Thin film gallium arsenide solar cell top electrode and preparation method thereof
A solar cell and gallium arsenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as battery damage and battery output power drop, and achieve the effect of good bonding force, avoiding short circuit phenomenon and mature technology.
Active Publication Date: 2021-05-04
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology
At present, thin-film gallium arsenide solar cells mostly use pure metal system as the upper electrode. The disadvantage is that due to the good ductility of the metal and the brittle thin-film gallium arsenide material, the battery is easily damaged when the electrode is subjected to local pressure, and the upper and lower electrodes are short-circuited. Leading to a significant drop in battery output power
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[0048] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.
[0049] Such as Figure 1-3 , in the embodiment of the present application, the present invention provides an upper electrode of a thin film gallium arsenide solar cell, comprising: a bottom metal gate 3, a dielectric layer 4 and a top metal gate 5, wherein the bottom metal gate 3 , the dielectric layer 4 and the top metal gate 5 are sequentially arranged on the outer surface of the epitaxial wafer 1 from inside to outsid...
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Abstract
The invention relates to a thin film gallium arsenide solar cell top electrode and a preparation method thereof, the thin film gallium arsenide solar cell top electrode comprises a bottom layer metal gate, a dielectric layer and a top layer metal gate, the bottom layer metal gate, the dielectric layer and the top layer metal gate are sequentially arranged on the outer surface of an epitaxial wafer from inside to outside, and the bottom layer metal gate is connected with the top layer metal gate. The top electrode of the thin film gallium arsenide solar cell and the preparation method thereof have the following advantages and positive effects that a local insulation type top electrode structure is used, so that the short circuit phenomenon caused when the cell is locally pressed can be effectively avoided, and the output efficiency of the cell is ensured; the oxide dielectric layer is used as an insulating structure, and has the characteristics of high temperature resistance, good binding force, high insulativity and the like; the top electrode is prepared by adopting a photoetching technology and a vacuum evaporation technology, and the method has the characteristics of simple process, mature technology and the like.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an upper electrode of a thin-film gallium arsenide solar cell and a preparation method thereof. Background technique [0002] Metal-organic compound vapor phase epitaxy technology, referred to as MOCVD, is to use hydrogen carrier gas to send metal-organic compound vapor and non-metallic hydride to the heated substrate in the reaction chamber through multiple switches, and finally grow an epitaxial layer on it through decomposition reaction. Advanced technology. Its growth process involves complex processes of fluid mechanics, gas phase and solid surface reaction kinetics, and the coupling of the two. Generally, its epitaxial growth is carried out under thermodynamic near-equilibrium conditions. [0003] Using gallium arsenide as a substrate to grow III-V epitaxial structures is an important technical means for making solar cells and LEDs. Among them, solar cell...
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IPC IPC(8): H01L31/0224H01L31/0693H01L31/18
CPCH01L31/022433H01L31/0693H01L31/184Y02E10/544Y02P70/50
Inventor 姜明序吴致丞张璐高鹏刘兴江
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST