Check patentability & draft patents in minutes with Patsnap Eureka AI!

Quantum dot composite material and preparation method, light-emitting film and display device

A technology of composite materials and quantum dots, which is applied in the field of light-emitting thin films and display devices, quantum dot composite materials and their preparation, can solve the problems that the light-emitting performance is easily affected by environmental changes, and the quantum dots are easy to agglomerate, so as to ensure the light stability and luminous performance, good photostability and luminous performance, and the effect of improving luminous performance

Active Publication Date: 2022-04-12
TCL CORPORATION
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a method for preparing a quantum dot composite material, aiming at solving the problem that the existing quantum dots are prone to agglomeration and their luminous properties are easily affected by environmental changes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot composite material and preparation method, light-emitting film and display device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0020] A kind of preparation method of quantum dot composite material, please refer to figure 1 ,include:

[0021] S01. Obtain a mixed solution containing a metal organic framework material, a sensitizer, and a quantum dot, wherein the metal organic framework material has a porous structure and an unsaturated metal site, and the sensitizer is at least partially combined with the unsaturated Saturated metal site coordination connection;

[0022] S02. Heating the mixed solution, so that the quantum dots are at least partially loaded in the porous structure.

[0023] In the preparation method of the quantum dot composite material provided in the embodiment of the present invention, the metal organic framework material, the sensitizer and the quantum dot liquid phase system are mixed and heated, so that the sensitizer and the quantum dot are supported on the metal organic framework material, On the one hand, loading quantum dots in the porous structure of metal organic framework...

Embodiment approach

[0027] As an embodiment, the quantum dots include quantum dots of group II-VI compounds, quantum dots of group III-V compounds or quantum dots of group IV-VI compounds. Further, the quantum dots include: binary phase, ternary phase and quaternary phase quantum dots. Wherein, the binary phase quantum dots include but not limited to CdSe, ZnSe, PbSe, CdTe, ZnO, InP, GaN, GaP, AlP, InN, ZnTe, InAs, GaAs, CaF 2 etc., the ternary phase quantum dots include but not limited to Cd 1-x Zn x S / ZnS, Cd 1-x Zn x Se / ZnSe, CdSe 1-x S x / CdSe y S 1-y / CdS, Cd 1-x Zn x S, Cd 1-x Zn x Se, CdSeyS 1-y , PbSe y S 1-y , CdSe / Cd 1-x Zn x Se / CdyZn 1-y Se / ZnSe, Zn x Cd 1-X Te, Cd1-x Zn x Se / CdyZn 1-y Se / ZnSe, CdS / Cd 1-x Zn x S / Cd y Zn 1-y S / ZnS, NaYF 4 , CdS / ZnS, NaCdF 4 etc., the quaternary phase quantum dots include but not limited to Cd 1-x wxya 1-y , CdSe / ZnS, Cd 1- x Zn x Se / ZnS, CdSe / CdS / ZnS, CdSe / ZnSe / ZnS, etc. Furthermore, the particle size of the quantum dots...

Embodiment 1

[0059] This embodiment provides a quantum dot composite material, which specifically includes the following steps:

[0060] 2mmol Zn 4 O(CO 2 ) 6 and 0.5 mmol of isophthalic acid were dissolved in 15 mL of N,N-dimethylformamide, 7 mmol of ruthenium terpyridine was added, and after ultrasonic dissolution, the mixed solution was transferred to a 50 mL polytetrafluoroethylene stainless steel autoclave. Heat to 120°C in a programmed oven for 10 hours, then cool down to room temperature naturally. After the reaction is finished, filter to obtain MOF-5 compounded with ruthenium terpyridine;

[0061] Disperse 1mL of 3-(2-aminoethylamino)propyltrimethoxysilane, 1mg of MOF-5 complexed with ruthenium terpyridine and 6mg of CdSe in ethanol, stir and mix at 45°C for 2h, after standing still, wash and dry Dry to obtain CdSe@terpyridylruthenium / MOF-5.

[0062] The quantum efficiency of the quantum dot composite material prepared in this embodiment is 80%, and the quantum dot efficiency...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
quantum efficiencyaaaaaaaaaa
quantum efficiencyaaaaaaaaaa
quantum efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of display technology, and in particular relates to a quantum dot composite material and a preparation method thereof, a luminescent film and a display device. The preparation method of the quantum dot composite material provided by the present invention includes: obtaining a mixed solution containing a metal organic framework material, a sensitizer and a quantum dot, wherein the metal organic framework material has a porous structure and an unsaturated metal site, and the sensitized The agent is at least partially coordinated with the unsaturated metal site; the mixed solution is heated, so that the quantum dots are at least partially loaded in the porous structure. The quantum dot composite material prepared by the method has good dispersion performance, good light stability, luminous performance and quantum efficiency. It solves the problems that the existing quantum dots are prone to agglomeration and their luminous performance is easily affected by environmental changes.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot composite material and a preparation method thereof, a luminescent film and a display device. Background technique [0002] As a new type of nanomaterial, semiconductor quantum dots have been paid more and more attention with the deepening research on their synthesis and performance in recent years. Quantum dots have very promising application prospects due to their unique properties. It has been found that quantum dots also have great potential in optoelectronic devices, in display and lighting, especially for white light-emitting diodes, which are currently called "fourth generation lighting sources" Luminescent material. [0003] However, quantum dots are prone to agglomeration during the application process as luminescent materials, resulting in significant decay of fluorescence properties. In order to solve this technical problem, some organic l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00H01L51/50
CPCC09K11/883C09K11/881C09K11/02B82Y20/00B82Y30/00H10K50/11
Inventor 叶炜浩
Owner TCL CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com