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Highly Integrated Spectral Detection System Based on Semiconductor Photodiode

A photodiode and spectral detection technology, applied in the field of spectrometers, can solve the problems of high chip processing technology requirements, complex design, heavy manufacturing workload, etc., and achieve the effect of low manufacturing technology requirements, simple design and manufacture, and simple structure

Active Publication Date: 2022-06-21
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The above inventions have the following defects and deficiencies: 1. The strategy of using characteristic patterns to reconstruct the spectrum needs to ensure that the characteristic patterns of different wavelengths must be different, otherwise the wavelengths cannot be distinguished, and the miniaturization is limited because the pattern diversity is proportional to the length of the optical path. development, and the characteristic pattern is greatly affected by factors such as temperature; 2. By placing optical components such as optical resonators on the top of the detector to obtain specific responsivity, this method requires separate fabrication of optical components and detectors, which not only increases the complexity of manufacturing , which limits the miniaturization and reduces the absorption efficiency and sensitivity of the detector; 3. By designing different photon capture holes or silicon nanowires on the photodetector to manufacture detectors with specific photoresponse, the problem of this method is to manufacture The workload is heavy and the design is complex, and the reliability is easily affected by the process level factors; 4. By using light-emitting light source chips and detectors composed of quantum dots with different light-emitting wavelengths to construct a spectrometer, miniaturization is limited, and this method requires samples to be tested Placed between the light source chip and the detector, the scope of use is limited, and the requirements for chip processing are high, the cost is high, and the design is complicated

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  • Highly Integrated Spectral Detection System Based on Semiconductor Photodiode
  • Highly Integrated Spectral Detection System Based on Semiconductor Photodiode
  • Highly Integrated Spectral Detection System Based on Semiconductor Photodiode

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Embodiment 1

[0046] Figure 4 An embodiment of a spectral detection system based on a 2X2 semiconductor photodiode detection array is given, which consists of a 2X2 semiconductor photodiode detection array (1), a bias voltage circuit (2), a transimpedance amplifier (TIA) array ( 3), an analog-to-digital (AD) conversion circuit array (4), a spectral response function system (5), a spectral reconstruction system (6), and an information display system (7). Reconstructing the spectrum can be achieved by different bias conditions.

[0047] The structure of each semiconductor photodiode in the 2×2 semiconductor photodiode detection array (1) in the embodiment is different, including the depth or doping of the PN junction, the spectral response of each semiconductor photodiode is different, and the semiconductor photodiode is different at different polarizations. The spectral response of the depression will also be different.

[0048] The light source illuminates the semiconductor photodiodes i...

Embodiment 2

[0083] Figure 5 An embodiment of a spectral detection system of a semiconductor photodiode detector is given, which consists of a semiconductor photodiode detector (1), a bias voltage circuit (2), a transimpedance amplifier (TIA) (3), an analog-digital (AD) The conversion circuit (4), the spectral response function system (5), the spectral reconstruction system (6), and the information display system (7) are composed. This embodiment shows that a detector realizes the reconstruction of the spectrum by combining 10 kinds of bias conditions.

[0084] A light source illuminates a semiconductor photodiode detector (1) to generate a photocurrent, and a transimpedance amplifier (TIA) (3) and an analog-to-digital (AD) conversion circuit (4) convert the photocurrent signal into a digital signal and input it to the spectral reconstruction system (6), the spectral response function R of the detection array under different bias voltages (i,j) (λ) is pre-tested and stored in the spectra...

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Abstract

The present invention provides a highly integrated spectral detection system based on semiconductor photodiodes, which consists of a semiconductor photodiode detection array, a bias voltage circuit, a transimpedance amplifier (TIA) array, an analog-to-digital (AD) conversion circuit array, a spectral Composed of structure system, information display system and spectral response function system, it can realize a high-performance miniaturized spectrometer with simple structure, which can be widely used in optical detection, biochemical analysis, industrial automatic monitoring, military reconnaissance, astronomical research and other fields.

Description

(1) Technical field [0001] The invention relates to a highly integrated spectral detection system based on a semiconductor photodiode, which can realize a high-performance miniaturized spectrometer with a simple structure, and can be widely used in optical detection, biochemical analysis, industrial automatic monitoring, military reconnaissance, and astronomical research. and other fields, belonging to the technical field of spectrometers. (2) Background technology [0002] Traditional spectrometers are bulky and expensive, and usually use a structure based on a dispersion system, which limits the miniaturization of traditional spectrometers because the spectral resolution is proportional to the optical path length. In recent years, new technologies have emerged to miniaturize spectrometers. A narrowband filter is used to selectively transmit light of a specific wavelength to replace a dispersive system, or a Fourier transform system is used to convert the interference infor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J3/28
CPCG01J3/2803
Inventor 邓仕杰唐鹏程苑立波
Owner GUILIN UNIV OF ELECTRONIC TECH