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Method for growing graphene on structured copper base, cable core material and preparation method of cable core material

A technology of cable core material and graphene, which is applied in the direction of cable/conductor manufacturing, conductive materials, conductive materials, etc., can solve the problems of product conductivity decline, equivalent resistance increase, uneven current distribution, etc., and achieve good electrical performance , Improve life and performance, improve oxidation resistance and corrosion resistance

Pending Publication Date: 2022-01-11
SHANGHAI SIMBATT ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the application of cables made of this material, the current distribution will be uneven and the equivalent resistance will increase due to the alternating current.
However, if graphene is repeatedly grown alternately on copper powder and copper foil, there will be different thicknesses of graphene caused by different growth times of copper genes during the alternate growth process, and finally the product will be conductive due to the continuous deposition of carbon on the copper base. performance drop

Method used

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  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material
  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material
  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material

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preparation example Construction

[0038] The preparation method of the cable core material of the present invention is to form the copper-based graphene prepared by the above method through step S3: repressing, sintering and thermal sintering to obtain the cable core material. Wherein, the specific steps of step S3 include:

[0039] Step S31: performing a repressing operation on the copper-based graphene, the repressing operation is an isostatic pressing operation, and the isostatic pressure is 300-500 MPa;

[0040] Step S32: Sintering the repressed copper-based graphene under the protection of argon, the sintering temperature is 900°C, and the sintering time is 1-3 hours;

[0041] Step S33: putting the sintered copper-based graphene into a hot extruder and extruding it into a thin strip to prepare a cable core material, and the mold temperature in the hot extruder is 900°C.

[0042] It is worth mentioning that the direction in which the sintered copper-based graphene is put into the hot extrusion machine is ...

Embodiment 1

[0047] Step S1: Cut the copper foil according to the size of the mould, alternately stack 0.1g of copper foil and 4g of copper powder into the mould, press isostatically to form an ingot, and the isostatic pressure is 5MPa.

[0048] Step S21: Put the ingot into the crucible, and send it to the middle position of the chemical vapor deposition furnace; first, vacuum the chemical vapor deposition furnace, so that the air pressure in the chemical vapor deposition furnace drops slowly until the gas phase in the furnace drops to 10 -2 Pa, then open the argon gas valve, feed argon to flush the chemical vapor deposition furnace, and close the vacuum valve at the same time to remove other gases such as oxygen in the chemical vapor deposition furnace. When the air pressure in the furnace rises to normal pressure, adjust the argon valve to keep the argon flow at 120 sccm, and open the exhaust valve of the chemical vapor deposition furnace at the same time. Under the protection of 120sccm...

Embodiment 2

[0056] Step S1: Cut the copper foil according to the size of the mold, alternately stack 0.1g copper foil and 3g copper powder into the mold, and perform isostatic pressing to form an ingot. The isostatic pressure is 8MPa.

[0057] Step S21: Put the ingot into the crucible, and send it to the middle position of the chemical vapor deposition furnace; first, vacuum the chemical vapor deposition furnace, so that the air pressure in the chemical vapor deposition furnace drops slowly until the gas phase in the furnace drops to 10 -2 Pa, then open the argon gas valve, feed argon to flush the chemical vapor deposition furnace, and close the vacuum valve at the same time to remove other gases such as oxygen in the chemical vapor deposition furnace. When the air pressure in the furnace rises to normal pressure, adjust the argon gas valve to keep the argon gas flow at 100 sccm, and open the exhaust valve of the chemical vapor deposition furnace at the same time. Under the protection of ...

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Abstract

The invention discloses a method for growing graphene on a structured copper base, a cable core material and a preparation method of the cable core material. The method for growing the graphene on the structured copper base comprises the following steps of S1, alternately stacking copper powder and copper foil into a mold, and carrying out isostatic pressing treatment molding to form an ingot; and S2, growing the graphene on the ingot through a chemical vapor deposition method to form the copper-based graphene. The formed copper-based graphene is subjected to re-pressing, sintering and hot sintering wire drawing forming in sequence, and the cable core material is prepared; and the prepared cable core material comprises a copper material and the graphene, wherein the copper material comprises the copper foil and the copper powder, and the copper foil and the copper powder are coated with the graphene. The copper powder and the copper foil are alternately stacked to carry out structural treatment on the copper base, so that the service life of a copper-based graphene material is prolonged, and the performance of the copper-based graphene material is improved; and the cable core material formed by further processing generates obvious anisotropy, and the phenomena of non-uniform current distribution and equivalent resistance increase caused by alternating current in the use of the cable core material are improved.

Description

technical field [0001] The invention relates to the technical field of graphene materials, in particular to a method for growing graphene on a structured copper base, a cable core material and a preparation method thereof. Background technique [0002] The resistivity of copper is 1.05 times that of silver, and its price is only one tenth of that of silver. Therefore, under the premise of meeting the requirements of electrical conductivity, copper has higher cost performance in industrial growth. However, copper powder is not resistant to oxidation and Corrosion, easy to be oxidized to copper oxide in the environment, and patina will be formed in humid air. In order to ensure that the copper-based material will not fail when used in these environments, it is particularly important to make a protective layer on its surface. Due to its excellent electrical and thermal conductivity, graphene is used in various industries, such as electrode materials, supercapacitors, thermally...

Claims

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Application Information

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IPC IPC(8): B22F7/04B22F3/16C23C16/26H01B1/02H01B1/04H01B13/00
CPCB22F7/04B22F3/16C23C16/26H01B13/00H01B13/0016H01B1/026H01B1/04
Inventor 马瑜沈晗睿杨军付金良张文卿
Owner SHANGHAI SIMBATT ENERGY TECH CO LTD
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