Ceramic heating plate extraction electrode connecting structure and connecting method thereof

Abstract

The invention discloses a ceramic heating plate extraction electrode connecting structure and a connecting method thereof.The ceramic heating plate extraction electrode connecting structure comprises a connector, an extraction electrode and a connecting hole which are buried in a ceramic base body, the extraction electrode comprises an electrode pipe section and an electrode rod section, and a first gap is formed between the electrode pipe section and the connecting hole; and a second gap is arranged between the electrode rod section and the electrode tube section, and the width of the gap can ensure the uniformity of heat conduction while avoiding the cracking phenomenon caused by thermal expansion. Ball-milling aluminum oxide powder, zirconium oxide powder and silicon oxide powder according to a certain proportion by using ethanol as a medium, spraying the ball-milled powder on the connecting position of the connecting hole and the extraction electrode, drying to volatilize the ethanol, putting the whole part into a vacuum brazing furnace for brazing at the brazing temperature of 800-1200 DEG C, the vacuum degree of less than or equal to 10-4mmHg, and the heat preservation time of 10-180 minutes, so as to obtain a finished product. And after the heating is finished, cooling to room temperature under the protection of inert atmosphere to form the ceramic composite powder coating with 30-60% of voids.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing equipment, and in particular to a connection structure and connection method for lead electrodes of a ceramic heating plate. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) equipment is the key equipment for semiconductor chip production. The core issue of CVD equipment is how to ensure the uniformity and repeatability of material growth. As a part of CVD equipment, the chip heating plate contains The preparation method of the electrode and heating structure will affect the uniformity of the temperature of the heating plate, which in turn will affect the uniformity and repeatability of the chip growth process. [0003] CVD is a key equipment in the semiconductor chip manufacturing process. For a long time, the core technology of CVD has been basically monopolized by European and American countries. The key issue of CVD core tec...

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Problems solved by technology

[0007] The biggest limitation of this technology is that since the selected ceramic substrate is a component mainly composed of one selected from the group consisting of Al2O3, AlN, MgO, Y2O3 and SiC, the power supply components are Ti, Cu, Ni, One selected from the group consisting of Mo, CuW, W and their alloys and FeNiCo alloys, these materials will cause a relatively large difference in thermal expansion coefficient

[0008] Therefore, the comparison document emphasizes that the thermal expansion coefficient difference D between the ceramic substrate and the power supply component must meet the following range: -1.5≤D≤6, and the unit is ppm / K. The expansion coefficients in the above range are too different, and the reserved expansion is required The gap will be very large, so that the electrode rod will be easily damaged under the condition of non-stop plugging or unsuitable plugging force. At the same time, the increase of the gap will increase the amount of filler used and increase the cost.

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