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Low-dielectric-constant polyimide film and application thereof

A technology of polyimide film and low dielectric constant, which is applied in the direction of circuits, electrical components, electric solid devices, etc., and can solve problems such as poor sealing, uneven distribution of holes, and stress concentration

Active Publication Date: 2021-04-13
浙江中科玖源新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the pores prepared by this method are usually unevenly distributed, poorly sealed, and prone to stress concentration and collapse.

Method used

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  • Low-dielectric-constant polyimide film and application thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0028] A kind of polyimide film of low dielectric constant, it is to prepare by following method:

[0029] (1) Dissolve 0.5g of chitosan in a mixed solution consisting of 50mL of ethanol and 50mL of acetic acid aqueous solution (0.6mol / L), stir at 30°C for 30min, then add 10mL of tetraethyl orthosilicate dropwise at 30°C Stir at low temperature for 2 hours, then transfer to a reaction kettle for hydrothermal reaction at 80°C for 12 hours to obtain a gel, dry the gel and put it in a muffle furnace for calcination at 600°C for 2 hours, and after cooling with the furnace, obtain SiO 2 hollow microspheres;

[0030] (2), 0.5gSiO 2 Hollow microspheres and 0.05g of 3-aminopropyltrimethoxysilane were added to 40mL of N,N-dimethylacetamide, and after ultrasonic (power 200W) stirring for 3h, under nitrogen atmosphere, 15mmol of 4,4'- Diaminodiphenyl ether, stirred until completely dissolved, then added 15mmol of pyromellitic dianhydride and 10mL of N,N-dimethylacetamide, continued to ...

Embodiment 2

[0033] A kind of polyimide film of low dielectric constant, it is to prepare by following method:

[0034] (1) Dissolve 1g of chitosan in 10mL of deionized water, add 2g of 2,3-epoxypropyltrimethylammonium chloride at 80°C and stir for 10h, then add the reaction solution into 30mL of acetone and cool to overnight at 0°C, remove the solvent by filtration to obtain a precipitate, wash with acetone and dry to obtain chitosan quaternary ammonium salt;

[0035] Dissolve 0.5g of chitosan quaternary ammonium salt in a mixed solution consisting of 50mL of ethanol and 50mL of acetic acid aqueous solution (0.6mol / L), stir at 30°C for 30min, then add 10mL of tetraethyl orthosilicate dropwise, at 30°C Stir for 2 hours, then transfer to a reaction kettle for hydrothermal reaction at 80°C for 12 hours to obtain a gel, dry the gel and put it into a muffle furnace for calcination at 600°C for 2 hours, and after cooling with the furnace, obtain SiO 2 hollow microspheres;

[0036] (2), 0.5gSiO ...

Embodiment 3

[0039] A kind of polyimide film of low dielectric constant, it is to prepare by following method:

[0040] (1) Dissolve 0.5g of chitosan in a mixed solution consisting of 50mL of ethanol and 50mL of acetic acid aqueous solution (0.6mol / L), stir at 30°C for 30min, then add 10mL of tetraethyl orthosilicate dropwise at 30°C Stir at low temperature for 2 hours, then transfer to a reaction kettle for hydrothermal reaction at 80°C for 12 hours to obtain a gel, dry the gel and put it in a muffle furnace for calcination at 600°C for 2 hours, and after cooling with the furnace, obtain SiO 2 hollow microspheres;

[0041] (2), 0.5gSiO 2 The hollow microspheres and 0.05g of 3-aminopropyltrimethoxysilane were added to 40mL of N,N-dimethylacetamide, stirred by ultrasonic (power 200W) for 3h, and then 12mmol of 4,4'- Diaminodiphenyl sulfide, stirred until completely dissolved, then added 12mmol 3,3',4,4'-biphenyltetracarboxylic dianhydride and 10mL of N,N-dimethylacetamide, continued stirr...

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Abstract

The invention provides a low-dielectric-constant polyimide film and application thereof. The film comprises polyimide and SiO2 hollow microspheres uniformly dispersed in the polyimide. The SiO2 hollow microspheres are prepared by taking chitosan or derivatives thereof as a template agent. According to the low-dielectric-constant polyimide film, the SiO2 hollow microspheres are uniformly dispersed in the polyimide, so that the dielectric property of the polyimide is effectively reduced, and the mechanical property of the obtained polyimide film is also improved.

Description

technical field [0001] The invention relates to the technical field of insulating materials, in particular to a polyimide film with low dielectric constant and its application. Background technique [0002] With the development of the microelectronics industry, the functions of microelectronic components are continuously enhanced while the volume is continuously reduced, the size of VLSI is also gradually reduced, and the delay of resistance and capacitance (Rc) of metal interconnection increases by nearly quadratic. And cause signal transmission delay and crosstalk, directly affect device performance. In order to reduce the increase in power consumption caused by signal transmission delay, crosstalk and dielectric loss, meet the high-speed signal transmission, and further improve the function of electronic circuits, dielectric interlayer insulating materials are required to have a lower dielectric constant. [0003] Polyimide has been widely used in the microelectronics in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/08C08K7/26C08K9/06C08J5/18C08G73/10H01L23/29
CPCC08J5/18C08G73/1071C08G73/1067C08G73/1064H01L23/295C08J2379/08C08K7/26C08K9/06
Inventor 曹河文许辉祝春才
Owner 浙江中科玖源新材料有限公司
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