Method for preparing nano-structure transition metal nitride thin film by using plasma

Abstract

According to the method for preparing the nano-structure transition metal nitride thin film by using the plasma, plasma equipment is adopted as a preparation device, and the preparation process comprises five steps. According to the invention, nitrogen replaces ammonia gas or toxic nitrogen-containing organic matter to be used as a nitrogen source, so that the method is more economical and environment-friendly, and the danger of explosion caused by the use of ammonia gas is avoided; preparation is carried out under a closed vacuum condition, so that waste of a large volume of nitrogen is avoided, and the reaction process is cleaner; a transition metal elementary substance is used as a raw material, a nanostructure and a nitride layer are generated in situ on the surface of the transition metal elementary substance, the steps are simple, and more importantly, the property of the obtained nitride thin film is more stable; the plasma is used for bombarding the metal surface to implement formation of the nanostructure and synthesis of the nitride layer, the reaction is rapid (time is shorter than one hour), and external heating is not needed, so that waste of a large amount of electric energy is avoided. The nano nitride thin film layer synthesized by the method is adjustable in size, uniform in component transition, and tighter in substrate-nitride layer combination, so that the application value is high.

Description

technical field [0001] The invention relates to the technical field of a nitride film preparation method, in particular to a method for preparing a nanostructure transition metal nitride film by using plasma. Background technique [0002] Nanomaterials are widely considered to have rich application potential in catalysis, semiconductors, integrated circuits, and electrochemistry due to their high surface-to-volume ratios. At present, transition metal nitride materials based on nanostructures (such as nitride thin films) are mainly used for further experimental research (such as superconductivity and catalytic performance). In the prior art, methods for preparing transition metal nitride raw materials based on nanostructures include chemical vapor deposition and physical vapor deposition. Due to technical limitations, the chemical vapor deposition method has the disadvantages that the process is relatively complex, and the differences in the deposition potential and depositi...

AI Technical Summary

Problems solved by technology

Due to technical limitations, the chemical vapor deposition method has the disadvantages that the process is relatively complex, and the differences in the deposition potential and deposition characteristics of each metal ion make it difficult to uniformly co-deposit multi-element alloys.

In the physical vapor deposition method, the laser pulse deposition process parameters are controllable, the preparation environment is high in purity, and the efficiency is high, but it has the disadvantages of high equipment prices and is not suitable for engineering batch preparation

[0003] In addition, in the preparation of the existing physical vapor precipitation method, the transition metal element or its precursor will first be kept at high temperature through ammonia gas or volatile nitrogen-containing gas or azide (such as nitric oxide, sodium azide, etc.) , Lithium azide is mostly poisonous) Nitriding, during this process, it needs to be kept in a high temperature state for dozens of hours, and the consumption of ammonia is very large; it is more important to note that if the ammonia gas Risk of explosion if leaked

Finally, the metal nitride powder with a nanostructure prepared in this way is attached to the substrate material to obtain a nitride film through steps such as physical spin coating and simple baking. The film material obtained in this way is often poor in stability. Prone to cracking and falling off during subsequent application

In summary, the existing preparation of transition metal nitride materials based on nanostructures still has relatively large technical defects, and it is particularly necessary to provide an effective method for synthesizing stable nanostructure transition metal nitride materials.

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