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Method for processing gallium nitride by femtosecond laser dry etching

A technology of femtosecond laser and dry etching, applied in the field of femtosecond laser application, can solve the problems of complex process, low processing quality and high technical threshold

Active Publication Date: 2021-04-30
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for processing gallium nitride by femtosecond laser and dry etching, which solves the complex process and technical problems of the existing processing methods. Problems such as high threshold and low processing quality

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  • Method for processing gallium nitride by femtosecond laser dry etching
  • Method for processing gallium nitride by femtosecond laser dry etching

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Embodiment 1

[0027] The method for processing gallium nitride by femtosecond laser dry etching, the specific steps are as follows:

[0028] Step 1: Build a femtosecond laser micromachining system, using a femtosecond laser with a center wavelength of 800nm, a repetition rate of 1kHz, and a pulse width of 30fs. Through an objective lens with a numerical aperture of 0.5, it is focused on the surface of the gallium nitride sample fixed on the three-dimensional translation stage;

[0029] Step 2: Controlling the number of femtosecond laser pulses acting on the gallium nitride surface is 1000, the pulse energy is 8mW, and the processing point interval is 20μm;

[0030] Step 3: ultrasonically clean the gallium nitride sample after femtosecond laser processing in acetone, ethanol, and deionized water for 5 minutes to remove particles produced by laser ablation and scattered on the surface of the sample; step 4: place the cleaned sample In the etching chamber of the inductively coupled plasma etc...

Embodiment 2

[0037] The method for processing gallium nitride by femtosecond laser dry etching, the specific steps are as follows:

[0038] Step 1: Build a femtosecond laser micromachining system, using a femtosecond laser with a center wavelength of 800nm, a repetition rate of 1kHz, and a pulse width of 30fs. Through an objective lens with a numerical aperture of 0.5, it is focused on the surface of the gallium nitride sample fixed on the three-dimensional translation stage;

[0039]Step 2: Controlling the number of femtosecond laser pulses acting on the gallium nitride surface is 50, the pulse energy is 7mW, and the processing point interval is 20μm;

[0040] Step 3: ultrasonically clean the gallium nitride sample after femtosecond laser processing in acetone, ethanol, and deionized water for 5 minutes to remove particles produced by laser ablation and scattered on the surface of the sample; step 4: place the cleaned sample In the etching chamber of the inductively coupled plasma etchin...

Embodiment 3

[0047] The method for processing gallium nitride by femtosecond laser dry etching, the specific steps are as follows:

[0048] Step 1: Build a femtosecond laser micromachining system, using a femtosecond laser with a center wavelength of 800nm, a repetition rate of 1kHz, and a pulse width of 30fs. Through an objective lens with a numerical aperture of 0.5, it is focused on the surface of the gallium nitride sample fixed on the three-position translation stage;

[0049] Step 2: Controlling the number of femtosecond laser pulses acting on the gallium nitride surface is 50, the pulse energy is 4mW, and the processing point interval is 20μm;

[0050] Step 3. Ultrasonic cleaning the gallium nitride sample after femtosecond laser processing in acetone, ethanol and deionized water for 5 minutes respectively, to remove the particles produced by laser ablation and scattered on the surface of the sample;

[0051] Step 4, place the cleaned sample in the etching chamber of the inductivel...

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Abstract

The invention relates to a method for processing gallium nitride by femtosecond laser-assisted dry etching. The method realizes preparation of a gallium nitride material microstructure. Firstly, an ablation crater is formed on the surface of a gallium nitride material under the action of femtosecond laser, and local area modification of the gallium nitride material is achieved; then, in the atmosphere of mixed gas of chlorine and boron trichloride, physical and chemical etching is conducted on the gallium nitride material obtained after femtosecond laser processing through an inductively coupled plasma dry etching method, due to femtosecond laser irradiation, the property of the gallium nitride material is changed, so that the etching rates of a modified region and an unmodified region formed after femtosecond laser irradiation by inductively coupled plasma dry etching are different, and finally, a microstructure is formed in the femtosecond laser modified region. The method for processing the gallium nitride material is simple in processing mode and low in cost.

Description

technical field [0001] The invention relates to a method for processing gallium nitride by femtosecond laser dry etching, wherein the method of combining femtosecond laser processing and inductively coupled plasma (ICP) dry etching is used to realize the processing of gallium nitride materials. It belongs to the technical field of femtosecond laser application. Background technique [0002] As a representative third-generation semiconductor material, gallium nitride has excellent properties such as wide band gap, strong chemical stability, and ultraviolet light transmission. It is often used in devices such as deep ultraviolet light-emitting diodes (LEDs) and ultraviolet lasers (LDs). preparation. However, due to the extremely stable chemical properties of gallium nitride, it basically does not react with acidic and alkaline solutions at room temperature; at the same time, gallium nitride also has the characteristics of high hardness and high melting point. Microfabricatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/362H01L21/3065
CPCB23K26/362H01L21/3065Y02P70/50
Inventor 欧艳付斯倚李圣钱锦文肖逸锋吴靓张明华
Owner XIANGTAN UNIV