Unlock instant, AI-driven research and patent intelligence for your innovation.

Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor

A magnetic semiconductor and growth method technology, applied in liquid phase epitaxial layer growth, semiconductor/solid-state device manufacturing, crystal growth, etc., to achieve the effects of low growth cost, simple equipment, and high chemical stability

Inactive Publication Date: 2004-01-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, the methods for preparing magnets / semiconductors / heterostructures are mainly molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), evaporation and sputtering, etc., but there is no report on growth by liquid phase epitaxy.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach

[0017] In order to further illustrate the features and technical solutions of the present invention, the present invention will be described in detail below in conjunction with the examples;

[0018] Compared with other methods of preparing magnetic semiconductor materials, liquid phase epitaxy is a method in which a solute-containing solution (or melt) is supercooled in a liquid phase epitaxy furnace to make the solute grow epitaxially in the form of a thin film on the substrate. Liquid phase epitaxy is grown under dynamic equilibrium conditions, and its advantages are high chemical stability of the epitaxial layer, simple equipment, and low growth cost. Magnetic semiconductor materials grown by liquid phase epitaxy can be used to fabricate both giant magnetoresistance devices and tunnel magnetoresistance devices.

Embodiment 1

[0020] (1) Main equipment for realizing the invention:

[0021] Liquid phase epitaxy furnace

[0022] Mechanical vacuum pump + diffusion vacuum pump (or other vacuum equipment)

[0023] Temperature Controller

[0024] Hydrogen generator (or hydrogen purification equipment)

[0025] Quartz reaction tube

[0026] growth boat

[0027] (2) Put the chemically cleaned pure gallium (Ga), pure manganese (Mn) and gallium arsenide (GaAs) crystals into the growth container (graphite boat) according to the ratio specified in the technical plan.

[0028] (3) Put the chemically cleaned gallium arsenide (GaAs) single wafer into the growth vessel (graphite boat).

[0029] (4) Vacuumize to make the vacuum in the growth quartz reaction tube better than 2Pa.

[0030] (5) Flow hydrogen gas at a flow rate of 0.1 liter / min. After 30 minutes, send the quartz reaction tube into the epitaxy furnace to heat the melting source.

[0031] (6) Melting the source in a flowing hydrogen environment at ...

Embodiment 2

[0035] (1) Main equipment for realizing the invention:

[0036] Liquid phase epitaxy furnace

[0037] Mechanical vacuum pump + diffusion vacuum pump (or other vacuum equipment)

[0038] Temperature Controller

[0039] Hydrogen generator (or hydrogen purification equipment)

[0040] Quartz reaction tube

[0041] growth boat

[0042] (2) Put the chemically cleaned pure gallium (Ga), pure manganese (Mn) and gallium antimonide (GaSb) crystals into the growth container (graphite boat) according to the ratio specified in the technical plan.

[0043] (3) Put the chemically cleaned gallium antimonide (GaSb) single wafer into the growth vessel (graphite boat).

[0044] (4) Vacuumize to make the vacuum in the growth quartz reaction tube better than 2Pa.

[0045] (5) Flow hydrogen gas at a flow rate of 0.1 liter / min. After 30 minutes, send the quartz reaction tube into the epitaxy furnace to heat the melting source.

[0046] (6) Melt the source in a flowing hydrogen environment at...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A heterogenous liquid-phase epitaxial growth process of magnetic semiconductor or magnetic semiconductor / semiconductor includes such steps as using GaAs monocrystal as substrate, preparing growth container from graphite or quartz, loading Ga, Mn and GaAs proportionally in said container, fully dissolving and mixing in epitaxial furnace, and over-cold epitaxial growth at 573-1073 deg.K.

Description

technical field [0001] The invention provides a semiconductor heterogeneous liquid phase epitaxial growth method, in particular to a magnetic semiconductor / semiconductor heterogeneous liquid phase epitaxial growth method. Background technique [0002] Semiconductors and magnets are two major areas of solid-state physics and two important materials for industrial applications. Combining the two to make a material have both the characteristics of a semiconductor and a magnet has very important academic significance for both basic physics and material science. And it has great value in practical application. [0003] There are two ways to realize the combination of magnet and semiconductor. One is to replace and dope the semiconductor with magnetic ions to form a magnetic semiconductor alloy. This type of material is called a dilute magnetic semiconductor. They have some peculiar properties, such as giant Zeeman splitting, giant Faraday rotation, giant negative magnetoresist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B19/00H01L21/208H10N50/01
Inventor 陈诺夫杨君玲何宏家钟兴儒吴金良林兰英
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI