Artificial nerve synapse device and preparation method thereof
A technology of neural synapses and devices, which is applied in the field of neurosynaptic devices and its preparation, can solve the problems of low energy consumption, poor plasticity, and non-adjustable resistance value, and achieve the effects of preventing leakage current, tight combination, and improved combination
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[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.
[0027] see figure 1 and figure 2 , the present invention provides a neurosynaptic device, which includes a substrate 100 , a bottom electrode layer 200 , a dielectric layer 300 and a top electrode layer 400 . The layers are preferably planar thin film structures.
[0028] The substrate 100 sequentially includes a silicon thin film layer 110 , a silicon dioxide thin film layer 120 and a titan...
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