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Perovskite light emitting diode and preparation method thereof

A light-emitting diode and perovskite technology, which is applied in the field of new semiconductor light-emitting devices, can solve problems affecting the service life of the device, perovskite decomposition, and damage to electrical properties, and achieve the effects of improving service life, improving stability, and reducing erosion

Pending Publication Date: 2022-02-25
THE CHINESE UNIVERSITY OF HONG KONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, after a perovskite light-emitting diode works for a long time, the applied electric field causes the ion movement in the perovskite to generate a large number of structural defects and impurities, which will lead to the gradual decomposition of the perovskite or further migration to the hole or electron injection layer. And the metal electrode layer destroys its electrical properties, thus affecting the service life of the device

Method used

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  • Perovskite light emitting diode and preparation method thereof
  • Perovskite light emitting diode and preparation method thereof
  • Perovskite light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) The ITO glass of the transparent electrode was etched, and then ultrasonically cleaned with surfactant, deionized water, acetone, isopropanol and ethanol for 10 minutes, and then the electrode surface was treated with ultraviolet ozone.

[0043] (2) Dissolve 1.017 g of tetramethoxyammonium hydroxide pentahydrate in 10 ml of ethanol, dissolve 0.6719 g of zinc acetate in 30 ml of dimethyl sulfoxide, mix and stir the two for 24 hours and then use ethyl acetate Esters were extracted, and the deposited zinc oxide solid particles were extracted with a centrifuge, and then dissolved in 5 ml of ethanol. The ethanol solution of zinc oxide was spin-coated on the ITO at 5000 rpm, and heat-treated on a hot stage at 150° C. for 30 minutes to obtain a ZnO electron injection layer. The thickness of ZnO was about 30 nanometers.

[0044] (3) PEIE was dissolved in methoxyethanol with a solubility of 4 mg / ml, spin-coated with a spin coater at 5000 rpm, and then placed on a hot stage a...

Embodiment 2

[0051] A perovskite light-emitting diode was obtained in the same manner as in Example 1 except that CH(NH 2 ) 2 I. CH 3 NH 2 I, CsI and PbI 2 Dissolve in dimethylformamide (DMF) solvent at a molar ratio of 2.2:0.15:0.1:1; 5-AVAI and PbI 2 The ratio of is 0.3; the concentration of PMMA is 2 mg / ml; the concentration of TFB is 14 mg / ml; the thickness of molybdenum oxide film is 10 nm and the thickness of gold electrode is 80 nm.

[0052] The current-voltage curve of the perovskite light-emitting diode of embodiment 2 and the relationship between irradiance and voltage are shown in Figure 4 (a) of. The normalized external quantum efficiency degradation trend with time at an applied current density of 100 mA / cm2 is shown in Figure 4 (b) of.

[0053] It can be seen from the above experimental data that the introduction of the PMMA layer can suppress the degradation of the external quantum efficiency, thereby greatly improving the service life of the device.

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Abstract

The present invention relates to a perovskite light emitting diode, comprising: a first electrode, a second electrode facing the first electrode, a light emitting layer including perovskite between the first electrode and the second electrode, a hole transport region formed between the first electrode and the light emitting layer, and an electron transport region arranged between the second electrode and the light emitting layer; a PMMA (polymethyl methacrylate) layer with the thickness of 3-10 nanometers is directly arranged on one side surface or two side surfaces of the light-emitting layer.

Description

technical field [0001] The invention relates to a novel semiconductor light-emitting device, in particular to a perovskite light-emitting diode and a preparation method. Background technique [0002] Organic-inorganic hybrid perovskite materials have great potential for practical applications in the fields of solar cells, light-emitting diodes, lasers, photo-splitting water, and photodetectors, and have attracted extensive attention and research in the past decade. Hybrid perovskite materials have the advantages of both organic and inorganic semiconductor materials, and are suitable for low-temperature solution processing of organic materials and large-area film-forming processes. ≤λ≤800nm), high luminous efficiency and good color purity, etc., so the light-emitting diodes based on hybrid perovskites have broad application prospects in the field of light emission, especially in the field of display. [0003] However, after a perovskite light-emitting diode works for a long ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56B82Y10/00B82Y30/00B82Y40/00
CPCB82Y10/00B82Y30/00B82Y40/00H10K85/141H10K50/18H10K50/11H10K50/844H10K71/00
Inventor 许建斌龙明珠
Owner THE CHINESE UNIVERSITY OF HONG KONG