Nitrogen-doped phosphorene quantum dot and preparation method thereof

A nitrogen-doped, quantum dot technology, applied in the field of phosphorene quantum dots, can solve the problems of easy agglomeration and difficult dispersion of materials, and achieve the effects of easy dispersion, high water solubility, and avoidance of agglomeration

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a nitrogen-doped phosphorene quantum dot and its prep

Method used

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  • Nitrogen-doped phosphorene quantum dot and preparation method thereof

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Embodiment 1

[0039] (1) Preparation of nitrogen-doped black phosphorus material:

[0040] Blend 10g of red phosphorus, 2g of dicyandiamide, and 1g of tin iodide evenly, place them in a tubular muffle furnace, pass in argon as a protective gas, and increase the temperature of the furnace body at a heating rate of 1.5°C / min. Raised to 600 ° C, and constant temperature reaction for 3h. Then, the heating is stopped, and the furnace body is naturally lowered to room temperature, and the reaction product nitrogen-doped black phosphorus material is taken out.

[0041] (2) Preparation of nitrogen-doped phosphorene quantum dot materials:

[0042] Grind the nitrogen-doped black phosphorus material prepared in (1), and screen the powder with a particle size of 200 mesh, weigh 1g and place it in a 200mL beaker, add 100mL N-methylpyrrolidone as the dispersion medium, 0.1 g of europium trifluoromethanesulfonate was used as a stabilizer to obtain a mixed solution. The mixed solution was placed in an u...

Embodiment 2

[0046] (1) Preparation of nitrogen-doped black phosphorus material:

[0047] Blend 10g of red phosphorus, 2g of melamine, and 1g of tin iodide evenly, place them in a tubular muffle furnace, pass in argon as a protective gas, and raise the temperature of the furnace body at a heating rate of 1.5°C / min to 600°C, and keep the temperature constant for 3h. Then, the heating is stopped, and the furnace body is naturally lowered to room temperature, and the reaction product nitrogen-doped black phosphorus material is taken out.

[0048] (2) Preparation of nitrogen-doped phosphorene quantum dot materials:

[0049] Grind the nitrogen-doped black phosphorus material prepared in (1), and screen the powder with a particle size of 200 mesh, weigh 1g and place it in a 200mL beaker, add 100mL N-methylpyrrolidone as the dispersion medium, 0.1 g of europium trifluoromethanesulfonate was used as a stabilizer to obtain a mixed solution. The mixed solution was placed in an ultrasonic disperse...

Embodiment 3

[0053] (1) Preparation of nitrogen-doped black phosphorus material:

[0054] Blend 10g of red phosphorus, 2g of dicyandiamide, and 1g of tin iodide evenly, place them in a tubular muffle furnace, pass in argon as a protective gas, and increase the temperature of the furnace body at a heating rate of 1.5°C / min. Rise to 600 ° C, and keep the temperature for 3h. Then, the heating is stopped, and the furnace body is naturally lowered to room temperature, and the reaction product nitrogen-doped black phosphorus material is taken out.

[0055] (2) Preparation of nitrogen-doped phosphorene quantum dot materials:

[0056] Grind the nitrogen-doped black phosphorus material prepared in (1), and screen the powder with a particle size of 200 mesh, weigh 1g and place it in a 200mL beaker, add 100mL N-cyclohexylpyrrolidone in turn as the dispersion medium, 0.1 g of europium trifluoromethanesulfonate was used as a stabilizer to obtain a mixed solution. The mixed solution was placed in an ...

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Abstract

The invention discloses a nitrogen-doped phosphorene quantum dot and a preparation method thereof. The preparation method comprises the steps that red phosphorus, a cyanamide compound and a catalyst are mixed and heated, and a nitrogen-doped black phosphorus material is generated through a reaction; the nitrogen-doped black phosphorus material is ground into powder, a dispersion medium and sulfonate containing trivalent rare earth elements are added, and ultrasonic treatment is carried out to obtain an ultrasonic dispersion liquid; the ultrasonic dispersion liquid is centrifuged, and the nitrogen-doped phosphorene quantum dots are prepared. According to the nitrogen-doped phosphorene quantum dot, the nitride with the layered structure is doped in the black phosphorus material, so that the prepared nitrogen-doped phosphorene quantum dot has relatively high polarity, nitrogen atoms in the nitrogen-doped phosphorene quantum dot can generate hydrogen bond interaction with hydrogen atoms in water, and the nitrogen-doped quantum dot has relatively high water solubility compared with the phosphorene quantum dot; therefore, agglomeration of the nitrogen-doped phosphorene quantum dots in a water solvent can be effectively avoided, and the nitrogen-doped phosphorene quantum dots are easy to disperse after being dried.

Description

technical field [0001] The invention relates to the field of phosphorene quantum dots, in particular to a nitrogen-doped phosphorene quantum dot and a preparation method thereof. Background technique [0002] Phosphorene is a two-dimensional structural material composed of a single layer or multiple layers of phosphorus atoms, and its electron mobility is as high as 1000 cm 2 / V.s is a new two-dimensional semiconductor material after graphene and molybdenum disulfide. The excellent electrical properties of phosphorene show its great application prospects in electrochemical devices and photoelectric conversion devices. [0003] Quantum dots refer to nanoparticles with a particle size between 1 and 10nm. Due to their own quantum confinement effect and quantum dot size effect, quantum dot materials exhibit better photoelectric properties than two-dimensional materials. Phosphene quantum dot materials are quantum-confined electrons and holes, and its continuous energy band str...

Claims

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Application Information

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IPC IPC(8): C09K11/70B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/70B82Y20/00B82Y30/00B82Y40/00
Inventor 丘洁龙
Owner TCL CORPORATION
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