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Pyramid rapid texturing solution and texturing method and silicon wafer product thereof

A pyramid and texturing liquid technology, applied in the field of solar cells, can solve the problems of affecting the efficiency of the cells, requiring high temperature, loss of optical properties, etc., and achieves the effect of uniform structure distribution, uniformity, and controllable morphology

Active Publication Date: 2021-03-05
SONGSHAN LAKE MATERIALS LAB +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional alkali-texturing process requires high temperature (75°C-85°C), long-time (20min-30min) and rough throwing with greater weight loss. The polishing process still requires high temperature, and the reaction time is still maintained at about 10 minutes
[0003] In addition, the top of the pyramid structure obtained by the existing alkali texturing process is relatively sharp, which is not conducive to the passivation of subsequent battery processes, especially for high-efficiency battery technologies such as PERC, HIT, and IBC, which have very strict requirements for passivation. To improve the passivation process of the pyramid, it is necessary to introduce an additional chemical treatment process "rounding", which will also lose its optical properties and increase reflectivity at the same time
Moreover, the size of the pyramid structure obtained by the existing alkali texturing process is relatively large, generally 1 μm to 10 μm, and the size distribution is very uneven. , back throwing and electrode contact are very unfavorable, seriously affecting the improvement of battery efficiency

Method used

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  • Pyramid rapid texturing solution and texturing method and silicon wafer product thereof
  • Pyramid rapid texturing solution and texturing method and silicon wafer product thereof
  • Pyramid rapid texturing solution and texturing method and silicon wafer product thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] 1) Silicon wafer pre-cleaning

[0053] Soak the silicon chip in a mixed solution of lye and hydrogen peroxide at a temperature of 45-60°C for 120s, and then wash it with water for 120s; put the washed silicon chip in a dilute acid solution and soak it for 120s at room temperature ; Then wash with water, the washing time is 180s.

[0054] 2) Texturing

[0055] Put the pre-cleaned and water-washed silicon wafers in step 1) into the pyramid rapid texturing solution, the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein, the concentration of silver nitrate is 0.01mmol / L, the concentration of copper nitrate is 100mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; The concentration of hydrogen peroxide is 3.6mol / L; Reaction temperature is 30 ℃, reaction time is 240s.

[0056] 3) After cleaning

[0057] Take out the textured silicon wafer in step 2), place it in nitric ...

Embodiment 2

[0059] 1) Silicon wafer pre-cleaning

[0060] The silicon wafer pre-cleaning step in this embodiment is basically the same as the step 1) silicon wafer pre-cleaning step in Embodiment 1, and will not be repeated here.

[0061] 2) Texturing

[0062] Put the pre-cleaned and water-washed silicon wafers in step 1) into the pyramid rapid texturing solution, the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein, the concentration of silver nitrate is 0.001mmol / L, the concentration of copper nitrate is 100mmol / L, the concentration of hydrofluoric acid is 7.0mol / L; the concentration of hydrogen peroxide is 1.3mol / L; the reaction temperature is 30 ℃, and the reaction time is 240s.

[0063] 3) After cleaning

[0064] The post-cleaning step of the silicon wafer in this embodiment is basically the same as the post-cleaning step in step 3) in Embodiment 1, and will not be repeated here.

[0...

Embodiment 3

[0067] 1) Silicon wafer pre-cleaning

[0068] The silicon wafer pre-cleaning step in this embodiment is basically the same as the step 1) silicon wafer pre-cleaning step in Embodiment 1, and will not be repeated here.

[0069] 2) Texturing

[0070] Put the pre-cleaned and water-washed silicon wafers in step 1) into the pyramid rapid texturing solution, the pyramid rapid texturing solution is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Wherein, the concentration of silver nitrate is 0.1mmol / L, the concentration of copper nitrate is 150mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; The concentration of hydrogen peroxide is 5.0mol / L; Reaction temperature is 30 ℃, reaction time is 240s.

[0071] 3) After cleaning

[0072] The post-cleaning step of the silicon wafer in this embodiment is basically the same as the post-cleaning step in step 3) in Embodiment 1, and will not be repeated here.

[0073] Compared ...

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Abstract

The invention discloses a pyramid rapid texturing solution and a texturing method and silicon wafer product thereof. The pyramid rapid texturing solution comprises the following main components: a silver ion source, a copper ion source, a fluorine ion source, an oxidant and deionized water. The pyramid rapid texturing solution can be used for rapidly texturing the surface of a silicon wafer at room temperature, an independent, complete, uniform and tightly arranged positive pyramid textured structure can be formed on the surface of the silicon wafer within an extremely short time, the size ofthe structure is 0.5-2 microns, and the surface reflectivity is 8-20%. Compared with existing line production pyramid structures, the pyramid rapid texturing solution has the advantages that: the tower tip is smooth and more uniform in distribution, is very beneficial to back polishing and passivation, and is particularly suitable for existing PERC, HIT, IBC and other efficient battery structures.The pyramid texturing method provided by the invention has the advantages that: the overall reaction time is controlled within 5 minutes, the time cost and the equipment cost can be greatly reduced,and the wide popularization and application are facilitated.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a rapid pyramid texturing liquid, a texturing method thereof and a silicon chip product. Background technique [0002] Texturing, as a key process in the process of crystalline silicon cells, plays an important role in improving efficiency. For monocrystalline silicon, the commonly used texturing process is alkali texturing, which forms a pyramid structure on the surface of the silicon wafer through anisotropic etching of alkali. In the alkali texturing process, it is usually necessary to add some additives, such as IPA, etc. to effectively control the reaction. However, with the development of crystalline silicon battery technology, cost reduction and efficiency increase have increasingly become the focus of attention. The traditional alkali-texturing process requires high temperature (75°C-85°C), long-time (20min-30min) and rough throwing with greater weight l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06C23F1/24H01L31/0236H01L31/18
CPCC30B33/10C30B29/06H01L31/1804H01L31/02363Y02P70/50
Inventor 吴俊桃刘尧平陈伟赵燕陈全胜唐旱波王燕杜小龙
Owner SONGSHAN LAKE MATERIALS LAB
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