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Method for growing gallium oxide film through low-pressure chemical vapor deposition

A low-pressure chemical vapor phase and gallium oxide technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as high cost and complicated operation, and achieve low cost, high light transmittance, and improved The effect of interface defects

Active Publication Date: 2021-04-13
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the deficiencies of the existing technology, especially the problems of complex operation and high cost of the existing growth method, the present invention provides a method for growing a gallium oxide thin film by low-pressure chemical vapor deposition

Method used

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  • Method for growing gallium oxide film through low-pressure chemical vapor deposition
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  • Method for growing gallium oxide film through low-pressure chemical vapor deposition

Examples

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Effect test

Embodiment 1

[0041] A method for growing a gallium oxide film by low-pressure chemical vapor deposition, the steps comprising the following steps:

[0042] (1) ultrasonically cleaning the substrate with deionized water, acetone and ethanol respectively, and drying for pretreatment to obtain a pretreated substrate;

[0043](2) 0.17g of metal gallium particles are placed in a small crucible, placed on a corundum plate together with the pretreated substrate, and placed in the tube furnace cavity, wherein the substrate is placed horizontally, and the gallium source particles are placed in the The distance between the small crucible and the substrate is 6 cm, and the distance between the gallium source and the edge of the central temperature zone of the tube furnace is 10 cm;

[0044] (3) Seal the tube furnace, evacuate for 30 minutes, and flush the tube furnace cavity 3 times with nitrogen;

[0045] (4) Introduce nitrogen to adjust the pressure in the chamber to 700 Torr, and the nitrogen gas...

Embodiment 2

[0049] A method for growing a gallium oxide film by low-pressure chemical vapor deposition, the steps comprising the following steps:

[0050] (1) ultrasonically cleaning the substrate with deionized water, acetone and ethanol respectively, and drying for pretreatment to obtain a pretreated substrate;

[0051] (2) 0.17g of metal gallium particles are placed in a small crucible, placed on a corundum plate together with the pretreated substrate, and placed in the tube furnace cavity, wherein the substrate is placed horizontally, and the gallium source particles are placed in the The distance between the small crucible and the substrate is 6 cm, and the distance between the gallium source and the edge of the central temperature zone of the tube furnace is 10 cm;

[0052] (3) Seal the tube furnace, evacuate for 30 minutes, and flush the tube furnace cavity 3 times with nitrogen;

[0053] (4) Introduce nitrogen to adjust the pressure in the chamber to 600 Torr, the nitrogen gas fl...

Embodiment 3

[0057] A method for growing a gallium oxide film by low-pressure chemical vapor deposition, the steps comprising the following steps:

[0058] (1) ultrasonically cleaning the substrate with deionized water, acetone and ethanol respectively, and drying for pretreatment to obtain a pretreated substrate;

[0059] (2) 0.17g of metal gallium particles are placed in a small crucible, placed on a corundum plate together with the pretreated substrate, and placed in the tube furnace cavity, wherein the substrate is placed horizontally, and the gallium source particles are placed in the The distance between the small crucible and the substrate is 6 cm, and the distance between the gallium source and the edge of the central temperature zone of the tube furnace is 10 cm;

[0060] (3) Seal the tube furnace, evacuate for 30 minutes, and flush the tube furnace cavity 3 times with nitrogen;

[0061] (4) Introduce nitrogen to adjust the pressure in the chamber to 400 Torr, and the nitrogen ga...

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Abstract

The invention relates to a method for growing a gallium oxide thin film through low-pressure chemical vapor deposition.According to the method, a gallium oxide epitaxial thin film is grown through low-pressure chemical vapor deposition, and then in-situ post-annealing treatment is carried out to treat the thin film; in-situ post-annealing treatment is simple in process operation, recrystallization of the film can be promoted, remelting and agglomeration of particles on the surface of the film are caused, and then the surface roughness is reduced; and in addition, the interface defect can be improved, and the crystal quality of the Ga2O3 thin film is remarkably improved. According to the method, low-pressure chemical vapor deposition (LPCVD) technical equipment is simple, the growth rate is high, the repeatability is high, the cost is low, and the grown gallium oxide film is high in light transmittance and high in quality.

Description

technical field [0001] The invention relates to a method for growing a gallium oxide film by low-pressure chemical vapor deposition, and belongs to the technical field of semiconductor materials. Background technique [0002] oxide semiconductor Ga 2 O 3 It is a new type of wide-bandgap semiconductor material, and there are six isomers, namely α-Ga 2 O 3 , β-Ga 2 O 3 , γ-Ga 2 O 3 , δ-Ga 2 O 3 , ε-Ga 2 O3 and κ-Ga 2 O 3 , where β-Ga 2 O 3 is the most stable structure. At room temperature, β-Ga 2 O 3 The forbidden band width is about 4.9eV, and the breakdown electric field strength is 8MV / cm. β-Ga 2 O 3 It has excellent chemical stability and high temperature thermal stability, has high transparency in the deep ultraviolet to visible light range, and can achieve n-type doping. The above advantages make β-Ga 2 O 3 It has attracted much attention in the fields of solar-blind detectors, transparent electronic devices and high-power electronic devices. β-Ga ...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B33/02C30B25/16C30B25/14
CPCC30B29/16C30B33/02C30B25/16C30B25/14
Inventor 徐明升王帅徐现刚王卿璞彭燕
Owner SHANDONG UNIV
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