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Plasmon resonance enhanced substrate and preparation method and application thereof

A plasmon resonance and substrate technology, applied in the field of infrared spectroelectrochemistry, can solve problems such as difficulties, achieve the effects of low cost, high sensitivity infrared spectrum detection, and expand the scope of application

Active Publication Date: 2021-06-18
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, limited by the above-mentioned design difficulties, there is no infrared spectroelectrochemical substrate capable of achieving higher signal enhancement in the prior art.

Method used

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  • Plasmon resonance enhanced substrate and preparation method and application thereof
  • Plasmon resonance enhanced substrate and preparation method and application thereof
  • Plasmon resonance enhanced substrate and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041](1) Preparation of single-layer graphene+silicon-silicon dioxide wafer: use chemical vapor deposition to prepare single-layer graphene on a copper substrate (growth gas flow: CH 4 :H 2 =10sccm:50sccm; growth temperature: 1050° C.), and then irradiating the back of the copper substrate with UV / ozone for 45 minutes to remove the inferior graphene on the back of the substrate. Spin-coat polymethyl methacrylate on the front of the copper substrate, and place it on a 100°C electric heating plate to dry for 30 minutes. After drying, put into the etchant (Cu 2 SO 4 :HCl:H 2 (0=20g:100mL:100mL) is etched, and a new etching solution is replaced every 20min. After the third time, the etching solution is left to stand for 12 hours, and the copper is fully etched to obtain polymethyl methacrylate-graphene. . The PMMA-graphene was thoroughly washed with deionized water before being transferred to the surface of a silicon-silica optical wafer. Finally, the polymethyl methacrylat...

Embodiment 2

[0047] The preparation method of this example is the same as that of Example 1, wherein the size of the polystyrene microspheres is 4.25 μm. Fix the silicon-silicon dioxide chip coated with 50nm gold on the surface on the reflection attachment of the infrared instrument, and adjust the optical path externally so that the incident light irradiates the silicon chip coated with 50nm gold on the surface at a fixed angle, and enters the detection after reflection instrument to collect the background spectrum.

[0048] Replace the silicon-silicon dioxide chip coated with 50nm gold on the surface with a plasmon resonance enhanced substrate with an antenna array on the surface, add 0.1M NaF solution, and then use gold / graphene as the working electrode and platinum wire as the counter electrode , the mercury / mercurous sulfate electrode is used as the reference electrode, and the sample spectrum is collected by changing the potential, and the results are shown in the attached Figure 4...

Embodiment 3

[0050] The preparation method of this example is the same as that of Example 1, wherein the size of the polystyrene microspheres is 4.25 μm. Add 0.5M K on the substrate surface 2 SO 4 solution and 5mM K 3 Fe(CN) 6 Solution, using gold / graphene as the working electrode, platinum wire as the counter electrode, mercury / mercurous sulfate electrode as the reference electrode, and cyclic voltammetry scanning in the range of 0.4V to -0.6V at a scan rate of 10mV / s, as attached Figure 5 It is shown that the prepared substrate can effectively realize the electrochemical redox reaction of potassium ferricyanide. Subsequently, the plasmon resonance enhanced substrate was fixed on the reflective attachment of the infrared instrument, and the optical path was adjusted externally, so that the incident light irradiated the silicon wafer coated with gold with a thickness of 50nm at a fixed angle, and entered the detector after reflection. Add 0.5M K on the substrate surface 2 SO 4 Solu...

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Abstract

The invention relates to a plasmon resonance enhanced substrate, which comprises a metal nanostructure array, and the metal nanostructure array is deposited on the surface of an optical wafer covered by single-layer graphene. The method comprises the following steps: self-assembling microspheres on a gas / liquid interface in a container, then depositing the microspheres on the surface of an optical wafer covered with single-layer graphene, and then depositing metal on the surface of the optical wafer to obtain a large-area highly regular and ordered metal nanostructure array. The enhanced substrate prepared based on the scheme can realize infrared spectrum electrochemical analysis through plasmon resonance excitation of the enhanced substrate in a middle infrared region, and the detection sensitivity can reach a monomolecular layer magnitude, so that the enhanced substrate can be used as a novel substrate for infrared spectrum electrochemical detection.

Description

technical field [0001] The invention relates to a plasmon resonance enhanced substrate and its preparation method and application, which can be used for infrared spectroelectrochemical detection and belongs to the field of infrared spectroelectrochemical. Background technique [0002] Infrared spectroscopy is a broad-spectrum absorption spectrum. After infrared light of different wavelengths irradiates molecules, only the light with the same frequency as the molecular intrinsic dipole moment change will be absorbed, and the vibrational energy level transition will be realized to form the infrared absorption spectrum of the molecule. Therefore, infrared spectroscopy has strong chemical bond specificity, also known as "fingerprint spectroscopy", which can be used to identify the functional groups and structures of molecules. Coupling infrared spectroscopy and electrochemistry can realize the external field control of interface and bulk phase molecules under the applied potenti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/35G01N21/552G01N21/01G01N27/26B82Y15/00B82Y40/00
CPCG01N21/35G01N21/554G01N21/01G01N27/26B82Y15/00B82Y40/00Y02P70/50
Inventor 夏兴华李剑李今
Owner NANJING UNIV