A kind of self-assembled nano-silica abrasive and polishing liquid containing the abrasive and application

A nano-silicon dioxide and silicon dioxide technology, applied in the polishing composition containing abrasives, nanotechnology, nanotechnology, etc., can solve the problems of heavy scratches on the wafer surface, reduced polishing efficiency, and difficulty in uniform dispersion of nanoparticles , to achieve the effect of increasing the removal rate, reducing the probability of scratches, and improving the surface morphology

Active Publication Date: 2022-08-02
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chemical mechanical polishing effect of hard and brittle materials is still unsatisfactory. The domestic sapphire substrate polishing generally has the following problems: (1) The polishing rate is low; (2) There are heavy scratches on the wafer surface, which needs to be reworked and re-polished
[0004] The commonly used abrasive in the polishing of hard and brittle materials is SiO 2 and Al 2 o 3 , but wherein silicon dioxide abrasive (Mohs hardness is 6-7) because its Mohs hardness is lower than workpiece hardness, polishing efficiency is low, so polishing time often needs several hours, and this has reduced polishing efficiency greatly, and Al 2 o 3 Abrasives (Mohs hardness is about 9) due to their high hardness, nanoparticles are difficult to disperse evenly and are easy to agglomerate, which often cause rough and deep marks on the wafer and need to be reworked

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of self-assembled nano-silica abrasive and polishing liquid containing the abrasive and application
  • A kind of self-assembled nano-silica abrasive and polishing liquid containing the abrasive and application
  • A kind of self-assembled nano-silica abrasive and polishing liquid containing the abrasive and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0042] The preparation method of self-assembled nano-silica abrasive, the specific method is as follows:

[0043] Pre-Preparation: Synthesis of Silica Nanospheres (SNS).

[0044] First, 0.3 g of arginine was dissolved in 200 g of water, and then 40 g of tetraethyl orthosilicate (TEOS) was added. The two-phase reaction is stirred at a speed of 500 rpm in a water bath, the reaction temperature is 60 ° C, and the reaction is performed for 24 h to obtain spherical silica abrasives with a particle size range of 50-80 nm;

[0045] Step 1: Synthesis of silica nanosphere (SNS) seed solution.

[0046]100 g of pre-prepared spherical silica was taken out, water (300 g), arginine (0.48 g) and F127 (for PEO-PPO-PEO triblock copolymer, 5.5 g) were added in sequence, and 40 g of TEOS was added. The reaction was stirred in a water bath at 60° C. for 24 h, and the obtained blue transparent liquid was a silica (SNS) seed solution.

[0047] Step 2: Preparation of seed meal by further growth o...

Embodiment 1

[0051] A polishing liquid based on self-assembled nano-silica abrasive, in parts by weight, comprising:

[0052] Self-assembled nano-silica (final non-smooth self-assembled nano-silica abrasive prepared through pre-preparation, step 1, and step 2 in Preparation Example 1): 20 parts;

[0053] Dispersant: 0.1 part of polymethyl acrylate (molecular weight 40,000);

[0054] Metal ion scavenger: 0.1 part of ethylenediamine di-o-phenylacetate sodium (EDDHA-Na);

[0055] Surfactant: 0.5 part of polyoxyethylene alkylamine;

[0056] pH adjuster: 1 part of triethanolamine;

[0057] Deionized water: 78.3 parts.

[0058] The preparation method of polishing liquid:

[0059] 1) Weigh 78.3 parts of deionized water according to the formula components;

[0060] 2) add 20 parts of self-assembled nano-silica abrasives to deionized water, stir at 150rpm for 10min;

[0061] 3) Add 1 part of triethanolamine to the above 2), and stir at 200rpm for 10min;

[0062] 4) Add 0.1 part of polymethyl...

Embodiment 2-19、 comparative example 1-5

[0066] The components and mass contents of the polishing liquids of Examples 2-19 of the present invention and Comparative Examples 1-5 are shown in Table 1.

[0067] The preparation method of the polishing liquid is the same as that in Example 1.

[0068] Table 1 Examples 2-19 and Comparative Examples 1-5

[0069]

[0070]

[0071]

[0072]

[0073] The spherical silica abrasives of Comparative Examples 1-3 are the spherical silica abrasives pre-prepared in Preparation Example 1.

[0074] like figure 1 Shown are the scanning electron microscope pictures of spherical silica abrasives synthesized in the pre-preparation steps of Comparative Examples 1-3. It can be seen from the figure that the pre-preparation method successfully synthesized spherical silica abrasives with uniform size.

[0075] The above embodiment can be prepared according to the specific preparation steps of the above-mentioned polishing liquid.

[0076] The polishing experiment parameters of Pe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of self-assembled nano-silica, including the synthesis of silica seed liquid and the growth of silica seeds: PEO-PPO-PEO triblock copolymer, a solution containing spherical silica Mix with the solution containing catalyst; add the solution containing silicon precursor at 40℃~60℃ to obtain solution A; stir and react for 20~30 hours to obtain silica seed solution, heat to boiling, drop silicic acid solution, The reaction is carried out for 1 to 3 hours. The surface morphology of the self-assembled nano-silica has been improved, allowing the particles to form multi-point contact with the wafer, which is conducive to the tribochemical reaction to improve the removal rate; the multi-point contact can effectively disperse the load, make the scratches shallower, and help Reduce the chance of scratches. It is used for ultra-precision polishing of hard and brittle materials. Through the synergistic effect of dispersant and metal ion scavenger, the adsorption and dispersion of abrasive ions or particles can reach a good balance, and it is easier to clean after polishing.

Description

technical field [0001] The invention relates to a polishing liquid based on self-assembled nano-silica abrasives, in particular to a self-assembly method of abrasives, and belongs to the technical field of fine chemicals. Background technique [0002] With the development of the LED industry, the chip substrate is gradually developing in the direction of large size and high quality. Among them, sapphire wafer is a common substrate in the current LED industry, and sapphire is a general term for alumina single crystal material, which has excellent chemical stability, optical transparency and ideal mechanical properties. It is often used as a material for optoelectronic components. As the processing of electronic devices has gradually reached the nanometer or even sub-nanometer level, higher requirements have been placed on the precision grinding and polishing technology. [0003] Chemical mechanical polishing technology is currently one of the key technologies in surface proc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14C09G1/02B24B1/00B82Y30/00B82Y40/00
CPCC09K3/1436C09G1/02B24B1/00B82Y30/00B82Y40/00
Inventor 侯军王凯丽
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products