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A kind of tin sulfide/tin disulfide heterojunction material and preparation method thereof

A technology of tin disulfide and tin sulfide, which is used in metal material coating process, gaseous chemical plating, coating and other directions, can solve the pollution of heterojunction surface interface, the easy existence of defects in the heterointerface, and the low quality of heterocrystalline body and other problems, to achieve the effect of simple preparation process, high repeatability and high uniformity

Active Publication Date: 2022-08-02
CHINA JILIANG UNIV
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  • Application Information

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Problems solved by technology

Among them, the mechanical exfoliation transfer method is to first combine SnS and SnS 2 It is peeled off from the single crystal sample, and then stacked to form a heterojunction by wet or dry transfer. lower
The hydrothermal synthesis method is based on the solution-based self-assembly, template-assisted growth and heat treatment process, which is suitable for the preparation of large quantities of nanomaterials, but the size of the obtained heterojunction materials is small and the morphology and structure are difficult to control; in addition, the external Attachment of impurities etc. between the interfaces will seriously degrade the performance and stability of the heterojunction
Step-by-step chemical vapor deposition (CVD) is based on the CVD method that grows SnS and SnS step-by-step 2 materials; in the growth process, the first material is usually used as the substrate, and other materials are epitaxially grown on its side or vertical direction; this method is conducive to the preparation of large-area heterojunctions, but the growth process is difficult to control. It is easy to cause the appearance of single crystals and mixed crystals; at the same time, the heterogeneous interface prepared by the step-by-step CVD method is prone to defects, resulting in low quality heterogeneous crystals

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  • A kind of tin sulfide/tin disulfide heterojunction material and preparation method thereof
  • A kind of tin sulfide/tin disulfide heterojunction material and preparation method thereof
  • A kind of tin sulfide/tin disulfide heterojunction material and preparation method thereof

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preparation example Construction

[0026] A one-dimensional tin sulfide / two-dimensional tin disulfide heterojunction and a preparation method thereof, comprising the following steps:

[0027] Step 1: Wipe clean the three-temperature zone CVD tube furnace with absolute ethanol, anneal at 600°C for 10 minutes, and rinse with 500sccm of high-purity argon during annealing;

[0028] Step 2: Weigh 150mg sulfur powder (S) and 50mg tin sulfide powder (SnS) respectively in the quartz boat; The quartz boat containing S powder is placed in the first temperature zone in the three-temperature zone CVD tube furnace, and the The quartz boat with SnS powder is placed in the second temperature zone; at the same time, the freshly peeled fluorophlogopite substrate is placed in the downstream direction of the SnS powder, and the distance between the two is 6 cm;

[0029] Step 3: Evacuate the CVD tube furnace, first turn on the mechanical pump to reduce the pressure in the furnace to 5Pa, then turn on the molecular pump to pump bel...

Embodiment 1

[0034]Wipe clean the three-temperature zone CVD tube furnace with absolute ethanol, and anneal it at a high temperature of 600 °C for 10 min. During the annealing period, rinse it with 500 sccm of high-purity argon; weigh 150 mg of S powder and 50 mg of SnS powder, respectively, and put them in the quartz boat; The quartz boat loaded with S powder was placed in the first temperature zone in the three-temperature zone CVD tube furnace, the quartz boat loaded with SnS powder was placed in the second temperature zone, and the freshly peeled fluorophlogopite substrate was placed in the furnace. In the CVD tube furnace, it is located 6cm downstream of the SnS powder; after checking the air tightness of the CVD tube furnace, the CVD tube furnace is pumped, first turn on the mechanical pump to reduce the air pressure to 5Pa, and then turn on the molecular pump to pump to Below 2Pa; then use 500sccm high-purity argon to rapidly inflate the CVD tube furnace to standard atmospheric press...

Embodiment 2

[0037] Wipe clean the three-temperature zone CVD tube furnace with absolute ethanol, and anneal it at a high temperature of 600 °C for 10 min. During the annealing period, rinse it with 500 sccm of high-purity argon; weigh 150 mg of S powder and 50 mg of SnS powder, respectively, and put them in the quartz boat; The quartz boat loaded with S powder was placed in the first temperature zone in the three-temperature zone CVD tube furnace, the quartz boat loaded with SnS powder was placed in the second temperature zone, and the freshly peeled fluorophlogopite substrate was placed in the furnace. In the CVD tube furnace, it is located 6cm downstream of the SnS powder; after checking the air tightness of the CVD tube furnace, the CVD tube furnace is pumped, first turn on the mechanical pump to reduce the air pressure to 5Pa, and then turn on the molecular pump to pump to Below 2Pa; then use 500sccm high-purity argon to rapidly inflate the CVD tube furnace to standard atmospheric pres...

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Abstract

The invention discloses a tin sulfide / tin disulfide heterojunction material and a preparation method thereof. Sulfur powder is used as a sulfur source, and tin sulfide powder is used as a tin source. The one-dimensional tin sulfide / two-dimensional tin disulfide mixed-dimensional heterojunction material with high crystallinity and uniform distribution was obtained on the mica sheet. The preparation method adopted in the present invention is easy to operate and has good repeatability, and the optimum growth parameters in the high-quality mixed-dimensional heterojunction are obtained by simply adjusting the temperature of the sulfur powder temperature zone and the tin sulfide temperature zone. The one-dimensional tin sulfide / two-dimensional tin disulfide mixed-dimensional heterojunction prepared by the invention has unique optoelectronic properties and has potential application value in the fields of nanoelectronics and optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of low-dimensional semiconductor heterojunction materials, in particular to a mixed-dimensional heterojunction material formed by quasi-one-dimensional (1D) tin sulfide and two-dimensional (2D) tin disulfide and a preparation method thereof. Background technique [0002] Tin-based chalcogenide materials show great potential in novel electronic and optoelectronic device applications due to their excellent optoelectronic properties, such as earth abundance, high optical absorption coefficient, and tunable band gap. Among these tin-based chalcogenide materials, tin sulfide (SnS) and tin disulfide (SnS 2 ) are layered van der Waals materials, enabling them to obtain two-dimensional thin-layer structures by mechanical exfoliation or vapor phase epitaxy methods. Among them, SnS is a narrow band gap semiconductor (the band gap value is about 1.1eV), and the synthesized nanostructures usually exhibit n-type characteristics; ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/44B82Y40/00
CPCC23C16/305C23C16/44B82Y40/00
Inventor 舒海波程烨城黄杰梁培刘雪吟刘诗彤
Owner CHINA JILIANG UNIV
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