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Reflection type deep ultraviolet light source excited by space electrons

A technology of deep ultraviolet light source and electronic excitation, applied in the field of ultraviolet light source, can solve the problems of low external quantum efficiency and no consideration of light self-absorption

Active Publication Date: 2021-04-20
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the problem that the self-absorption of light by the large-scale wide-bandgap semiconductor itself is not considered in the above-mentioned prior art, the present invention provides a reflective deep-ultraviolet light source excited by space electrons, which can effectively Improve the external quantum efficiency, produce efficient deep ultraviolet luminescence

Method used

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  • Reflection type deep ultraviolet light source excited by space electrons
  • Reflection type deep ultraviolet light source excited by space electrons
  • Reflection type deep ultraviolet light source excited by space electrons

Examples

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Embodiment 1

[0040] like figure 1 , figure 2 , image 3As shown, a reflective deep ultraviolet light source excited by space electrons includes a cathode substrate 3 with conductive properties, a separator 6, an anode substrate 2 with conductive properties, a casing 1, two electrode wires 8, quartz glass 5, super wide bandgap semiconductor 7;

[0041] Wherein, the cathode substrate 3 is provided with a parabolic structure 10, the bottom of the parabolic structure 10 is provided with a through hole 11, and the parabolic structure 10 is provided with a cold cathode structure 4;

[0042] The anode substrate 2 is provided with an adjustment mechanism adapting to the ultra-wide bandgap semiconductor 7 of different sizes, and the ultra-wide bandgap semiconductor 7 is fixed in the adjustment mechanism;

[0043] The cathode substrate 3 is arranged opposite to the anode substrate 2, and is separated by a separator 6 to form a vacuum gap structure, and the cathode substrate 3, the separator 6, a...

Embodiment 2

[0059] Based on the reflective deep ultraviolet light source excited by space electrons described in Embodiment 1, that is, this embodiment uses the same reflective deep ultraviolet light source as that of Embodiment 1. Specifically, the field electron emission nanomaterial described in this embodiment adopts an ordered carbon nanotube film, and the ultra-wide bandgap semiconductor adopts a diamond block material, thereby further verifying the reflective method of space electron excitation described in this embodiment. Technical effect of deep ultraviolet light source.

[0060] like Figure 4 Shown is the SEM topography of the ordered carbon nanotube film material. In this embodiment, the ordered carbon nanotube film is directly transferred to the parabolic structure of the cathode substrate, effectively ensuring good adhesion and uniformity. Driven by an external electric field, the ordered carbon nanotube film emits electrons from the tip, and the generated high-energy spac...

Embodiment 3

[0065] Based on a reflective deep ultraviolet light source excited by space electrons described in Embodiment 1, that is, this embodiment uses the same reflective deep ultraviolet light source as that of Embodiment 1. However, this embodiment selects a cold cathode structure and an ultra-wide bandgap semiconductor different from that of Embodiment 2. Specifically, the field electron emission nanomaterial described in this embodiment uses a single crystal metal molybdenum microcone array, and the ultra-wide bandgap semiconductor uses aluminum nitride, so as to further verify the space electron excitation described in this embodiment. Technical effect of reflective deep ultraviolet light source.

[0066] Figure 8 This is the SEM topography image of the single-crystal metal molybdenum micro-cone array material in this embodiment. The single-crystal metal molybdenum micro-cone array is directly grown on the parabolic structure of the cathode substrate, which has good uniformity ...

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Abstract

The invention provides a reflection type deep ultraviolet light source excited by space electrons. The reflection type deep ultraviolet light source excited by space electrons comprises a cathode substrate with a conductive characteristic, an isolator, an anode substrate with a conductive characteristic, a shell, two electrode wires and quartz glass, the cathode substrate is provided with a paraboloid structure, a through hole is formed in the bottom of the paraboloid structure, and a cold cathode structure is arranged on the paraboloid structure; a position-adjustable ultra-wide bandgap semiconductor is arranged on the anode substrate; the cathode substrate and the anode substrate are oppositely arranged and are separated by an isolator to form a vacuum gap structure; the cathode substrate, the isolator and the anode substrate are adopted to form a whole and are arranged in the shell; the shell is provided with an opening, and quartz glass is embedded in the opening to form a quartz light outlet; the ultra-wide bandgap semiconductor, the through hole and the quartz light outlet are positioned on the same horizontal line; the shell is packaged in vacuum; and the cathode substrate and the anode substrate are connected with a pulse driving circuit through electrode wires. According to the invention, the external quantum efficiency can be effectively improved, and efficient deep ultraviolet luminescence is generated.

Description

technical field [0001] The invention relates to the technical field of ultraviolet light sources, and more specifically, to a reflective deep ultraviolet light source excited by space electrons. Background technique [0002] In addition to being widely used in medical and environmental purification fields such as radiation sterilization and pollutant decomposition, deep ultraviolet light sources also have increasingly important applications in the fields of integrated circuit manufacturing that require photolithography and photocuring, and military non-line-of-sight communications. value. Traditional mercury lamps, plasma or excimer deep ultraviolet light sources have many problems such as high power consumption, large volume, pollution, and high cost. The solid-state deep ultraviolet light source made of ultra-wide bandgap semiconductor can effectively solve the above problems. However, current semiconductor-based solid-state deep-UV light sources have very low electro-op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J61/06H01J61/30
Inventor 沈岩邓少芝邢阳柯彦淋陈军
Owner SUN YAT SEN UNIV