Self-finishing freeze-dried polishing wheel as well as preparation method and application thereof

A freeze-drying and drying technology, which is applied in the field of self-repairing freeze-drying polishing wheels and its preparation, can solve the problems of unstable processing quality, easy fragmentation, difficult processing, etc., and achieve the effect of high-quality polishing and large elasticity

Active Publication Date: 2021-12-17
苏州赛尔特新材料有限公司
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the difficulty of processing diamond wafer materials, the efficiency of existing polishing tools is extremely low when processing diamond wafers. It usually

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-finishing freeze-dried polishing wheel as well as preparation method and application thereof
  • Self-finishing freeze-dried polishing wheel as well as preparation method and application thereof
  • Self-finishing freeze-dried polishing wheel as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Add 20g of sodium alginate, 5g of xanthan gum, and 600g of water into a beaker, stir at room temperature at 550rpm for 2h, and make mixture 1;

[0021] In addition, add 600g of water, 50g of nylon powder, 120g of pulp and 50g of W5 diamond abrasive into a beaker, stir at room temperature for 30min at 550rpm, and prepare mixture 2;

[0022] Add 5g of calcium chloride to 1Kg of water to obtain a calcium salt solution;

[0023] Add mixture 2 to mixture 1 at room temperature, stir at 1000 rpm for 8 hours, pour into a mold after the stirring is completed, then soak the mold in calcium salt solution for 120 minutes, take it out, and obtain a gel polishing body;

[0024] Put the gel polishing body into a vacuum drying oven, dry it in vacuum at 50°C for 3 hours, and the vacuum degree is 1000Pa; after taking it out, freeze it at -18°C for 6 hours, then freeze-dry it, drop it to -70°C for 5 hours, and then keep it at -70 °C freeze-drying time 24h, obtain freeze-dried polishing b...

Embodiment 2

[0027] Use conventional grinding wheel structure glue (such as epoxy AB glue) to glue the freeze-dried polishing block 2 on the existing stainless steel substrate 1, see figure 1 , the freeze-dried gel block is pasted on the surface of the stainless steel substrate to form a self-repairing freeze-dried polishing wheel.

Embodiment 3

[0029] Use the self-dressing freeze-dried polishing wheel of Example 2 to process a 2-inch diamond wafer (Sa is 0.4nm), the base is a Heriot 13B polishing machine, the speed is 50rpm, the pressure is 200kg, and the time is 2h. After polishing, the wafer Surface roughness Sa is 57pm, Sq is 71.4pm, see the results figure 2 and image 3 . The thickness change of the wafer before and after polishing is measured by a thickness gauge to calculate the material removal rate, which is 2.55nm / min.

[0030] For the diamond wafer whose Sa has reached 0.4nm, it is difficult to further polish the polishing method used in the existing industrial production. The applicant researched a method that can further reduce the surface roughness of the diamond wafer, but it cannot reach below 150pm, and the processing efficiency It is extremely low, and the material removal rate in the polishing stage is 0.02nm / min; the self-conditioning freeze-dried polishing wheel of the present invention is used...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a self-finishing freeze-dried polishing wheel as well as a preparation method and application thereof. The preparation method comprises the steps of mixing sodium alginate, xanthan gum and water to obtain a mixture 1; mixing polyamide powder, pulp, a diamond abrasive and water to obtain a mixture 2; and then mixing and stirring the mixture 1 and the mixture 2 and then pouring the mixture into a mold, then immersing the mold in a calcium salt solution, taking out the product to obtain a gel polishing body, carrying out vacuum drying and freeze drying on the gel polishing body to prepare a freeze-dried polishing block, and then compounding the freeze-dried polishing block with a matrix to obtain the self-finishing freeze-dried polishing wheel. The polishing wheel prepared through the freeze-dried gel has an excellent polishing effect on a diamond wafer for the first time, and the roughness of the pm level is achieved.

Description

technical field [0001] The invention belongs to the technology of precision machining tools, and in particular relates to a self-repairing freeze-dried polishing wheel and its preparation method and application. Background technique [0002] As a representative material of the third-generation semiconductor, diamond wafer has many excellent characteristics such as ultra-high thermal conductivity and ultra-wide band gap, and is considered to be the "star material" of the third-generation semiconductor. But at the same time, due to the ultra-high hardness and brittleness of the diamond wafer itself, the difficulty of processing its own material limits its rapid development, and its wafer processing technology has become one of the bottlenecks restricting its development. As the most advanced global ultra-high-precision planarization solution, CMP polishing has become a necessary process for existing wafer processing. However, due to the difficulty of processing diamond wafer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24D18/00B24D3/20B24D3/34B24D13/14B24B29/02
CPCB24D18/0009B24D18/0027B24D18/0072B24D18/009B24D3/20B24D3/344B24D3/346B24D13/14B24B29/02
Inventor 胡光球陆静王凯平
Owner 苏州赛尔特新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap