Tungsten-based columnar crystal high-entropy alloy plasma facing material and preparation method thereof
A high-entropy alloy and plasma technology, which is applied in metal material coating process, greenhouse gas reduction, gaseous chemical plating, etc., can solve the problems of columnar crystal high-entropy alloys that have not been reported, and achieve improved resistance to neutron irradiation. capacity, reduced fuel retention, high recombination rate
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0020] Using the chemical vapor deposition method, the implementation steps are:
[0021] The required fluorinated gas by atomic percentage WF 6 35%, TaF 5 20%, CrF 3 15%, VF 4 10%, TiF 3 10%, YF 3 10% is fully mixed and passed into the introduction device, and a rolled tungsten plate is placed in the reaction chamber as a deposition substrate. After the substrate is heated to 600°C by electricity, the mixed gas and hydrogen are passed into the reaction chamber at a ratio of 1:2.28. After the chemical reaction, the deposited layer is obtained on the substrate, deposited to the required thickness and then cooled and taken out. The atomic percentages of the obtained tungsten-based columnar high-entropy alloy are: W35%, Ta 20%, Cr 15%, V 10%, Ti 10%, Y 10%, and the columnar crystal size is 50 μm. After irradiation with deuterium plasma, the retention rate was measured by thermal desorption spectroscopy to be 3×10 -6 .
Embodiment 2
[0023] Using the chemical vapor deposition method, the implementation steps are:
[0024] The required fluorinated gas by atomic percentage WF 6 30%, TaF 5 25%, CrF 3 25%, VF 4 10%, TiF 3 5%, YF 3 5% is fully mixed and passed into the introduction device, and the rolled tungsten plate is placed in the reaction chamber as a deposition substrate. Heat the substrate to 800°C with electricity, and pass the mixed gas and hydrogen into the reaction chamber at a volume ratio of 1:2.25. After the chemical reaction, the deposited layer can be obtained on the substrate, deposited to the required thickness and then cooled and taken out. The atomic percentages of the obtained tungsten-based columnar high-entropy alloy are: W 30%, Ta 25%, Cr 25%, V 10%, Ti 5%, Y 5%, and the columnar crystal size is 30 μm. After irradiation with deuterium plasma, the retention rate was measured by thermal desorption spectroscopy as 1×10 -6 .
Embodiment 3
[0026] Using the chemical vapor deposition method, the implementation steps are:
[0027] The above-mentioned fluorinated gases are expressed in atomic percent WF 6 20%, TaF 5 10%, CrF 3 10%, VF 4 20%, TiF 3 20%, YF 3 20% is fully mixed and passed into the introduction device, and the rolled tungsten plate deposition substrate is put into the reaction chamber. After heating the substrate with electricity to 1000°C, the mixed gas and hydrogen gas are passed into the reaction chamber at a volume ratio of 1:2.0. After the chemical reaction, the deposited layer is obtained on the substrate, deposited to the required thickness and then cooled and taken out. The atomic percentages of the obtained tungsten-based columnar high-entropy alloy are: W20%, Ta 10%, Cr 20%, V 20%, Ti 20%, Y 20%, and the columnar crystal size is 10 μm. After being irradiated by deuterium plasma, the retention rate measured by thermal desorption spectroscopy was 5×10 -7 .
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com