Preparation method of boron, nitrogen and sulfur ternary doped reduced graphene oxide material

A technology of graphene and graphene, which is applied in the field of preparation of reduced graphene oxide materials, can solve the problems of affecting electron transmission and large resistance value, and achieve the effect of safe experimental operation, simple steps and improved carrier mobility

Pending Publication Date: 2022-01-11
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the graphene oxide material prepared by the improved Hummer method has a large specific surface area, its resistance value is often very large because there are a large number of oxygen-containing groups such as hydroxyl groups and carboxyl groups on the surface, which affects the transmission of electrons.

Method used

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  • Preparation method of boron, nitrogen and sulfur ternary doped reduced graphene oxide material
  • Preparation method of boron, nitrogen and sulfur ternary doped reduced graphene oxide material
  • Preparation method of boron, nitrogen and sulfur ternary doped reduced graphene oxide material

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Experimental program
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Effect test

Embodiment 1

[0026] Pretreatment of graphene oxide:

[0027] a. The graphene oxide liquid modified by the Hummers method was freeze-dried for 18 hours, placed in a vacuum drying oven at a temperature of 30°C, dried for 10 hours, and then placed in a mortar for grinding for 20 minutes to obtain fine and uniform particles Graphene oxide powder;

[0028] Configuration of the suspension:

[0029] b. Weigh 3g of thiourea and 1.2g of boric acid and put them in a beaker, add 50ml of deionized water and stir magnetically at room temperature for 15min. After the solid medicine in the cup is completely dissolved, a colorless and transparent solution is obtained; then Add 0.1 g of the graphene oxide powder processed in step a into the solution, and ultrasonically treat it for 1.5 h under the condition of an ice bath to obtain a graphene oxide suspension; wherein the mass fraction of thiourea in the mixed solution is 5.52%, and the mass fraction of boric acid The mass fraction of graphene oxide is a...

Embodiment 2

[0037] Pretreatment of graphene oxide:

[0038] a. The graphene oxide liquid improved by the Hummers method was freeze-dried for 20 hours, dried in a vacuum drying oven at a temperature of 35°C for 8 hours, and then placed in a mortar for grinding for 15 minutes to obtain fine and uniform oxidized particles. Graphene powder;

[0039] Configuration of the suspension:

[0040] b. Weigh 2g of thiourea and 1.1g of boric acid and put them in a beaker, add 50ml of deionized water and stir magnetically at room temperature for 20min. After the solid medicine in the cup is completely dissolved, a colorless and transparent solution is obtained, and then In step a, 0.1 g of the treated graphene oxide powder is added to the solution, and ultrasonically treated for 1 h under the condition of an ice bath, wherein the mass fraction of thiourea in the mixed solution is 3.76%, the mass fraction of boric acid is 2.07%, and the graphene oxide The mass fraction of is about 0.1880%; the mass rat...

Embodiment 3

[0048] Pretreatment of graphene oxide:

[0049] a. The graphene oxide liquid modified by the Hummers method was freeze-dried for 15 hours, dried in a vacuum drying oven at a temperature of 40°C for 12 hours, and then placed in a mortar for grinding for 10 minutes to obtain fine and uniform oxidized particles. Graphene powder;

[0050] Configuration of the suspension:

[0051] b. Weigh 1.5g of thiourea and 1g of boric acid and put them in a beaker, add 50ml of deionized water and stir magnetically at room temperature for 30min. After the solid medicine in the cup is completely dissolved, a colorless and transparent solution is obtained, and then Add 0.1 g of the graphene oxide powder processed in step a into the solution, and ultrasonically treat it for 2 h under the condition of an ice bath, wherein the mass fraction of thiourea in the mixed solution is 4.75%, the mass fraction of boric acid is 1.90%, and the mass fraction of graphene oxide The mass fraction is about 0.1901%...

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Abstract

The invention provides a preparation method of a boron, nitrogen and sulfur ternary doped reduced graphene oxide material. The method comprises the following steps: taking graphene oxide as a base material, taking thiourea and boric acid as a reducing agent and a doping agent, preparing thiourea and boric acid into a solution, adding graphene oxide powder, and putting a suspension obtained after ultrasonic treatment into a hydrothermal synthesis reaction kettle for hydrothermal treatment; and then carrying out heat treatment on the solid-loaded substance after suction filtration and drying under the protection of inert gas to obtain the boron, nitrogen and sulfur ternary doped reduced graphene oxide material. The method is simple in step, safe in experimental operation, low in preparation cost and excellent in material performance. The boron, nitrogen and sulfur ternary doped reduced graphene oxide material obtained by the method has a larger specific surface area, and the surface defect degree and porosity of the material are further increased, so that the carrier mobility is improved, and the material can be widely applied to the field of temperature sensing.

Description

technical field [0001] The present invention mainly relates to the field of preparation of nanomaterials and temperature sensing, in particular to a preparation method of a ternary doped reduced graphene oxide material, which has a large specific surface area and a large porosity and Great carrier mobility. Background technique [0002] Temperature is a physical quantity related to people's normal production and life, and it will change at any time in time and space. Therefore, it is extremely important for us to monitor the temperature accurately in real time. The temperature sensor is a sharp tool to realize accurate temperature measurement. Traditional temperature sensors are often made of rigid materials such as metals, metal oxides, or inorganic semiconductors. The biggest disadvantage of temperature sensing devices made of such materials is that they are easy to break after bending, which affects the normal measurement work. And the flexible temperature sensor that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184C01B32/198G01K7/22
CPCC01B32/184C01B32/198G01K7/22C01B2204/22
Inventor 孔雯雯朱建朋陈龙常爱民
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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