SiC-based gallium oxide microwire photoelectric detector and preparation method thereof
A photodetector, gallium oxide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of unfavorable integration of thin films, slow response speed, poor heat dissipation, etc., to achieve good ultraviolet light detection ability, good heat dissipation ability and High pressure resistance, the effect of making up for the lack of heat dissipation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0049] figure 1 A schematic flow chart of a method for preparing a SiC-based gallium oxide microwire photodetector provided by an embodiment of the present invention, figure 2 A schematic structural diagram of a SiC-based gallium oxide microwire photodetector provided by an embodiment of the present invention. The invention provides a method for preparing a photodetector of a SiC-based gallium oxide micro-wire, the preparation method comprising the following steps:
[0050] Step 1, prepare gallium oxide (Ga 2 o 3 ) micron wire 1.
[0051] Step 1.1, cleaning the second substrate, the second substrate includes a Si substrate layer and SiO on the Si substrate layer 2 substrate layer.
[0052] Specifically, the second substrate is ultrasonically treated with acetone and isopropanol, and then the second substrate is cleaned with ozone ultraviolet or oxygen plasma.
[0053] In a specific embodiment, the second substrate is ultrasonically treated with acetone and isopropanol f...
Embodiment 2
[0082] See figure 2 , this embodiment provides a SiC-based gallium oxide micro-wire photodetector on the basis of the above embodiments, the photodetector includes:
[0083] The first substrate 2, the first substrate 2 includes n + SiC substrate layer 21 and located at n + n on the SiC substrate layer 21 - SiC substrate layer 22;
[0084] gallium oxide micro-wire 1, located on the first substrate 2;
[0085] The source electrode 3 and the drain electrode 4 are located on the first substrate 2 and located at both ends of the gallium oxide micro-wire 1;
[0086] The gate electrode 5 is located on the lower surface of the first substrate 2 .
[0087] The present invention prepares gallium oxide microwires on SiC, so that the prepared photodetector uses an epitaxial lightly doped SiC substrate layer as a photosensitive substrate, and produces a one-dimensional gallium oxide microwire and a three-dimensional SiC heterostructure , with better UV detection capability.
[0088...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More