Unlock instant, AI-driven research and patent intelligence for your innovation.

Titanium dioxide/silver/titanium dioxide transparent conductive film and preparation method and application thereof

A technology of transparent conductive film and titanium dioxide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult operation, high cost, and toxicity, and achieve low production cost, good photoelectric performance, and high light transmittance.

Active Publication Date: 2021-06-11
ENERGY RES INST OF SHANDONG ACAD OF SCI
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problem that the transparent conductive film in the prior art is often doped with F, which makes the preparation process difficult to operate, high in cost, toxic, and has certain requirements for waste disposal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Titanium dioxide/silver/titanium dioxide transparent conductive film and preparation method and application thereof
  • Titanium dioxide/silver/titanium dioxide transparent conductive film and preparation method and application thereof
  • Titanium dioxide/silver/titanium dioxide transparent conductive film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] In one or some embodiments of the present disclosure, a method for preparing a titanium dioxide / silver / titanium dioxide transparent conductive film is provided, which includes the following steps: using argon as the plasma gas source, oxygen as the reaction gas, and remote plasma sputtering The technology first deposits a layer of titanium dioxide film on the substrate by reactive sputtering, and then DC sputters a layer of pure silver film on the titanium dioxide film. During the sputtering process, the oxygen flow rate and sputtering power are controlled, and finally the reaction Sputter a layer of titanium dioxide film, vested.

[0033]Remote plasma sputtering technology (HiTUS) is a sputtering technology with high target utilization rate, which completes sputtering through high-density plasma generated at a distance from the target. In the prior art, the corresponding remote plasma sputtering system is fixed with a plasma launch system (The Plasma Launch System, PLS...

Embodiment 1

[0075] The preparation method of the titanium dioxide / silver / titanium dioxide transparent conductive film of the present embodiment comprises the following steps:

[0076] 1) Cleaning the substrate: put the glass substrate into acetone, isopropanol, ethanol and deionized water in sequence for ultrasonic cleaning, each cleaning time is 20min, and the cleaning temperature is 50°C; after ultrasonic cleaning, take out the substrate and use Wipe the dust cloth clean, and finally put it into the sputtering chamber of the remote plasma sputtering system, ready for sputtering;

[0077] 2) Sputtering: Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0078] Before reactive sputtering, vacuum the sputtering chamber of the remote plasma sputtering system to 9×10 -6 mbar, and then 70 sccm of argon gas is introduced into the ...

Embodiment 2

[0084] The preparation method of the titanium dioxide / silver / titanium dioxide transparent conductive film of the present embodiment comprises the following steps:

[0085] 1) Cleaning the substrate: put the glass substrate into acetone, isopropanol, ethanol and deionized water in sequence for ultrasonic cleaning, each cleaning time is 20min, and the cleaning temperature is 50°C; after ultrasonic cleaning, take out the substrate and use Wipe the dust cloth clean, and finally put it into the sputtering chamber of the remote plasma sputtering system, ready for sputtering;

[0086] 2) Sputtering: Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0087] Before reactive sputtering, vacuum the sputtering chamber of the remote plasma sputtering system to 9×10 -6 mbar, and then 70 sccm of argon gas is introduced into the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of electronic materials, and particularly provides a titanium dioxide / silver / titanium dioxide transparent conductive film and a preparation method and application thereof. The silver layer is a pure silver layer, and the thickness change of the silver layer corresponds to different photoelectric properties. The preparation method comprises the following steps that argon serves as a plasma gas source, oxygen serves as reaction gas, a far-source plasma sputtering technology is adopted, a layer of titanium dioxide film is deposited on a substrate in a reactive sputtering mode, then a layer of pure silver film is formed on the titanium dioxide film in a direct-current sputtering mode, and in the sputtering process, the oxygen flow and the sputtering power are controlled; and finally, reactive sputtering is performed on a layer of titanium dioxide thin film on the basis to obtain the transparent conductive film. The problems that in the prior art, a transparent conducting film is often doped with F, so that the preparation process is not easy to operate, the cost is high, toxicity is achieved, and certain requirements for waste treatment are met are solved.

Description

technical field [0001] The disclosure relates to the technical field of electronic materials, and specifically provides a titanium dioxide / silver / titanium dioxide transparent conductive film as well as a preparation method and application thereof. Background technique [0002] The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art. [0003] With the development of science and technology and the continuous improvement of people's living standards, high-resolution, large-size flat-panel displays, solar cells, energy-saving infrared reflective films, electrochromic windows, etc. are widely used, and the demand for transparent conductive films is increasing. The transparent conductive film not only requires good conductivity, but also has excellent visible light transmittance. From the perspective of physics, the light transmission and conductivity of matter are a pair of basic contradictions. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224H01L31/0445C23C14/08C23C14/18C23C14/34C23C14/00
CPCH01L31/022425H01L31/022466H01L31/0445C23C14/083C23C14/0036C23C14/185C23C14/3464Y02E10/50
Inventor 宋安刚霍方方朱地胡俊华
Owner ENERGY RES INST OF SHANDONG ACAD OF SCI