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High-speed copper electroplating solution and ceramic substrate pattern electroplating method thereof

A high-speed electroplating, ceramic substrate technology, applied in circuits, sputtering plating, ion implantation plating, etc., can solve the problems of low preparation efficiency, difficult heat dissipation of power device packaging, poor thickness uniformity, etc., achieving simple components and shortening. The effect of plating time and thickness uniformity

Active Publication Date: 2022-03-08
武汉利之达科技股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies in the prior art, the present invention provides a high-speed copper electroplating solution and its ceramic substrate pattern electroplating method, which solves the problems of low preparation efficiency and poor thickness uniformity of the existing ceramic substrate pattern electroplating, and solves the problem of power device packaging heat dissipation. problem

Method used

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  • High-speed copper electroplating solution and ceramic substrate pattern electroplating method thereof
  • High-speed copper electroplating solution and ceramic substrate pattern electroplating method thereof
  • High-speed copper electroplating solution and ceramic substrate pattern electroplating method thereof

Examples

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Effect test

Embodiment 1

[0052] A high-speed copper electroplating solution, the components in every liter of solution are:

[0053] Copper sulfate: 120g;

[0054] Sulfuric acid: 60g;

[0055] Chloride ion: 55mg;

[0056] Sodium thiazolinyl dithiopropane sulfonate: 6 mg;

[0057] Polyethylene glycol: 0.3g;

[0058] DI pure water: balance (keep the pH value at 0.01);

[0059] The preparation process of high-speed electroplating copper solution (1.5L) is as follows: take 500mL of DI pure water, add 180g of copper sulfate in sequence; 92g of 98% sulfuric acid, 90.6mg of sodium chloride, 9mg of sodium thiazoline dithiopropanesulfonate, polyethylene Alcohol 0.45g, stir until fully dissolved, add DI pure water to 1.5L liquid level (pH value is 0.01).

Embodiment 2

[0061] The difference from Example 1 is that the concentration of accelerator sodium thiazolinyl dithiopropane sulfonate per liter of solution components in Example 2 is: 8mg.

Embodiment 3

[0063] The difference from Example 1 is that the concentration of the inhibitor polyethylene glycol 8000 per liter of solution components in Example 3 is 0.4 g.

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Abstract

The invention discloses a high-speed copper electroplating solution and a ceramic substrate pattern electroplating method thereof. The solution is an acidic copper sulfate system, and comprises the following main salts according to concentration: 120-150g / L of copper sulfate and 60-80g / L of sulfuric acid; the additive comprises the following components: 6-10 mg / L of an accelerator, 0.3-0.4 g / L of an inhibitor and 50-70 mg / L of chloride ions. When the pattern of the ceramic substrate is electroplated, bubbling, ultrasound and other auxiliary processes for strengthening mass transfer are needed. The electrocoppering solution is simple in component, high in limiting current density, high in current efficiency, safe and environmentally friendly, high-speed copper plating of fine patterns with the line width / line distance of 50-500 micrometers can be achieved under the large current density, the growth rate is larger than 100 micrometers / h, a copper plating layer is bright in surface, uniform in thickness, compact in structure, low in impurity content and high in corrosion resistance, and the electrocoppering effect is good. The method is especially suitable for preparing a metal circuit layer on the surface of a ceramic substrate.

Description

technical field [0001] The invention relates to the field of microelectronics manufacturing, in particular to a high-speed electroplating copper solution and a pattern electroplating method for a ceramic substrate. Background technique [0002] With the development of high integration and high power of power devices, the power density of devices has increased significantly. The device mainly relies on packaging to achieve heat dissipation, and the packaging substrate material has a great influence on the heat dissipation performance of the package. Ceramic materials have performance advantages such as high thermal conductivity, good heat resistance, high insulation, small dielectric constant, high strength, and thermal matching with chip materials, which can meet the heat dissipation requirements of power devices. In the process of preparing ceramic substrates, it is necessary to prepare circuit patterns by electroplating copper to realize signal transmission. For micron-sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D5/02C25D5/34C25D7/12C23C14/04C23C14/18C23C14/35C23C28/02
CPCC25D3/38C25D5/34C25D5/02C25D7/123C23C14/35C23C14/185C23C14/042C23C28/023Y02P10/20
Inventor 刘学昌刘松坡
Owner 武汉利之达科技股份有限公司
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