Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of stannic oxide sol, stannic oxide planar structure perovskite photovoltaic cell without annealing effect and preparation method of stannic oxide planar structure perovskite photovoltaic cell

A technology of tin dioxide and annealing effect, used in tin oxide, photovoltaic power generation, circuits, etc., can solve the problems of easy cracking and poor performance, and achieve the effects of cost reduction, good stability and high performance

Active Publication Date: 2021-06-18
WUHAN UNIV +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, dense layers of tin dioxide usually deteriorate after high-temperature processes, which is also known as the "annealing effect" (J.Mater.Chem.A 2015,3,24163)
[0003] SnCl for existing research 2 However, the dense layer of nano-tin dioxide still has obvious annealing effect, and it is easy to crack at high temperature.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of stannic oxide sol, stannic oxide planar structure perovskite photovoltaic cell without annealing effect and preparation method of stannic oxide planar structure perovskite photovoltaic cell
  • Preparation method of stannic oxide sol, stannic oxide planar structure perovskite photovoltaic cell without annealing effect and preparation method of stannic oxide planar structure perovskite photovoltaic cell
  • Preparation method of stannic oxide sol, stannic oxide planar structure perovskite photovoltaic cell without annealing effect and preparation method of stannic oxide planar structure perovskite photovoltaic cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0051] The preparation method of tin dioxide sol of the present invention comprises: SnC 2 o 4 、C 2 h 2 o 4 , ethanol and water are mixed to form a suspension, and stirred for 1 to 3 days to obtain tin dioxide sol.

[0052] Due to SnC 2 o 4 It is insoluble in water and ethanol, so it needs to be stirred to make SnC 2 o 4 Will not settle and remain in suspension. And stirring is also conducive to the full contact between various substances, the sol formed under stirring is more uniform, has better performance, and is conducive to the smooth progress of subsequent reactions.

[0053] Specifically, according to the formation of tin dioxide sol, the reaction time of 1 to 3 days is the most suitable range value selected by comprehensive factors, and the tin dioxide obtained by selecting any reaction time between 1 and 3 days The sol quality is basically the same.

[0054] In some embodiments, the SnC 2 o 4 、C 2 h 2 o 4 , the mass volume ratio of ethanol and water is ...

Embodiment 1

[0090] Example 1 Preparation of tin dioxide planar structure perovskite photovoltaic cells without annealing effect

[0091] The preparation steps of the tin dioxide planar structure perovskite photovoltaic cell without annealing effect include:

[0092] (1) Cleaning: Clean the FTO conductive glass of appropriate size with ordinary detergent, and then rinse it with deionized water; then use deionized water, acetone, and ethanol to clean it ultrasonically, and finally dry it with nitrogen for later use.

[0093] (2) 0.67 g of SnC 2 o 4 , 1 g C 2 h 2 o 4 , 20mL ethanol and 3mL water suspension were mixed and stirred for 3 days to obtain fresh transparent tin dioxide sol; the tin dioxide sol was evenly spin-coated (rotating speed 1500rmp, time 30s) on a transparent conductive substrate with a homogenizer Above; anneal the conductive substrate with spin-coated tin dioxide sol layer at 200 degrees Celsius for 60 minutes.

[0094] (3) FAPbI modified by MAC1 3 Preparation of p...

Embodiment 2

[0103] Example 2 Preparation of tin dioxide planar structure perovskite photovoltaic cells without annealing effect

[0104] The preparation steps of the tin dioxide planar structure perovskite photovoltaic cell without annealing effect include:

[0105] (1) cleaning: with embodiment one.

[0106] (2) Preparation of tin dioxide dense layer: except that the annealing temperature was changed to 300 degrees Celsius, other operations were the same as in Example 1.

[0107] (3) FAPbI modified by MAC1 3 Preparation of the perovskite light-absorbing layer: the same as in Example 1.

[0108] (4) Preparation of hole transport layer: same as Example 1.

[0109] (5) Electrode preparation: same as Example 1.

[0110] Test: with embodiment one.

[0111] see Figure 5 , the obtained photoelectric conversion efficiency parameters are, open circuit voltage 1.152V, short circuit current density 23.71mA / cm 2 , fill factor 76.89%, conversion efficiency 21.00%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
conversion efficiencyaaaaaaaaaa
conversion efficiencyaaaaaaaaaa
conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of optoelectronic materials and devices, and particularly relates to a preparation method of tin dioxide sol, which comprises the following step of: stirring a suspension formed by SnC2O4, C2H2O4, ethanol and water for 1-3 days to obtain the tin dioxide sol. The invention further provides a tin dioxide planar structure perovskite photovoltaic cell without an annealing effect. The tin dioxide planar structure perovskite photovoltaic cell comprises a substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and electrodes. The preparation method of the photovoltaic cell comprises the following steps of: preparing a tin dioxide compact layer on a substrate; preparing a light absorption layer on the tin dioxide compact layer; and preparing a hole transport layer on the light absorption layer. A quantum dot stannic oxide colloid is prepared through a SnC2O4-water-ethanol reaction system, the quantum dot stannic oxide colloid can be used for preparing a stannic oxide compact layer without an annealing effect, the quantum dot stannic oxide colloid can adapt to a low-temperature preparation process and can also be applied to a high-temperature preparation process, the compact layer formed by the stannic oxide colloid does not have an annealing effect, and the problem that the performance of the perovskite cell is reduced due to high-temperature annealing is solved.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, in particular to a tin dioxide (chemical formula: SnO 2 ) sol preparation method, tin dioxide without annealing effect (chemical formula: SnO 2 ) planar structure perovskite photovoltaic cell and its preparation method. Background technique [0002] In 2009, Japanese scientist Miyasaka et al. developed perovskite solar cells on the basis of dye-sensitized solar cells (Nat. Photonics, 2008, 2, 284). Since then, perovskite solar cells have developed rapidly, and within ten years, the efficiency has soared from the initial 3.8% to the current record efficiency of 25.5%, showing its attractive development prospects in the photovoltaic field. Currently, high temperature process TiO 2 Mesoscopic perovskite cells have higher efficiencies than other metal oxide perovskite cells. However, TiO 2 Mesoscopic perovskite cells still have some unresolved issues, one of which is their ins...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02H01L51/42H01L51/44H01L51/46H01L51/48
CPCC01G19/02H10K71/00H10K30/00H10K30/80H10K2102/00H10K2102/102Y02E10/549
Inventor 方国家熊良斌李佳帅叶飞鸿王海兵
Owner WUHAN UNIV