Nitrogen-doped P-type monocrystalline silicon manufacturing method

Abstract

The embodiment of the invention discloses a nitrogen-doped P-type monocrystalline silicon manufacturing method which comprises the following steps: putting highly-doped nitrogen single crystal and polycrystalline silicon into a crucible, and heating a crystal pulling furnace to obtain a first silicon melt; adding a highly doped boron single crystal into the first silicon melt to obtain a second silicon melt; and drawing the nitrogen-doped P-type monocrystalline silicon in the second silicon melt by a czochralski method. According to the nitrogen-doped P-type monocrystalline silicon manufacturing method, the nitrogen and the boron are completely fused into the silicon melt at a relatively low furnace chamber temperature, and the technical problems of high furnace chamber temperature and long heating time are solved. Meanwhile, the melting sequence of the highly-doped boron single crystal and the highly-doped nitrogen single crystal is changed, so that the condition of crystal pulling failure caused by the formation of boron nitride (BN) is inhibited.

Description

technical field [0001] The invention relates to the field of semiconductor silicon wafer production, in particular to a method for manufacturing nitrogen-doped P-type single crystal silicon. Background technique [0002] With the global development of informatization, the size of devices in the application field of silicon wafers continues to decrease. At the same time, with the gradual increase in the integration of devices, the application fields of power devices are becoming wider and wider. The main characteristics of power devices are high voltage resistance, substrate Resistance has a great influence on the performance of the device, so the resistivity of the substrate is required to be high and the resistivity change small. Due to the lattice mismatch between doping elements and silicon elements, there is a segregation phenomenon during the growth of single crystal silicon, that is, the concentration of doping elements crystallized in the single crystal silicon ingot ...

AI Technical Summary

Problems solved by technology

However, in the process of boron doping and nitrogen doping, since the boron element as a boron dopant is volatile and will form refractory boron nitride (BN) with nitrogen, the boron content of the P-type silicon wafer with low resistivity made Low, or cause dislocations to cause crystal pull failure

At the same time, the high melting temperature of boron dopant and nitrogen dopant makes the quartz crucible soften, resulting in uncontrollable oxygen precipitation, which affects the gettering effect and the quality of P-type silicon wafer with low resistivity.

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