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Porous Cu-SiC composite film and preparation method thereof

A composite film and substrate technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of volume fraction, distribution and particle size that are difficult to control, and achieve tight combination, simple process, and pore size fine uniform effect

Active Publication Date: 2021-12-07
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing infiltration technology is used to prepare SiC metal material composite materials such as Al-SiC composite materials. Although the content of SiC is easy to adjust, its volume fraction, distribution and particle size are not easy to control.

Method used

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  • Porous Cu-SiC composite film and preparation method thereof
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  • Porous Cu-SiC composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a porous Cu-SiC composite membrane, comprising the steps of:

[0031] S1. Prepare the substrate: take the monocrystalline silicon wafer and put it in absolute ethanol, clean it with an ultrasonic cleaner for 15 minutes, then wash it in deionized water for 15 minutes, dry it in an oven, and place the treated substrate on the substrate. on the stage;

[0032] S2. Target installation: install the Cu target with a mass percentage concentration of 99.99% and the SiC target with a mass percentage concentration of 99.99% respectively in the DC sputtering and radio frequency sputtering target positions in the vacuum chamber, and first use a mechanical pump to evacuate to 20Pa. Then use a molecular pump to evacuate, so that the vacuum degree of the vacuum chamber reaches 4.0×10 -4 Pa;

[0033] S3, preparing Cu 3 N-SiC composite film: Introduce argon gas with a volume percentage concentration of 99.99% into the S2 medium vacuum chamber, the flow rate is ...

Embodiment 2

[0038] A method for preparing a porous Cu-SiC composite membrane, comprising the steps of:

[0039] S1. Prepare the substrate: take the steel sheet and put it in absolute ethanol, clean it with an ultrasonic cleaner for 15 minutes, then wash it in deionized water for 15 minutes, dry it in an oven, and place the processed substrate on the substrate table superior;

[0040]S2. Target installation: install the Cu target with a mass percentage concentration of 99.99% and the SiC target with a mass percentage concentration of 99.99% respectively in the DC sputtering and radio frequency sputtering target positions in the vacuum chamber, and first use a mechanical pump to evacuate to 20Pa. Then use a molecular pump to evacuate, so that the vacuum degree of the vacuum chamber reaches 4.0×10 -4 Pa;

[0041] S3, preparing Cu 3 N-SiC composite film: Introduce argon gas with a volume percentage concentration of 99.99% into the S2 medium vacuum chamber, the flow rate is 20SCCM, adjust t...

Embodiment 3

[0046] A method for preparing a porous Cu-SiC composite membrane, comprising the steps of:

[0047] S1. Prepare the substrate: take the monocrystalline silicon wafer and put it in absolute ethanol, clean it with an ultrasonic cleaner for 10 minutes, then wash it in deionized water for 10 minutes, dry it in an oven, and place the treated substrate on the substrate. on the stage;

[0048] S2. Target installation: install the Cu target with a mass percentage concentration of 99.999% and the SiC target with a mass percentage concentration of 99.9% respectively in the DC sputtering and radio frequency sputtering target positions in the vacuum chamber, and first use a mechanical pump to evacuate to 20Pa. Then use a molecular pump to evacuate, so that the vacuum degree of the vacuum chamber reaches 1.0×10 -4 Pa;

[0049] S3, preparing Cu 3 N-SiC composite film: Introduce argon gas with a volume percentage concentration of 99.999% into the S2 medium vacuum chamber, the flow rate is...

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Abstract

The invention belongs to the technical field of metal composite materials and preparation thereof, and provides a porous Cu-SiC composite film and a preparation method thereof. The preparation method comprises the following steps of S1, preparing a substrate; S2, installing a target position; S3, a Cu3N-SiC composite film is prepared; and S4, a porous Cu-SiC composite film is prepared, the Cu3N-SiC composite film is placed in an inert gas environment to be subjected to annealing treatment, and the uniformly-distributed porous Cu-SiC composite film is obtained. The low decomposition temperature of the Cu3N thin film is utilized, the Cu3N thin film is decomposed into elemental copper and nitrogen, double-target co-sputtering is carried out, the sputtering power of the copper target can be conveniently changed, the content of copper or SiC in the thin film can be effectively regulated and controlled, the volume distribution, the particle size and the metal components of SiC in the composite film can be conveniently and effectively regulated and controlled, the process is simple, the film is tightly combined with the substrate, the aperture is fine and uniform, and the Cu-SiC film is uniform in pore distribution.

Description

technical field [0001] The invention belongs to the technical field of metal composite materials and their preparation, and provides a porous Cu-SiC composite membrane and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) has excellent mechanical properties such as high thermal conductivity, small thermal expansion coefficient, good reinforcement and toughening, crack self-healing function, wear resistance, and recoverable large compressive strain, and it is compatible with carbon-based, ceramic, Metals and many other materials have good chemical compatibility. SiC and its composite materials have a wide range of uses. Coating silicon carbide powder on the surface or inner wall of the workpiece can improve its wear resistance and service life; it can be used to make silicon carbide rods for electric heating elements; it can be made into advanced refractory materials that are resistant to thermal shock , small size, light weight and high stren...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58
CPCC23C14/352C23C14/06C23C14/5806C23C14/5846Y02E30/30
Inventor 肖剑荣
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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