, the preparation process of composite materials is introduced in detail.

[0053] 1) Put 1g of EDTA in a small beaker, first add 10ml of distilled water to form a solution with a total concentration of 1M, keep warm at 80°C, and slowly add an appropriate amount of silver oxide (molar ratio, EDTA:Ag + =1:1), reacted for 2h. The EDTA-Ag solution was prepared and dried in an oven.

[0054] 2) Add an appropriate amount of CdS / ZnS to 20ml ODE to form a quantum dot colloid solution with a total concentration of 20mg / mL.

[0055] 3) Dissolve an appropriate amount of EDTA-Ag into 5ml ODE, and then mix it with the quantum dot colloidal solution evenly (mass molar ratio, quantum dot: EDTA-Ag=1g:0.1mol), and continue to stir at 200°C for 0.5h. After the reaction, after the reaction solution was cooled to room temperature, it was precipitated and washed step by step with ethyl acetate + ethanol and aceto...

Embodiment 2

[0057] Taking the use of silver oxide, EDTA, CdSe / ZnS, ODE, and n-hexane as examples, the preparation process of composite materials is introduced in detail.

[0058] 1) Put 1g of EDTA in a small beaker, first add 10ml of distilled water to form a solution with a total concentration of 1M, keep warm at 80°C, and slowly add an appropriate amount of silver oxide (molar ratio, EDTA:Ag + =1.2:1), reacted for 2h. The EDTA-Ag solution was prepared and dried in an oven.

[0059] 2) Add an appropriate amount of CdSe / ZnS to 20ml ODE to form a quantum dot colloid solution with a total concentration of 30mg / mL.

[0060] 3) Dissolve an appropriate amount of EDTA-Ag into 5ml ODE, and then mix it with the quantum dot colloidal solution (mass molar ratio, quantum dot: EDTA-Ag=1g:0.05mol), and continue to stir at 200°C for 0.5h. After the reaction, after the reaction solution was cooled to room temperature, it was precipitated and washed step by step with ethyl acetate + ethanol and acetone...

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Abstract

The invention belongs to the technical field of nanometer materials, and in particular relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material includes quantum dots and silver ethylenediamine tetraacetate combined on the surface of the quantum dots; wherein, silver ions in the silver ethylenediamine tetraacetate combine with anions on the surface of the quantum dots. In the composite material, the surface plasmon resonance effect of silver on the surface of the quantum dot can induce local electromagnetic field enhancement, thereby increasing the light output coupling of the quantum dot and the recombination luminescence rate, and the composite material is used for the quantum dot luminescence of the quantum dot light-emitting diode layer, which can effectively improve the luminous efficiency of the device, thereby improving the performance of the device.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] LCD (Liquid Crystal Display, liquid crystal display) display technology requires a backlight source, which has many limitations such as high power consumption, complex structure and process, and high cost. When quantum dots replace traditional phosphors, the color gamut of the display can be greatly improved. The application of quantum dots in the backlight module shows that the display color gamut can be increased from 72% NTSC to 110% NTSC. However, when quantum dots get rid of the backlight technology and use active matrix quantum dot light-emitting diode display devices, compared with traditional backlight LCDs, self-illuminating QLEDs (Quantum Dot Light Emitting Diode, quantum dot light-emitting diodes) have better performance in b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/56C09K11/88H01L51/50H01L51/54
CPCC09K11/025C09K11/883C09K11/565H10K50/115
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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