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A kind of preparation method of high-power far-infrared diamond laser single crystal composite material

A diamond single crystal and composite material technology, which is applied in the field of preparation of high-power far-infrared diamond laser single crystal composite materials, can solve the problems of poor thermal conductivity, multi-layer film structure multi-photon absorption, and affect the high power output of lasers, etc., to solve high heat problems, solving quantum deficit, and the effect of high output power

Active Publication Date: 2022-07-12
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Among the currently reported laser crystal materials, laser output from visible light to far-infrared bands can be achieved, but there are still problems such as poor thermal conductivity and multi-photon absorption in multi-layer film structures, which seriously affect the high power output of lasers.

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  • A kind of preparation method of high-power far-infrared diamond laser single crystal composite material
  • A kind of preparation method of high-power far-infrared diamond laser single crystal composite material

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Embodiment 1

[0036] 1) A method for preparing a high-power far-infrared diamond laser single-crystal composite material, which mainly includes: preparing a high-quality, high-transmittance CVD (100) diamond single-crystal film, and using a microwave plasma chemical vapor deposition system (CVD) to deposit the diamond single-crystal film; The crystal film was grown at a controlled temperature of 900 °C, the growth rate was 6 μm / h, and the deposition time was 217 h. Finally, a 1.3 mm thick as-deposited (100) diamond single crystal film was obtained, such as figure 1 (a).

[0037] 2) Obtaining a double-sided polished diamond film, the specific steps include: firstly, performing laser planarization on the diamond growth surface, excising 0.3 mm thick diamond on the growth surface, removing large diamond particles on the surface, and then carrying out the diamond single crystal film on a single crystal polishing machine. For double-sided polishing, firstly adjust the rotating speed of the polis...

Embodiment 2

[0043] 1) A method for preparing a high-power far-infrared diamond laser single-crystal composite material, which mainly includes: preparing a high-quality, high-transmittance CVD (100) diamond single-crystal film, and using a microwave plasma chemical vapor deposition system (MPCVD) to deposit the diamond single-crystal film; The crystal film was grown at a controlled temperature of 950 °C, the growth rate was 7 μm / h, and the deposition time was 171 h. Finally, a deposited (100) oriented diamond single crystal film with a thickness of 1.2 mm was obtained, such as figure 1 (a).

[0044] 2) Obtaining a double-sided polished diamond film, the specific steps include: firstly, performing laser planarization on the diamond growth surface, excising 0.2 mm thick diamond on the growth surface, removing large diamond particles on the surface, and then performing the diamond single crystal film on a single crystal polishing machine. For double-sided polishing, firstly adjust the polishi...

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Abstract

A method for preparing a high-power far-infrared diamond laser single crystal composite material belongs to the field of diamond laser crystal materials. First, the (100) diamond single crystal film was prepared by microwave plasma chemical vapor deposition (CVD); then after laser planarization, polishing, pickling, and acetone and alcohol cleaning, the thermal conductivity ≥2000w / (m·K), the distance In the infrared band (8-12 μm), the infrared transmittance is 71% diamond single crystal film; then a 1-2 nm thick (100) indium (In) layer is deposited on one side of the double-sided polished diamond single crystal film by magnetron sputtering as a Lattice mismatch buffer layer; finally heteroepitaxial growth of (100) silver indium gallium selenide (AgGa) on the surface of the indium (In) layer 1‑ x In x Se 2 ) nonlinear crystal material, and then obtain single crystal silver indium gallium selenide (AgGa 1‑x In x Se 2 ) / indium (In) / diamond laser single crystal composite. The diamond laser single crystal composite material of the invention has high thermal conductivity and high output power of far-infrared laser, and is particularly suitable for application requirements in the fields of far-infrared solid laser, optical communication and the like.

Description

technical field [0001] The invention relates to the technical field of laser crystal materials, in particular to a preparation method of a high-power far-infrared diamond laser single crystal composite material. The material can be used in optical fields such as far-infrared solid-state lasers and optical communications. Background technique [0002] Due to traditional CO 2 Gas lasers cannot completely cover the far-infrared band (8-12 μm), and far-infrared lasers have important applications in infrared photoelectric countermeasures, differential radar, laser active imaging radar, free space laser communication and other fields. The 12μm band laser is currently a research hotspot in the field of solid-state lasers. Commonly used non-linear crystal materials in the far infrared band (8-12 μm) mainly include: cadmium selenide (CdSe), gallium selenide (GaSe), zinc germanium phosphorus (ZnGeP) 2 ), silver gallium selenide (AgGaSe 2 ), and silver indium gallium selenide (AgGa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/16H01S3/06C30B25/02C30B23/02C30B29/04C30B29/46
CPCC30B25/02C30B23/02C30B29/04C30B23/025C30B29/46H01S3/16H01S3/0619
Inventor 李成明黄亚博陈良贤刘金龙黄珂邵思武魏俊俊张建军安康郑宇亭
Owner UNIV OF SCI & TECH BEIJING
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