Method for growing graphene on structured copper base, cable core material and preparation method of cable core material

A technology of cable core material and graphene, which is applied in the direction of cable/conductor manufacturing, conductive materials, conductive materials, etc., can solve the problems of product conductivity decline, equivalent resistance increase, uneven current distribution, etc., and achieve good electrical performance , Improve life and performance, improve oxidation resistance and corrosion resistance

Pending Publication Date: 2022-01-11
SHANGHAI SIMBATT ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the application of cables made of this material, the current distribution will be uneven and the equivalent resistance will increase due to the alternating current.
However, if graphene is repeatedly grown alternately on copper powder and copper foil, t

Method used

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  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material
  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material
  • Method for growing graphene on structured copper base, cable core material and preparation method of cable core material

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Experimental program
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Example Embodiment

[0038] The method for preparing the cable core material of the present invention is to form the copper-based graphene formed by the above method to form a cable core material by step S3: recooling, sintering and thermosetting wire. Among them, the specific steps of step S3 include:

[0039] Step S31: Refused the copper-based graphene, the complex operation is the static pressure operation, the like is 300 ~ 500 MPa;

[0040] Step S32: Sintering after the recurning copper-based graphene is sintered under argon, the sintering temperature is 900 ° C, the sintering time is 1 to 3 h;

[0041] Step S33: Put the sintered copper-based graphene in the thermal extruder to extrud the fine strip to form a cable core material, and the mold temperature in the heat squeeze press is 900 ° C.

[0042] It is worth mentioning that the sintered copper-based graphene is placed in the direction of the thermal extruder is perpendicular to the direction of the copper foil, which ensures that the copper f...

Example Embodiment

[0046] Example one

[0047] Step S1: The copper foil is cut according to the mold size, alternately laminated in a mold in a mold, and is placed in the mold, and is formed by the like, and the ingot is formed, and the static pressure is 5 MPa.

[0048] Step S21: The ingot is placed in a crucible, and the intermediate position of the chemical gas phase deposit; first, the chemical gas phase deposit furnace is evacuated, so that the air pressure in the chemical gas deposits slowly decreases, until the furnace is fell to 10 -2 PA, then open the argon valve, carrying argon to rinse the chemical gas phase deposited furnace while closing the vacuum valve to remove other gases such as oxygen in the chemical gas deposit. When the air pressure in the stove rises to normal pressure, the argon valve is adjusted to keep the argon flow at 120 sccm while opening the exhaust valve of the chemical gas depositing furnace. Under the protection of 120 SCCM argon, the furnace was tapered at a rate of...

Example Embodiment

[0055] Example 2

[0056] Step S1: The copper foil is cut according to the mold size, alternately laminated in a mold in a 0.1 g of copper foil and 3 g of copper powder, and is formed into a mold, and a ingot is formed, and the ingot is formed, and the like is 8 MPa.

[0057] Step S21: The ingot is placed in a crucible, and the intermediate position of the chemical gas phase deposit; first, the chemical gas phase deposit furnace is evacuated, so that the air pressure in the chemical gas deposits slowly decreases, until the furnace is fell to 10 -2 PA, then open the argon valve, carrying argon to rinse the chemical gas phase deposited furnace while closing the vacuum valve to remove other gases such as oxygen in the chemical gas deposit. When the air pressure in the stove rises to normal pressure, the argon valve is adjusted to maintain the argon flow at 100 Sccm while opening the exhaust valve of the chemical gas depositing furnace. Under the protection of 100 SCCM argon, the furn...

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Abstract

The invention discloses a method for growing graphene on a structured copper base, a cable core material and a preparation method of the cable core material. The method for growing the graphene on the structured copper base comprises the following steps of S1, alternately stacking copper powder and copper foil into a mold, and carrying out isostatic pressing treatment molding to form an ingot; and S2, growing the graphene on the ingot through a chemical vapor deposition method to form the copper-based graphene. The formed copper-based graphene is subjected to re-pressing, sintering and hot sintering wire drawing forming in sequence, and the cable core material is prepared; and the prepared cable core material comprises a copper material and the graphene, wherein the copper material comprises the copper foil and the copper powder, and the copper foil and the copper powder are coated with the graphene. The copper powder and the copper foil are alternately stacked to carry out structural treatment on the copper base, so that the service life of a copper-based graphene material is prolonged, and the performance of the copper-based graphene material is improved; and the cable core material formed by further processing generates obvious anisotropy, and the phenomena of non-uniform current distribution and equivalent resistance increase caused by alternating current in the use of the cable core material are improved.

Description

technical field [0001] The invention relates to the technical field of graphene materials, in particular to a method for growing graphene on a structured copper base, a cable core material and a preparation method thereof. Background technique [0002] The resistivity of copper is 1.05 times that of silver, and its price is only one tenth of that of silver. Therefore, under the premise of meeting the requirements of electrical conductivity, copper has higher cost performance in industrial growth. However, copper powder is not resistant to oxidation and Corrosion, easy to be oxidized to copper oxide in the environment, and patina will be formed in humid air. In order to ensure that the copper-based material will not fail when used in these environments, it is particularly important to make a protective layer on its surface. Due to its excellent electrical and thermal conductivity, graphene is used in various industries, such as electrode materials, supercapacitors, thermally...

Claims

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Application Information

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IPC IPC(8): B22F7/04B22F3/16C23C16/26H01B1/02H01B1/04H01B13/00
CPCB22F7/04B22F3/16C23C16/26H01B13/00H01B13/0016H01B1/026H01B1/04
Inventor 马瑜沈晗睿杨军付金良张文卿
Owner SHANGHAI SIMBATT ENERGY TECH CO LTD
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