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Semiconductor negative electrode material and preparation method thereof

A negative electrode material and semiconductor technology, applied in the field of new energy material development, can solve the problems of low electronic conductivity, low titanate ion conductivity, low stacking density, etc., and achieve simple preparation method, excellent cycle performance and rate performance, The effect of high specific capacity

Active Publication Date: 2021-08-03
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a semiconductor negative electrode material and its preparation method to solve the problems of low ion conductivity, low electronic conductivity and low packing density of existing titanate

Method used

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  • Semiconductor negative electrode material and preparation method thereof
  • Semiconductor negative electrode material and preparation method thereof
  • Semiconductor negative electrode material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] (1) the urea weighing 1.8g is dissolved in the ethylene glycol (EG) solution of 60ml;

[0067] (2) 0.01mol antimony trichloride is dissolved in the above (1) solution;

[0068] (3) Slowly add 0.01 mol of tetrabutyl titanate dropwise to the above mixed solution, and stir for 2 hours at a speed of 600r / min, the color of the solution has no obvious change;

[0069] (4) Transfer the transparent solution obtained above into a polytetrafluoroethylene reactor, seal it with a stainless steel autoclave, and carry out a solvothermal reaction at 160° C. for 8 hours;

[0070] (5) After the reaction is over, take out the reactant and wash it with ethanol to obtain a white object, which is dried in a blast drying oven at 60°C to obtain a titanium glycol material with a super-large rod-shaped structure;

[0071] (6) Anneal the titanium glycol material in (5) above under the protection of argon, the annealing temperature is 400°C, and the annealing time is 10h;

[0072] (7) Lithium a...

Embodiment 2

[0079] (1) the urea weighing 1.8g is dissolved in the ethylene glycol (EG) solution of 30ml;

[0080] (2) 0.005mol antimony acetate is dissolved in the above-mentioned (1) solution;

[0081] (3) Slowly add 0.01 mol of tetrabutyl titanate dropwise to the above mixed solution, and stir for 2 hours at a speed of 600r / min, the color of the solution has no obvious change;

[0082] (4) Transfer the transparent solution obtained above into a polytetrafluoroethylene reaction kettle, seal it with a stainless steel autoclave, and carry out a solvothermal reaction at 120° C. for 15 hours;

[0083] (5) After the reaction is over, take out the reactant and wash it with ethanol to obtain a white object, which is dried in a blast drying oven at 60°C to obtain a titanium glycol material with a super-large rod-shaped structure;

[0084] (6) Anneal the titanium glycol material in (5) above under the protection of argon, the annealing temperature is 500°C, and the annealing time is 8h;

[0085...

Embodiment 3

[0089] (1) the urea weighing 1.8g is dissolved in the ethylene glycol (EG) solution of 60ml;

[0090] (2) 0.005mol antimony trichloride is dissolved in the above-mentioned (1) solution;

[0091] (3) Slowly add 0.01 mol of tetrabutyl titanate dropwise to the above mixed solution, and stir for 2 hours at a speed of 600r / min, the color of the solution has no obvious change;

[0092] (4) Transfer the transparent solution obtained above into a polytetrafluoroethylene reactor, seal it with a stainless steel autoclave, and carry out a solvothermal reaction at 170° C. for 8 hours;

[0093] (5) After the reaction is over, take out the reactant and wash it with ethanol to obtain a white object, which is dried in a blast drying oven at 60°C to obtain a titanium glycol material with a super-large rod-shaped structure;

[0094] (6) Anneal the titanium glycol material in (5) above under the protection of argon, the annealing temperature is 600°C, and the annealing time is 6h;

[0095] (7)...

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Abstract

The invention discloses a semiconductor negative electrode material and a preparation method thereof. The semiconductor negative electrode material is a carbon-coated titanate semiconductor negative electrode material and is of a solid rod-shaped structure, wherein the length of the rod-shaped structure is 10-100 microns, and the diameter of the rod-shaped structure is 2-10 microns; the preparation method of the semiconductor negative electrode material comprises the following steps: S1, preparing a titanium ethylene glycol precursor: preparing the titanium ethylene glycol precursor by utilizing a solvothermal reaction to obtain a titanium source material; S2, preparing the carbon-coated titanate semiconductor negative electrode material: annealing the titanium source material in the step S1 to obtain a carbon-coated titanium oxide microrod, mixing the carbon-coated titanium oxide microrod with a lithium salt, a sodium salt or a potassium salt in a micro-aqueous solution, and annealing a freeze-dried product in argon to obtain the oversized rod-shaped carbon-coated titanate semiconductor negative electrode material. The semiconductor negative electrode material is of a solid rod-shaped structure, and in the preparation method, the synthesis process is simple and convenient, batch preparation can be achieved, and the semiconductor negative electrode material can be applied to lithium ion batteries, sodium ion batteries and potassium ion batteries.

Description

technical field [0001] The invention relates to the field of new energy material development, in particular to a semiconductor negative electrode material and a preparation method thereof. Background technique [0002] With the development of large-capacity energy storage equipment and power lithium / sodium / potassium ion batteries, the market has put forward higher and stricter requirements for high-performance anode materials. Lithium / sodium / potassium ion battery is a very promising chemical power source, which has broad prospects in the field of large energy storage devices such as new energy storage and power grid peak shaving that do not require high energy density and volume. In order to develop secondary batteries with excellent performance, it is crucial to develop electrode materials with high energy density. [0003] At present, most of the lithium / sodium ion batteries use carbon materials as the negative electrode materials of lithium / sodium ion batteries, but ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/62H01M4/485H01M10/0525H01M10/054
CPCH01M4/485H01M4/625H01M10/0525H01M10/054H01M2004/027H01M2004/021Y02E60/10
Inventor 黄镇东张佩蔡宇晴张婷柏玲马延文
Owner NANJING UNIV OF POSTS & TELECOMM
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