Supercharge Your Innovation With Domain-Expert AI Agents!

Thin film with high luminous intensity as well as preparation method and application of thin film

A technology of thin film preparation and luminous intensity, which is applied in the field of chemical modification, can solve the problems of inconspicuous enhancement effect, randomness of enhancement area, long preparation cycle, etc., and achieve the effect of short preparation cycle, low cost and high production capacity

Active Publication Date: 2021-05-11
NORTHEAST NORMAL UNIVERSITY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods are usually complicated in process, long in preparation period and high in cost.
In addition, the enhanced area is random, and the enhanced effect is not obvious, usually only 5-10 times the enhanced effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film with high luminous intensity as well as preparation method and application of thin film
  • Thin film with high luminous intensity as well as preparation method and application of thin film
  • Thin film with high luminous intensity as well as preparation method and application of thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The preparation process flow chart of embodiment 1 can refer to figure 1 , figure 1 It is a process flow chart of the thin film preparation method described in the present invention.

[0050] Such as figure 1 Shown, film preparation method comprises the steps:

[0051] Step 1: Prepare molybdenum disulfide: take sulfur powder and molybdenum trioxide powder as raw materials, wherein, sulfur powder (product source is: Sigma-Aldrich, 99.99%, 500mg) and molybdenum trioxide powder (product source is Sigma-Aldrich, 99.98%, 5mg), sulfur powder and molybdenum trioxide powder were respectively placed in the upstream and center of the tube furnace with a distance of 31cm, and the substrate was placed 2cm downstream of the molybdenum trioxide powder. Deposition method (wherein, the process adopted by the chemical vapor deposition method can be a conventional process, such as a heating temperature of 850 ° C) to obtain a single-layer molybdenum disulfide original sample (ie, a su...

Embodiment 2

[0060] The preparation process flow chart of embodiment 2 can refer to figure 1 , figure 1 It is a process flow chart of the thin film preparation method described in the present invention.

[0061] Such as figure 1 Shown, film preparation method comprises the steps:

[0062] Step 1: Prepare tungsten disulfide: take sulfur powder and tungsten oxide powder as raw materials, wherein, sulfur powder (source of product is Sigma-Aldrich, 99.99%, 1g) and tungsten trioxide powder (source of product is Sigma-Aldrich, 99.98% , 5 mg) were placed in two quartz boats, and 15 mg of sodium chloride powder was added to the tungsten trioxide powder as a flux. The sulfur powder was placed in the center of the low temperature zone of the tube furnace, 55 cm away from the tungsten trioxide powder placed in the center of the high temperature zone of the tube furnace. Subsequently, the substrate is placed downstream of the tungsten trioxide powder, with a distance of 0.5 cm, and then the chemic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a thin film with high luminous intensity. The preparation method comprises the following steps of step A, preparing a sulfide thin film on a substrate through a chemical vapor deposition method; and step B, carrying out surface modification on the surface of the sulfide film through a trifluoromethanesulfonic acid solution to obtain the thin film with high luminous intensity. In addition, the invention also discloses the thin film with high luminous intensity, and the thin film is prepared by adopting the thin film preparation method. Besides, the invention further discloses application of the thin film with high luminous intensity, and the thin film is used for preparing a two-dimensional photoelectric device. The molybdenum disulfide and tungsten disulfide thin film with high luminous efficiency is prepared through a method of modifying molybdenum disulfide and tungsten disulfide surfaces by using the trifluoromethanesulfonic acid solution, and the problem of low luminous efficiency of molybdenum disulfide and tungsten disulfide is solved.

Description

technical field [0001] The invention relates to a chemical modification method for improving the luminous efficiency of a single-layer transition metal chalcogen compound, specifically a chemical modification method for improving the luminous efficiency of a single-layer transition metal chalcogen compound such as molybdenum disulfide and tungsten disulfide through an organic superacid Modification method. Background technique [0002] Transition metal chalcogenides (TMDs for short) have similar characteristics to graphene due to their large specific surface area, good flexibility, and high potential carrier mobility, and TMDs also have unique layer-related band gaps in the visible and near-infrared spectral regions. feature. Therefore, transition metal sulfides are widely used in various optoelectronic devices, such as light-emitting devices, transistors, photovoltaic devices, and nanoresonator lasers. [0003] Currently, the controlled large-area synthesis of 1L-TMDs by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44C23C16/56H01L33/26B05D1/00
CPCC23C16/305C23C16/56C23C16/4401H01L33/26B05D1/005
Inventor 刘为振李远征孙颖冯秋实
Owner NORTHEAST NORMAL UNIVERSITY
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com