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A narrow-band b-zone ultraviolet long-lasting luminescent material and its preparation method and application

A luminescent material and narrow-band technology, which is applied in the field of narrow-band B-zone ultraviolet long-lasting luminescent material and its preparation, can solve the problems of insufficient intensity and short afterglow time, and achieve the effects of good crystallization performance, low equipment requirements, and no by-products

Active Publication Date: 2022-03-01
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem of short afterglow time or insufficient intensity of the ultraviolet long-lasting luminescent material in the narrow-band UVB region and the need for a specific light source for excitation in the prior art, the present invention proposes a narrow-band B-region ultraviolet long-lasting luminescent material and its preparation method and applications, the narrow-band B-region ultraviolet long-lasting luminescent material can be efficiently excited by sunlight, the main emission area is located in the narrow-band ultraviolet region of 308-320nm, the luminous peak is located at 313nm, and the ultraviolet afterglow luminescence time is greater than 24 hours after being excited by sunlight

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  • A narrow-band b-zone ultraviolet long-lasting luminescent material and its preparation method and application
  • A narrow-band b-zone ultraviolet long-lasting luminescent material and its preparation method and application
  • A narrow-band b-zone ultraviolet long-lasting luminescent material and its preparation method and application

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preparation example Construction

[0037] In the second aspect of the present invention, the present invention proposes a preparation method of a narrow-band B-region ultraviolet long-lasting luminescent material, which includes: mixing the material and a flux, first performing low-temperature pre-calcination, and then performing high-temperature sintering to obtain a narrow-band B-region ultraviolet long-lasting luminescent material. Afterglow luminescent material; said material includes Y-containing compound, Gd-containing compound, Ga-containing compound and Bi-containing compound.

[0038] Low-temperature pre-calcination can effectively remove volatile components in raw materials, such as surface-adsorbed moisture or CO produced by carbonate decomposition 2 , so as to obtain ceramic powder with high sintering activity and uniform and stable composition. Therefore, the combination of low temperature sintering and high temperature sintering can reduce the shrinkage of the material and effectively improve the ...

Embodiment 1

[0058] According to the following ingredients: narrow-band B-zone ultraviolet long-lasting luminescent material Y 2.497 Gd 0.5 Ga 5 o 12 :0.3% Bi 3+ , with Y 2.495 Gd 0.5 Ga 5 o 12 is the host, and the dopant ion is Bi 3+ Ions, where Bi 3+ The doping amount is 0.3mol%. Accurately weigh yttrium oxide (Y 2 o 3 ) 0.7048g, gadolinium oxide (Gd 2 o 3 )0.2266g, gallium oxide (Ga 2 o 3 ) 1.1715g, bismuth oxide (Bi 2 o 3 ) 0.0017g. Grind the above raw materials in an agate mortar for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire them at 900°C for 2 hours. After the calcined powder is reground, use a powder tablet press to press about 1 g of the powder into a disc with a diameter of about 15 mm and a thickness of about 1 mm. Finally, the formed wafer was sintered at 1500°C for 4 hours to obtain the solar-excitable Y 2.497 Gd 0.5 Ga 5 o 12 :0.3% Bi 3+ Narrow-band B-region ultraviolet long afterglow lumines...

Embodiment 2

[0071] According to the following ingredients: narrow-band B-zone ultraviolet long-lasting luminescent material Y 2.895 Gd 0.1 Ga 5 o 12 :0.5% Bi 3+ , with Y 2.895 Gd 0.1 Ga 5 o 12 is the host, and the dopant ion is Bi 3+ Ions, where Bi 3+ The doping amount is 0.5mol%. Accurately weigh yttrium oxide (Y 2 o 3 ) 0.8171g, gadolinium oxide (Gd 2 o 3 ) 0.0453g, gallium oxide (Ga 2 o 3 ) 1.1715g, bismuth oxide (Bi 2 o 3 ) 0.0029g. Grind the above raw materials in an agate mortar for about 1 hour, mix the raw materials thoroughly, then transfer them to a corundum crucible, and pre-fire at 850°C for 3 hours. After the calcined powder is reground, use a powder tablet press to press about 1 g of the powder into a disc with a diameter of about 15 mm and a thickness of about 1 mm. Finally, the shaped wafer was sintered at 1550°C for 6 hours to obtain the solar-excitable Y 2.895 Gd 0.1 Ga 5 o 12 :0.5% Bi 3+ Narrow-band B-region ultraviolet long afterglow luminescent...

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Abstract

The invention belongs to the technical field of long-lasting luminescent materials, and relates to a narrow-band B-zone ultraviolet long-lasting luminescent material and a preparation method and application thereof. Narrow-band B-zone UV long afterglow luminescent materials include: Y 3‑x‑y Gd x Ga 5 o 12 :yBi 3+ , where 0<x≤1, 0<y≤30%, y is Bi 3+ Occupy Y 3‑x‑y Gd x Ga 5 o 12 The mole percentage. The material prepared by the present invention can produce narrow-band B-zone ultraviolet long afterglow luminescence after short-term irradiation of sunlight under various environmental conditions (sunny, snowy, cloudy, cloudy, etc.), the luminous peak is at 313nm, and the afterglow luminescence lasts The time is greater than 24 hours. The sunlight-excitable narrow-band B-region ultraviolet long-lasting luminescent material has good application prospects in the fields of indoor optical marking, skin disease phototherapy, optical information storage, and photocatalysis.

Description

technical field [0001] The invention belongs to the technical field of long-lasting luminescent materials, and relates to a narrow-band B-zone ultraviolet long-lasting luminescent material and a preparation method and application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] B-zone ultraviolet light (UVB, 280-320nm) has been widely used in phototherapy for common skin diseases such as psoriasis and vitiligo. Phototherapy using UVB ultraviolet light is usually called UVB phototherapy, which can be divided into broadband UVB (280-320) phototherapy and narrow-band UVB (310-313) phototherapy. Current research has confirmed that narrow-band UVB ultraviolet light aro...

Claims

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Application Information

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IPC IPC(8): C09K11/80G01N21/63G01N23/20
CPCC09K11/7769G01N23/20G01N21/63
Inventor 梁延杰刘景伟闫劭
Owner SHANDONG UNIV
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