Vertical monomolecular film field effect transistor based on two-dimensional laminated heterostructure and preparation method of vertical monomolecular film field effect transistor

Abstract

The invention discloses a vertical monomolecular film field effect transistor based on a two-dimensional laminated heterostructure and a preparation method of the vertical monomolecular film field effect transistor, and belongs to the field of new materials and molecular field effect transistors. The vertical monomolecular film field effect transistor is composed of the two-dimensional material template layer, the ultra-flat metal electrode, a two-dimensional material insulating support layer, a self-assembled monomolecular film, a two-dimensional material drain terminal electrode, an insulating two-dimensional material dielectric layer and a conductive two-dimensional material gate electrode layer. According to the invention, a novel two-dimensional material is adopted to replace the gridand dielectric layer materials in a traditional field effect transistor, a two-dimensional material insulating layer is introduced to accurately control the atomic-scale thickness of the electrode spacing, and the two-dimensional material thin layer is introduced to improve the flatness of the metal electrode, so that the device achieves the atomic-scale flatness and controllable atomic layer thickness; the vertical molecular field effect transistor which has room temperature stability, is regulated and controlled by the solid-state grid and is provided with the ultra-flat metal electrode isrealized, and the stability of the device and the possibility of large-scale integration are greatly improved.

Description

technical field [0001] The invention belongs to the field of new materials and molecular field effect transistors, in particular to a vertical monomolecular film field effect transistor using two-dimensional materials as ultra-flat metal electrode growth templates, insulating support layers, gate electrode layers, dielectric layers, and drain terminal electrodes. . Background technique [0002] Transistors are the core of electronic circuits in the traditional semiconductor industry. Since the first model of transistors was proposed in 1947, researchers have developed various forms of transistors. The basic principle is: by applying an appropriate voltage to the gate A gate electric field is generated in the dielectric layer to adjust the carrier concentration at the interface between the insulating layer and the semiconductor layer, so that the current between the source and drain electrodes can be adjusted. Therefore, on the one hand, the logic function of the switch can ...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a vertical monomolecular film field effect transistor based on a two-dimensional stacked heterostructure and its preparation method, which not only solves the problems of poor stability at room temperature and low gate regulation efficiency of the existing solutions, but also improves the two-dimensional The inherent properties of the material, such as the advantages of atomic-level flatness and atomic-layer controllability, are introduced into vertical molecular field-effect transistors

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