Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sapphire substrate thinning abrasive wheel and preparation method thereof

A sapphire substrate and grinding wheel technology, which is applied in the manufacture of tools, metal processing equipment, grinding/polishing equipment, etc., can solve the problems of short service life and poor impact resistance of metal bonded sapphire substrate thinning grinding wheels, etc. Achieve the effect of long service life, good self-sharpening and high processing efficiency

Inactive Publication Date: 2021-02-19
云南光电辅料有限公司
View PDF16 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention aims at the problems of short service life of the existing resin bonded sapphire substrate thinning grinding wheel and poor impact resistance of the metal bonded sapphire substrate thinning grinding wheel, and provides a self-sharpening, long service life, good toughness, Shock Resistant Sapphire Substrate Thinning Wheels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The steps of this embodiment are as follows: (1) 325 / 400 diamond powder is heated to 560°C, kept for 2 hours, and the diamond powder is rapidly cooled, cleaned, and dried by water cooling at a cooling rate faster than 500°C / 30 seconds , obtain the diamond powder of rapid cooling treatment; (2) mix 76 parts of 500 mesh copper-tin 20 alloy powders, 6 parts of 400 mesh copper powders, and 7 parts of 800 mesh zinc powders in the ratio of parts by weight to obtain a metal bond; (3) 5 parts of 325 / 400 diamond powder, 85 parts of metal bond, 8 parts of GT40 low-melting glass powder, 4 parts of 500-1000 mesh silicon carbide, 500-1000 mesh carbon dioxide Mix 3 parts of silicon hollow spheres, 0.5 parts of glycerin and 0.2 parts of zinc stearate to obtain a molding material; (4) put the molding material into a mold, heat up to 600°C for 15 minutes under the protection of hydrogen, and press 30MPa pressure , heat preservation and sintering for 5 minutes; after 15 minutes, the temp...

Embodiment 2

[0023] The steps of this embodiment are as follows: (1) 5 parts of 200 / 230 diamond powder, 75 parts of 600 mesh copper-tin alloy powder, 6 parts of 600 mesh copper powder, 5 parts of 800 mesh zinc powder, FD61 low melting point 10 parts of glass powder, 8 parts of aluminum oxide of 600 mesh, 0.4 part of liquid paraffin and 0.2 part of polyethylene wax, mix uniformly to obtain a molding material; (2) put the molding material into a mold, vacuumize, and heat up to 650°C, under 28MPa pressure, heat preservation and sintering for 8 minutes; cool down to 320°C after 20 minutes, demould to get the semi-finished cutter head; (3) Remove the flash and burrs from the semi-finished cutter head to get the finished cutter head; (4) The finished cutter head is bonded to the substrate at equal intervals along the circumferential direction of the substrate to form a grinding wheel for thinning the sapphire substrate.

Embodiment 3

[0025] The steps of this embodiment are as follows: (2) Mix 80 parts of 400 mesh copper-tin 20 alloy powder, 8 parts of 600 mesh copper powder, and 5 parts of 800 mesh zinc powder according to the ratio of parts by weight to obtain a metal bond; (3) According to the ratio of parts by weight, 9 parts of 70 / 80 diamond powder, 90 parts of metal bond, 8 parts of GT55 low-melting glass powder, 6 parts of 600 mesh silicon carbide, 0.2 part of glycerin, 0.2 part of liquid paraffin, and 0.1 part of zinc stearate , 0.1 part of polyethylene wax, mixed evenly to obtain molding material; (4) Put the molding material into the mold, evacuate, heat up to 580°C in 15 minutes, keep warm and sinter for 4 minutes under 30MPa pressure, and continue to heat up to 750°C , under the pressure of 25MPa, heat preservation and sintering for 3 minutes, cool down to 350°C in 25 minutes, and demould to obtain the semi-finished knife head; (5) remove the flash and burr from the semi-finished knife head to ob...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle size (mesh)aaaaaaaaaa
particle diameteraaaaaaaaaa
particle size (mesh)aaaaaaaaaa
Login to View More

Abstract

The invention discloses a sapphire substrate thinning abrasive wheel. The sapphire substrate thinning abrasive wheel consists of a basal body and cutter heads, wherein the cutter heads are adhered above the basal body at intervals in the circumferential direction of the basal body; and each of the cutter heads comprises 4 parts to 10 parts of diamond powder, 80 parts to 95 parts of a metal bindingagent, 5 parts to 15 parts of low-melting-point glass powder, 5 parts to 10 parts of a filling agent, 0.1 part to 0.2 part of a demoulding agent and 0.2 part to 0.5 part of a wetting agent, and the cutter heads are formed through mixing of materials, compression, sintering and shaping. The sapphire substrate thinning abrasive wheel disclosed by the invention is high in self-sharpening property, long in service life, high in toughness, and high in impact resistance.

Description

technical field [0001] The invention relates to the technical field of crystal material processing, in particular to a sapphire substrate thinning grinding wheel and a preparation method thereof. Background technique [0002] Sapphire crystal, as a crystal material integrating excellent optical properties, physical properties, mechanical properties and chemical properties, is widely used in LED lighting substrate materials, missile seeker domes, high-energy detection and high-power laser windows. [0003] In the process of manufacturing sapphire LED substrates, sapphire needs to be sliced, chamfered, thinned (from 0.8~1.7mm to 0.3~0.65 mm), and ground, and the processing accuracy and difficulty gradually increase in the later stages of the process. The thinning process plays a key role in the quality of the sapphire substrate. Since the Mohs hardness of sapphire crystal reaches 9, second only to diamond, thinning and surface flattening are very difficult. When processing sa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24D3/10B24D3/34B24D18/00
CPCB24D3/10B24D3/342B24D3/346B24D18/0009B24D18/0072
Inventor 杨俊宏桂清华句红兵谭立马杰
Owner 云南光电辅料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com