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Solid-phase synthesis method of narrow-band gap semiconductor MTeI

A solid-phase synthesis and semiconductor technology, applied in chemical instruments and methods, selenium/tellurium compounds, inorganic chemistry, etc., can solve problems such as synthesis hindering development, achieve good practical prospects, shorten synthesis time, and facilitate operation

Pending Publication Date: 2021-11-30
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the synthesis of this compound has been one of the difficulties hindering its development

Method used

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  • Solid-phase synthesis method of narrow-band gap semiconductor MTeI
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  • Solid-phase synthesis method of narrow-band gap semiconductor MTeI

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preparation example Construction

[0022] The invention provides a solid phase synthesis method of narrow bandgap semiconductor MTeI, comprising the following steps:

[0023] The metal M element, Te element and excess I 2 The simple substance undergoes a solid-state reaction under vacuum conditions to obtain a narrow bandgap semiconductor MTeI;

[0024] M is Bi and / or Sb.

[0025] In the present invention, the excess I 2 Simple substance refers to the calculation of stoichiometric ratio, a slight excess but not more than 1.2 times I 2 Simple substance.

[0026] In the present invention, the metal M element, Te element and excess I 2 The simple substance is placed in the quartz tube, and the quartz tube is sealed while maintaining the vacuum state in the tube, and the sealed quartz tube is placed obliquely in the muffle furnace, and the reactants are kept at the bottom of the quartz tube.

[0027] Then make the muffle furnace heat up to temperature T, then keep the temperature for 20 hours, and finish the r...

Embodiment 1

[0036] Get 0.5mmol bismuth [Bi] elemental powder, 0.5mmol tellurium [Te] elemental powder and slightly more than 0.25mmol iodine elemental [I 2 ] in a quartz tube with an inner diameter of 8mm, and seal the quartz tube while maintaining the vacuum inside the tube. Place the sealed quartz tube obliquely in the muffle furnace to keep the reactant at the bottom of the quartz tube. After a certain period of time, the muffle furnace is heated to about 500°C, and kept at this temperature for 20 hours. After the reaction, the muffle furnace was naturally cooled to room temperature, and a bulk solid BiTeI product with metallic luster was obtained.

[0037] The morphology, structure, phase and composition of the BiTeI product are characterized as follows:

[0038] BiTeI belongs to the P3m1 space group, and its X-ray diffraction pattern (XRD) is as follows figure 1 As shown in a, among them, at 12.932°, 23.675°, 26.033°, 27.067°, 35.474°, 39.492°, 41.624°, 43.768°, 46.563°, 50.358°, ...

Embodiment 2

[0045] Get the same amount of 0.5mmol bismuth [Bi] elemental powder as in Example 1, 0.5mmol tellurium [Te] elemental powder and slightly more than 0.25mmol iodine elemental [I 2 ] in a quartz tube with an inner diameter of 8mm, and seal the quartz tube while maintaining the vacuum inside the tube. Place the sealed quartz tube obliquely in the muffle furnace to keep the reactant at the bottom of the quartz tube. After a certain period of time, the temperature of the muffle furnace is raised to 550°C, and it is kept at this temperature for 20 hours. After the reaction, the muffle furnace was naturally cooled to room temperature, and a bulk solid BiTeI product with metallic luster was obtained. Figure 5 It is the X-ray diffraction pattern (XRD) and scanning electron micrograph (SEM) of the BiTeI prepared in Example 2. All the diffraction peak positions in the XRD can match the crystal planes of BiTeI, indicating that at a temperature of 550 ° C, still A pure narrow bandgap se...

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Abstract

The invention provides a solid-phase synthesis method of a narrow-band-gap semiconductor MTeI, which comprises the following steps: carrying out solid-phase reaction on a metal M simple substance, a Te simple substance and excessive I2 simple substance under a vacuum condition to obtain the narrow-band-gap semiconductor MTeI, wherein M is Bi and / or Sb. According to the invention, the metal Bi elementary substance and / or Sb elementary substance, Te elementary substance and I2 elementary substance are used as precursors for the first time, the novel narrow-band gap semiconductor BiTeI and / or SbTeI crystal is prepared through a simple one-step solid-phase reaction method, the synthesis path is simple, and the operation is convenient. The narrow-band-gap semiconductor BiTeI and / or SbTeI crystal prepared by the method is high in crystallinity, high in purity and good in stability, the synthesis time is greatly shortened, and the method has a good practical prospect.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a solid-phase synthesis method of narrow-bandgap semiconductor MTeI. Background technique [0002] As a compound composed of heavy elements, the BiTeI compound has a strong correlation effect for its electrons, which brings many interesting properties and has been deeply studied by physicists. However, the synthesis of this compound has been one of the difficulties hindering its development. Therefore, there is an urgent need to develop lower-cost, convenient and quick synthesis methods for this type of materials. Contents of the invention [0003] The object of the present invention is to provide a kind of solid phase synthesis method of narrow bandgap semiconductor MTeI, the narrow bandgap semiconductor MTeI crystal crystallinity that the method in the present invention prepares is high, and stability is good, has good practical prospect. [0004] The invent...

Claims

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Application Information

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IPC IPC(8): C01B19/00
CPCC01B19/002
Inventor 杨晴王迦卉
Owner UNIV OF SCI & TECH OF CHINA
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