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Preparation method of ultra-fine grain high-temperature-resistant high-frequency manganese zinc ferrite

A manganese-zinc-ferrite, high-temperature-resistant technology, used in the manufacture of inductors/transformers/magnets, magnetic objects, magnetic materials, etc., can solve the problems of poor high-temperature characteristics and large high-frequency losses, and achieve enhanced high-temperature characteristics and high-frequency losses. Small, loss-reducing effect

Pending Publication Date: 2021-11-09
HAIAN INST OF HIGH TECH RES NANJING UNIV
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

Manganese-zinc ferrite produced by the existing preparation process has defects such as large high-frequency loss and poor high-temperature characteristics

Method used

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  • Preparation method of ultra-fine grain high-temperature-resistant high-frequency manganese zinc ferrite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] with Fe 2 o 3 , MnO 2 , ZnO as the main raw material, SnO 2 Dosing for auxiliary raw materials, Fe 2 o 3 Content 53mol%, MnO 2 Content 36mol%, ZnO content 11mol%, SnO 2 The content is 0.001wt%; after the batching is completed, a ball mill is carried out at a speed of 220 rpm, and the ball milling time is 2h; the raw material after the ball milling is pre-calcined, the pre-burning temperature is 850°C, and the holding time is 2h; Hetero-CaCO 3 Content 0.01wt%, V 2 o 5 Content 0.01wt%, TiO 2 Content 0.1wt%, Co 2 o 3 The content is 0.2wt%; the obtained raw materials are subjected to secondary ball milling, the speed of rotation is 220 rpm, and the ball milling time is 3h; after the secondary ball milling is completed, 10PVA is added for granulation; after that, pre-pressurized molding at room temperature is carried out, and the applied pressure is 3MPa; Then carry out high-temperature deformation alternately in the horizontal and vertical directions at a temper...

Embodiment 2

[0026] with Fe 2 o 3 , MnO 2 , ZnO as the main raw material, SnO 2 Dosing for auxiliary raw materials, Fe 2 o 3 Content 56mol%, MnO 2 Content 36mol%, ZnO content 8mol%, SnO 2 The content is 0.005wt%; after the batching is completed, a ball mill is carried out at a speed of 250 rpm, and the ball milling time is 3 hours; the raw materials after the ball milling are pre-calcined, the pre-calcination temperature is 950 ° C, and the holding time is 3 hours; Hetero-CaCO 3 Content 0.1wt%, V 2 o 5 Content 0.001wt%, TiO 2 Content 0.2wt%, Co 2 o 3 The content is 0.4wt%; the obtained raw materials are subjected to secondary ball milling, the speed of rotation is 250 rpm, and the ball milling time is 5h; after the secondary ball milling is completed, 15% PVA is added for granulation; then pre-pressurized at room temperature, and the applied pressure is 4MPa; followed by high-temperature deformation alternately in the transverse and longitudinal directions at a temperature of 1...

Embodiment 3

[0028] with Fe 2 o 3 , MnO 2 , ZnO as the main raw material, SnO 2 Dosing for auxiliary raw materials, Fe 2 o 3 Content 55mol%, MnO 2 Content 33mol%, ZnO content 12mol%, SnO 2 The content is 0.003wt%; after the batching is completed, a ball mill is carried out at a speed of 230 rpm, and the ball milling time is 2.5h; the raw material after the ball milling is pre-calcined, the pre-burning temperature is 900°C, and the holding time is 2.5h; Doping is carried out after completion , doped with CaCO 3 Content 0.05wt%, V 2 o 5 Content 0.005wt%, TiO 2 Content 0.15wt%, Co 2 o 3 The content is 0.3wt%; the obtained raw materials are subjected to secondary ball milling, the speed of rotation is 230 rpm, and the ball milling time is 4h; after the secondary ball milling is completed, 12% PVA is added for granulation; then pre-pressurized at room temperature, and the applied pressure is 3.5MPa; followed by high-temperature deformation alternately in the horizontal and vertical ...

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Abstract

The invention discloses a preparation method of ultra-fine grain high-temperature-resistant high-frequency manganese zinc ferrite, which mainly comprises the following steps: taking Fe2O3, MnO2 and ZnO as main raw materials, taking SnO2 as an auxiliary raw material, proportioning, carrying out primary ball milling, pre-sintering, doping CaCO3, V2O5, TiO2 and Co2O3, carrying out secondary ball milling, adding PVA, granulating, pre-pressurizing and forming at room temperature, deforming at high temperature, pressurizing and forming at high temperature, sintering, and quenching and cooling to obtain the manganese zinc ferrite. According to the invention, SnO2 is used as an auxiliary raw material, and Sn can enter the crystal lattice of the manganese zinc ferrite, so that transition of electrons at high temperature and high frequency is hindered, and loss is reduced; CaCO3, V2O5, TiO2 and Co2O3 are adopted for doping, impurity elements are enriched in a grain boundary, the grain boundary resistivity is increased, and loss is reduced; high-temperature compression deformation is adopted, deformation storage energy is provided, crystal grain forming positions are increased, then crystal grains are refined, and loss is reduced; and by adopting quenching cooling, element diffusion in the cooling process is reduced, and the high-temperature characteristic of the ferrite is enhanced. The obtained manganese zinc ferrite has the advantages of ultra-fine grains, high saturation flux density, high temperature resistance and low high-frequency loss.

Description

technical field [0001] The invention relates to the field of high-frequency manganese-zinc ferrite preparation. Background technique [0002] In the 5G era, electronic devices are constantly developing towards higher frequencies. The high-frequency characteristics of soft ferrites represented by manganese-zinc ferrite and the high-frequency and low-loss characteristics at high temperatures caused by device heating are particularly important. In addition, increasing the operating frequency is conducive to reducing the volume and weight of the magnetic core, and is conducive to the miniaturization and light weight of the device. [0003] At present, the preparation of high-frequency manganese-zinc ferrite applied to 2~4MHz has become a technical difficulty. The manganese-zinc ferrite produced by the existing preparation process has defects such as large high-frequency loss and poor high-temperature characteristics. Contents of the invention [0004] The present invention o...

Claims

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Application Information

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IPC IPC(8): C04B35/26C04B35/622H01F1/34H01F41/02
CPCC04B35/2658C04B35/622H01F1/344H01F41/02C04B2235/3208C04B2235/3232C04B2235/3239C04B2235/3275C04B2235/6567C04B2235/6565C04B2235/786
Inventor 唐少春赵宇飞
Owner HAIAN INST OF HIGH TECH RES NANJING UNIV
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