Preparation method of sulfur-doped bismuth trioxide, negative electrode material and supercapacitor

A negative electrode material, sulfur-doped technology, applied in chemical instruments and methods, hybrid capacitor electrodes, hybrid/electric double-layer capacitor manufacturing, etc., can solve problems that hinder the development of new high-energy-density energy storage devices, and achieve excellent capacitance performance and cycle stability, short time consumption, and low equipment cost

Active Publication Date: 2021-06-01
INNER MONGOLIA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although carbon-based materials have been widely used in the market as the anode of supercapacitors, their low specific capacitance is still their main disadvantage, which hinders the further development of new energy storage devices with high energy density.

Method used

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  • Preparation method of sulfur-doped bismuth trioxide, negative electrode material and supercapacitor
  • Preparation method of sulfur-doped bismuth trioxide, negative electrode material and supercapacitor
  • Preparation method of sulfur-doped bismuth trioxide, negative electrode material and supercapacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Add 0.458g of bismuth nitrate pentahydrate into 21mL of solvent (the volumes of ethanol and ethylene glycol are 14mL and 7mL, respectively), and stir at room temperature for 30min;

[0033] (2) The obtained solution was transferred to a 100 mL reaction kettle, and kept at 160° C. in an electric blast drying oven for 8 hours.

[0034] (3) cooling and centrifuging to obtain a white precipitate, washing the precipitate with deionized water and absolute ethanol three times alternately, drying in vacuum at 80°C for 12 hours, and fully grinding the precipitate into a fine powder;

[0035] (4) Put the above powder in a muffle furnace for calcination at 300°C for 1 hour, and thus obtain yellow Bi 2 o 3 Powder, marked as Bi-0S.

Embodiment 2

[0037] (1) Add 0.458g of bismuth nitrate pentahydrate into 21mL of solvent (the volumes of ethanol and ethylene glycol are 14mL and 7mL, respectively), and stir at room temperature for 30min;

[0038] (2) The obtained solution was transferred to a 100 mL reaction kettle, and kept at 160° C. in an electric blast drying oven for 8 hours.

[0039] (3) cooling and centrifuging to obtain a white precipitate, washing the precipitate with deionized water and absolute ethanol three times alternately, drying in vacuum at 80°C for 12 hours, and fully grinding the precipitate into a fine powder;

[0040] (4) Put the above powder in a muffle furnace for calcination at 300°C for 1 hour, and thus obtain yellow Bi 2 o 3 powder.

[0041] (5) will Bi 2 o 3 The powder was further annealed at 400 °C for 30 min in the presence of 0.025 g of sulfur powder to form S-doped Bi 2 o 3 , labeled Bi-25S.

Embodiment 3

[0043] (1) Add 0.458g of bismuth nitrate pentahydrate into 21mL of solvent (the volumes of ethanol and ethylene glycol are 14mL and 7mL, respectively), and stir at room temperature for 30min;

[0044] (2) The obtained solution was transferred to a 100 mL reaction kettle, and kept at 160° C. in an electric blast drying oven for 8 hours.

[0045] (3) cooling and centrifuging to obtain a white precipitate, washing the precipitate with deionized water and absolute ethanol three times alternately, drying in vacuum at 80°C for 12 hours, and fully grinding the precipitate into a fine powder;

[0046] (4) Put the above powder in a muffle furnace for calcination at 300°C for 1 hour, and thus obtain yellow Bi 2 o 3 powder.

[0047] (5) will Bi 2 o 3 The powder was further annealed at 400 °C for 30 min in the presence of 0.050 g sulfur powder to form sulfur-doped Bi 2 o 3 , labeled Bi-50S.

[0048]The scanning electron microscope (SEM) images and transmission electron microscope (...

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Abstract

The invention provides a preparation method of sulfur-doped bismuth trioxide, a negative electrode material and a supercapacitor. The method comprises the following steps: (1) weighing a predetermined amount of bismuth nitrate pentahydrate, adding the bismuth nitrate pentahydrate into a predetermined volume of an alcohol solvent, and then stirring at room temperature for 30 minutes; (2) transferring the solution obtained in the step (1) into a high-pressure reaction kettle, and then carrying out heat preservation and centrifugal treatment to obtain a white precipitate; (3) washing the white precipitate obtained in the step (2), thoroughly drying, and fully grinding into fine powder; (4) calcining the powder obtained in the step (3) in a muffle furnace to obtain yellow bismuth trioxide powder; and (5) further annealing the bismuth trioxide powder obtained in the step (4) in the presence of sulfur powder to prepare the sulfur-doped bismuth trioxide. The preparation method has the advantages of cheap and easily available raw materials, low equipment cost, simple operation process and short time consumption, and is suitable for popularization of industrial production.

Description

technical field [0001] The invention belongs to the field of capacitor electrode materials, and relates to a sulfur-doped bismuth trioxide material (Bi 2 o 3 ) preparation method, adopting the negative electrode material of sulfur-doped bismuth trioxide, and the supercapacitor comprising the negative electrode material. Background technique [0002] Supercapacitors (Supercapacitors, SC) are a kind of high-efficiency energy storage devices, which have broad development prospects because of their high cycle stability, low maintenance cost and fast charge and discharge. At present, the important factor restricting the commercial application of SC is the low energy density. The ideal solution is to increase its energy density as much as possible without sacrificing its high power density and cycle life, so as to meet the requirements of practical applications. The key factor that really determines the energy density of supercapacitors is the electrode material. So far, the res...

Claims

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Application Information

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IPC IPC(8): C01G29/00B82Y30/00B82Y40/00H01G11/24H01G11/26H01G11/30H01G11/46H01G11/86
CPCC01G29/00B82Y30/00B82Y40/00H01G11/46H01G11/30H01G11/24H01G11/26H01G11/86C01P2004/03C01P2004/04C01P2004/62Y02E60/13
Inventor 张欣高艳芳李利军鲍新
Owner INNER MONGOLIA UNIV OF TECH
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