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Slicing method of large-size ultrathin lithium niobate wafer

A lithium niobate, large-size technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problem of lack of large-size ultra-thin lithium niobate wafer slicing methods, etc.

Active Publication Date: 2021-09-14
TDG HLDG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Therefore, there is a lack of a slicing method for obtaining high-quality large-scale ultra-thin lithium niobate wafers in the prior art

Method used

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  • Slicing method of large-size ultrathin lithium niobate wafer
  • Slicing method of large-size ultrathin lithium niobate wafer
  • Slicing method of large-size ultrathin lithium niobate wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] a) Place the lithium niobate crystal stick in a sealed container with nitric acid and hydrofluoric acid uniform mixed solution, the corrosion temperature is 20 ° C, the corrosion time is 24 hours, and the stress is fully released. ;

[0042] b) Use pure water and alcohol to clean the lithium niobate carbon whose stress is sequentially cleaned, and then secure the wafers 1 and the glass strip 2 to the adhesive, put it into the clamp, and use the crystal instrument to grasp the crystal Deviation, and trimmed the waffle crystal direction by the machine tool, and then fixed the thickness of the wafers 1 after the repairing crystal, the binder is fixed to the reference block 3, and the upper and both sides are not viscous with the adhesive. Paste ate, see figure 2 with image 3 , Obtain lithium tods of lithium niobate to be sliced;

[0043] c) Focus on the cutting fluid according to the mass fraction of each of the following components, that is, 10% cycloalkyl oil, 30% of paraffi...

Embodiment 2

[0047] a) in Example 1;

[0048] b) Use pure water and alcohol to clean the lithium niobate wavar 1 fully released stress, and then secure the wafers 1 and the glass strip 2 to the clamp, put it into the clamp, and use the crystal instrument to the crystal graft. Differential deviation, and trimming the waffle crystal direction by machine tool, and then fix the wafers 1 after the repair crystal, the binder is fixed to the reference block 3, and finally at the elbow tail, the resin sheet 4 is bonded to the resin sheet 4, the thick rod Nipped 1 resin strip 5, see Figure 4 with Figure 5 , Obtain lithium tods of lithium niobate to be sliced;

[0049] C) In Example 1, the wafer thickness was obtained from 196.1 μm, the flatness of 10.3 μm, the wafer surface line traces depth 7.6 μm, crystal deviation 0.05 °, theoretical investment of 631 pieces, fragmentation 12, fragment rate 1.90%, see Figure 8 ;

[0050] d) in Example 1;

[0051] E) Same in Example 1, a lithium tap-sonate wafer was ...

Embodiment 3

[0053] a) in Example 1;

[0054] b) Use pure water and alcohol to clean the lithium niobate carbon whose stress is sequentially cleaned, and then secure the wafers 1 and the glass strip 2 to the adhesive, put it into the clamp, and use the crystal instrument to grasp the crystal Deviation, and trimmed the waffle crystal direction by the machine tool, and then fixed to the reference block 3 with the adhesive after the repairing crystal, and finally in the basement block 3, the upper end and both sides are finally in the thickness of the crystal bar. Cohesion 3 resin strips 5, see Image 6 with Figure 7 , Obtain lithium tods of lithium niobate to be sliced;

[0055] C) In the same embodiment, the wafer thickness is 196.2 μm, the flatness of 4.5 μm, the surface line trace depth is 7.1 μm, the crystal deviation is 0.04 °, theoretically invested 611 pieces, fragmentated 10 pieces, fragment rate 1.64%, see Figure 8 ;

[0056] d) in Example 1;

[0057] E) Same in Example 1, a large size u...

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Abstract

The invention discloses a slicing method of a large-size ultrathin lithium niobate wafer. The slicing method comprises the following steps that chemical corrosion is carried out on a lithium niobate crystal bar by adopting a mixed solution of nitric acid and hydrofluoric acid; bar adhering operation is carried out on the corroded crystal bar, resin sheets are adhered to the head and the tail of the crystal bar, and resin strips are adhered to the right upper end and the two sides of the crystal bar; the adhered crystal bar is cut into a wafer, the adopted cutting fluid is a mixed solution composed of naphthenic oil, paraffin oil, polyethylene glycol monooleate, bentonite and barium sulfonate according to a certain mass fraction; debonding treatment is carried out on the wafer; and chemical corrosion is carried out on the debonded wafer, and finally the large-size ultrathin lithium niobate wafer can be obtained. The surface flatness is high, the crystal orientation deviation is small, the line mark depth is small, and the machining fragment rate is low.

Description

Technical field [0001] The present invention relates to a lithium niobate crystal material, in particular a method for large-sized thin slice of lithium niobate wafer. Background technique [0002] Lithium niobate (LiNbO 3 , Hereinafter referred to as LN) is a chemical substance, trigonal system, ilmenite (distorted perovskite-type) structure, the relative density 4.30g / cm3, a Mohs hardness of 5, 1140. Curie point deg.] C, the pressure is set electrical, ferroelectric, pyroelectric, nonlinear, optical, photoelastic photorefractive functions multifunctional material. LN because of its excellent physical properties, has been more and more attention has been widely used in aviation, aerospace, civil optical products and other fields. Wherein the piezoelectric crystal material, annealed, polarization orientation, cutting, spheronization, do plane, multi-wire cutting, grinding, polishing step of making a wafer having excellent piezoelectric properties can be produced as a surface ac...

Claims

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Application Information

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IPC IPC(8): B28D5/04B28D7/04B24B27/06B24B41/06C30B33/10C30B29/30
CPCB28D5/045B28D5/0082B24B27/0633B24B41/06C30B33/10C30B29/30
Inventor 沈浩徐秋峰朱海瀛沈蒋松顾立家杜翔川王月辉
Owner TDG HLDG CO LTD
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