Pyramid rapid texturing liquid and its texturing method and silicon wafer product

A pyramid and texturing liquid technology, applied in the field of solar cells, can solve the problems of affecting cell efficiency, requiring high temperature, loss of optical properties, etc., and achieves the effects of uniform structure distribution, uniformity guarantee, and shape controllable

Active Publication Date: 2022-07-15
SONGSHAN LAKE MATERIALS LAB +1
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional alkali-texturing process requires high temperature (75°C-85°C), long-time (20min-30min) and rough throwing with greater weight loss. The polishing process still requires high temperature, and the reaction time is still maintained at about 10 minutes
[0003] In addition, the top of the pyramid structure obtained by the existing alkali texturing process is relatively sharp, which is not conducive to the passivation of subsequent battery processes, especially for high-efficiency battery technologies such as PERC, HIT, and IBC, which have very strict requirements for passivation. To improve the passivation process of the pyramid, it is necessary to introduce an additional chemical treatment process "rounding", which will also lose its optical properties and increase reflectivity at the same time
Moreover, the size of the pyramid structure obtained by the existing alkali texturing process is relatively large, generally 1 μm to 10 μm, and the size distribution is very uneven. , back throwing and electrode contact are very unfavorable, seriously affecting the improvement of battery efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pyramid rapid texturing liquid and its texturing method and silicon wafer product
  • Pyramid rapid texturing liquid and its texturing method and silicon wafer product
  • Pyramid rapid texturing liquid and its texturing method and silicon wafer product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] 1) Wafer pre-cleaning

[0053] Soak the silicon wafer in a mixed solution of alkali solution and hydrogen peroxide at a temperature of 45-60°C for 120s, and then wash it with water for 120s; put the washed silicon wafer in a dilute acid solution and soak it at room temperature for 120s ; Then wash with water for 180s.

[0054] 2) Texturing

[0055] The pre-cleaned and water-washed silicon wafers in step 1) are placed in a pyramid quick texturing solution, which is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Among them, the concentration of silver nitrate is 0.01mmol / L, the concentration of copper nitrate is 100mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; the concentration of hydrogen peroxide is 3.6mol / L; the reaction temperature is 30 ℃, and the reaction time is 240s.

[0056] 3) Post cleaning

[0057] The textured silicon wafer in step 2) was taken out, placed in nitric acid with a concentrat...

Embodiment 2

[0059] 1) Wafer pre-cleaning

[0060] The silicon wafer pre-cleaning step in this embodiment is basically the same as the step 1) silicon wafer pre-cleaning step in Embodiment 1, and details are not described here.

[0061] 2) Texturing

[0062] The pre-cleaned and water-washed silicon wafers in step 1) are placed in a pyramid quick texturing solution, which is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Among them, the concentration of silver nitrate is 0.001mmol / L, the concentration of copper nitrate is 100mmol / L, the concentration of hydrofluoric acid is 7.0mol / L; the concentration of hydrogen peroxide is 1.3mol / L; the reaction temperature is 30 ℃, and the reaction time is 240s.

[0063] 3) Post cleaning

[0064] The post-cleaning step of the silicon wafer in this embodiment is basically the same as the post-cleaning step of step 3) in Embodiment 1, and will not be repeated here.

[0065] Compared with Example 1,...

Embodiment 3

[0067] 1) Wafer pre-cleaning

[0068] The silicon wafer pre-cleaning step in this embodiment is basically the same as the step 1) silicon wafer pre-cleaning step in Embodiment 1, and details are not described here.

[0069] 2) Texturing

[0070] The pre-cleaned and water-washed silicon wafers in step 1) are placed in a pyramid quick texturing solution, which is composed of silver nitrate, copper nitrate, hydrofluoric acid, hydrogen peroxide and deionized water. Among them, the concentration of silver nitrate is 0.1mmol / L, the concentration of copper nitrate is 150mmol / L, the concentration of hydrofluoric acid is 4.8mol / L; the concentration of hydrogen peroxide is 5.0mol / L; the reaction temperature is 30 ℃, and the reaction time is 240s.

[0071] 3) Post cleaning

[0072] The post-cleaning step of the silicon wafer in this embodiment is basically the same as the post-cleaning step of step 3) in Embodiment 1, and will not be repeated here.

[0073] Compared with Example 1, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
sizeaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a pyramid rapid texturing liquid, a texturing method and a silicon wafer product. The main components of the pyramid rapid texturing liquid include a silver ion source, a copper ion source, a fluoride ion source, an oxidant and deionized water. Using the above-mentioned pyramid rapid texturing liquid, the surface of the silicon wafer can be quickly textured at room temperature, and an independent, complete, uniform and closely arranged positive pyramid textured structure can be formed on the surface of the silicon wafer in a very short time. It is 0.5μm to 2μm, and its surface reflectivity is between 8% and 20%. Compared with the pyramid structure of the existing production line, the size is small, the spire is smooth, and the distribution is more uniform, which is very conducive to back throwing and passivation, especially It is suitable for existing high-efficiency battery structures such as PERC, HIT, and IBC. The overall reaction time of the pyramid texturing method provided by the invention is controlled within 5 minutes, which can greatly reduce the time cost and equipment cost, and is favorable for wide popularization and application.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a pyramid rapid texturing liquid, a texturing method and a silicon wafer product. Background technique [0002] Texturing, as a key process in the crystalline silicon cell process, plays an important role in improving efficiency. For single crystal silicon, the commonly used texturing process is alkali texturing, which forms a pyramid structure on the surface of the silicon wafer by anisotropic etching of alkali. In the alkaline texturing process, it is usually necessary to add some additives, such as IPA, to effectively control the reaction. However, with the development of crystalline silicon cell technology, cost reduction and efficiency increase have become the focus of attention. The traditional alkali texturing process requires high temperature (75℃~85℃), long time (20min~30min) and rough throwing with great weight reduction. The throwing process still re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06C23F1/24H01L31/0236H01L31/18
CPCC30B33/10C30B29/06H01L31/1804H01L31/02363Y02P70/50
Inventor 吴俊桃刘尧平陈伟赵燕陈全胜唐旱波王燕杜小龙
Owner SONGSHAN LAKE MATERIALS LAB
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap