Unlock instant, AI-driven research and patent intelligence for your innovation.

Artificial nerve synapse device and preparation method thereof

A technology of neural synapses and devices, which is applied in the field of neurosynaptic devices and its preparation, can solve the problems of low energy consumption, poor plasticity, and non-adjustable resistance value, and achieve the effects of preventing leakage current, tight combination, and improved combination

Pending Publication Date: 2021-03-26
HUAZHONG UNIV OF SCI & TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent CN108110137A discloses a SiOxNy-based light-reading neural protrusion device and its preparation method. The patent application document uniquely uses light intensity and phase to represent synaptic weights; Chinese patent CN109037442A discloses a SPR neurosynaptic device with resistance effect and its preparation method. This patent application invents a neurosynaptic device with electrical modulation and optical reading, which has the advantages of low energy consumption; although it can simulate synapses to a certain extent, its resistance changes The value cannot be adjusted, the plasticity is poor, and it cannot be used in artificial neural networks; in addition, most of the preparation methods of the above devices use methods such as sputtering and deposition to form each thin film layer, which cannot meet the needs of customized preparation of complex structures.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Artificial nerve synapse device and preparation method thereof
  • Artificial nerve synapse device and preparation method thereof
  • Artificial nerve synapse device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0027] see figure 1 and figure 2 , the present invention provides a neurosynaptic device, which includes a substrate 100 , a bottom electrode layer 200 , a dielectric layer 300 and a top electrode layer 400 . The layers are preferably planar thin film structures.

[0028] The substrate 100 sequentially includes a silicon thin film layer 110 , a silicon dioxide thin film layer 120 and a titan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the related technical field of intelligent devices, and discloses an artificial neural synapse device and a preparation method thereof. The device comprises a substrate; a bottom electrode layer arranged on the substrate; a dielectric layer arranged on the bottom electrode layer, wherein the dielectric layer comprises a first resistive oxidation layer and a second resistive oxidation layer, the first resistive oxidation layer is an undoped oxide, and the second resistive oxidation layer is an oxide doped with oxygen vacancies; and a top electrode layer arranged on thedielectric layer. The charges of the device can pass through a dielectric layer material under the stimulation of external excitation, the oxygen vacancies in the dielectric layer migrate and recover,opening and closing are achieved, the structure is simple, in addition, the device is prepared through the 4D printing technology, and a microstructure unit can be prepared, so that the artificial nerve synapse device has more excellent resistance change sensitivity and interlayer bonding performance.

Description

technical field [0001] The invention belongs to the technical field related to smart devices, and more specifically relates to a neurosynaptic device and a preparation method thereof. Background technique [0002] With the development of society and people's increasing demand for intelligent robots, modern science and technology pose new challenges to robotics. In the future, robots will abandon the stereotyped image of "reinforced and iron-framed" industrialization, and move toward the true meaning of "flesh and blood" that is light and agile. The development of humanoid "engineering life forms" on the Internet. The sensor system is a key part of it. It is the source of information for the robot, and the nervous system, as a system that gathers all sensor information, performs information perception, transmission and processing. Neuromorphic devices can convert sensor digital signals into analog Neural simulation signals can provide core components for building future huma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G06N3/063
CPCG06N3/063H10N70/20H10N70/883H10N70/021H10N70/011
Inventor 文世峰蒋承剑周燕陈道兵史玉升耿鹏陈柯宇刘洋
Owner HUAZHONG UNIV OF SCI & TECH