Manufacturing method of mask base version of phase-shift reversed membrane
A manufacturing method and phase-shifting technology, which are applied in the photoengraving process of the pattern surface, the originals used for photomechanical processing, the instruments, etc., can solve the problems of poor sputtering uniformity and increase of particles, avoid abnormal discharge, improve The effect of manufacturing yield
Pending Publication Date: 2021-06-18
SHANGHAI CHUANXIN SEMICON CO LTD
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Problems solved by technology
[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for manufacturing a phase shift inversion film mask substrate, which is used to solve the problem of poor sputtering uniformity and abnormal discharge in the prior art. additional questions
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[0035] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0036] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...
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Abstract
The invention provides a manufacturing method of a mask base version of a phase-shift reversed membrane. The manufacturing method comprises the following steps: providing a transparent substrate; depositing a phase-shift reversed membrane on the transparent substrate; depositing a light-shading membrane on the phase-shift reversed membrane; depositing an anti-reflection membrane on the light-shading membrane; and depositing the phase-shift reversed membrane, the light-shading membrane and the anti-reflection membrane through a sputtering deposition technology and commonly attacking targets by using argon gas and helium gas by adopting the sputtering deposition technology so as to realize deposition of the phase-shift reversed membrane, the light-shading membrane and the anti-reflection membrane. According to the manufacturing method disclosed by the invention, the deposition volume of molybdenum, silicon and chromium can be controlled finely and the particle number of sputtered targets can be controlled, so that the thickness uniformity of the phase-shift reversed membrane, the light-shading membrane and the anti-reflection membrane can be greatly improved, and meanwhile, the degree of transparency of the phase-shift reversed membrane can be adjusted and 180-degree phase shift change can be produced.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a method for manufacturing a phase shift inversion film mask substrate. Background technique [0002] In order to form fine circuit patterns in the manufacturing process of semiconductors and flat panel displays, photomasks and photolithography are usually used to form master molds. The photomask plate forms fine circuit patterns on the mask base plate. The mask base plate is manufactured by forming a multi-layer chromium thin film on a quartz substrate and coating a photoresist on the multi-layer chromium film to form a mask base plate. In recent years, with the high integration of semiconductor integrated circuits and the miniaturization of design, the pattern-forming photomask route also tends to be high-precision and refined. [0003] In order to form a finer pattern in a semiconductor integrated circuit, a high pattern resolution is required, and the resolution c...
Claims
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IPC IPC(8): C23C14/04C23C14/06C23C14/34G03F1/26
CPCC23C14/042C23C14/3464C23C14/0676C23C14/0641C23C14/0036G03F1/26
Inventor 车翰宣
Owner SHANGHAI CHUANXIN SEMICON CO LTD