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Preparation method of condensation type periodic nano bowl structure electrode capable of supporting high-temperature annealing

A high-temperature annealing and concentrating technology, applied in the direction of climate sustainability, sustainable manufacturing/processing, circuits, etc., can solve the problems of film damage, low success rate, uncontrollable nanobowl shape, etc., to improve electrode performance, The effect of improving semiconductor performance

Pending Publication Date: 2022-03-11
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, some nanobowl structure electrodes have many shortcomings. The first is that the shape of the nanobowl cannot be controlled, and the second is that the success rate is low in the process of flipping the metal film to other substrates, such as the patent CN103626119A of a nano-metal ball bowl array structure. The preparation method mainly uses scotch tape and heat-cured material to peel off, which is easy to cause damage to the film during the peeling process, and the tape and heat-cured material cannot withstand high temperature annealing, and the preparation of the electrode cannot be perfected in subsequent improvements
The third is the combination of nanobowl array and semiconductor, Yang Liu et al [Yang Liu, Kou Pengfei, He Nan, Dai Hao, He Sailing. Anomalous light trapping enhancement in a two-dimensional gold nanobowl array with an amorphous silicon coating. [J] .Optics express, 2017, 25 (13)] Using PMMA to flip the metal film, using the combination of amorphous structure a-Si semiconductor and nanobowl, although it has a good effect without annealing treatment, it is not suitable to choose other more efficient Crystal structure semiconductor materials, because most semiconductors have a crystal structure, the change of the crystal structure after high temperature annealing can greatly improve the performance of the semiconductor, and finally improve the performance of the electrode

Method used

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  • Preparation method of condensation type periodic nano bowl structure electrode capable of supporting high-temperature annealing
  • Preparation method of condensation type periodic nano bowl structure electrode capable of supporting high-temperature annealing
  • Preparation method of condensation type periodic nano bowl structure electrode capable of supporting high-temperature annealing

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Embodiment 1

[0039] A method for preparing a light-concentrating periodic nanobowl structure electrode that can support high-temperature annealing, comprising the following steps:

[0040] 1) Silicon wafer cleaning and hydrophilization treatment: first cut the silicon wafer into a size of 2cm*2cm, then use acetone, isopropanol, absolute ethanol, and deionized water to ultrasonically clean it for 10 minutes, and put the silicon wafer into the plasma after drying In the cleaning machine, the adjustment parameters are power 30w, air environment, and flow rate 10sccm. After completion, start vacuuming. When the pressure is less than or equal to 38Pa, turn on the cleaning switch, turn it off after 10 minutes, open the air inlet, and open the chamber door to take out the sample.

[0041]2) Preparation of PS sphere array: Clean the Petri dish with a diameter of 30 cm and fill it with deionized water, let it stand for 10 minutes, and prepare a 500 nm PS sphere solution (PS: 1% H 2 SO 4 : 1% styre...

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Abstract

The invention belongs to the field of preparation of micro-nano photon structure photoelectrodes, and particularly relates to a preparation method of a condensation type periodic nano bowl structure electrode capable of supporting high-temperature annealing. Comprising the following steps: 1) cleaning a substrate and carrying out hydrophilic treatment; (2) self-assembling the prepared PS ball suspension onto a treated substrate; 3) spin-coating the soluble solution on the surface of the sample in the step 2); 4) sequentially plating a metal layer, a bonding layer and a bonding layer on the surface of the sample in the step 3); (5) separating the film on the surface in the step (4) from the substrate by using a hot strong alkali solution, then transferring to a substrate, and bonding by using an alkaline solution; (6) PS balls are removed; and 7) depositing a semiconductor layer on the surface in the step 6), and performing annealing treatment. The size and the shape of the nano bowl can be changed, the success rate of transferring the metal film is higher and firmer, the nano bowl is combined with a semiconductor, high-temperature annealing treatment can be borne, the cost is low, large-area preparation can be achieved, and the nano bowl has wide application prospects in photocatalysis and other photoelectric devices.

Description

technical field [0001] The invention belongs to the field of preparation of micro-nano photon structure photoelectrodes, and in particular relates to a preparation method of a light-concentrating periodic nanobowl structure electrode that can support high-temperature annealing. Background technique [0002] With the rapid development of human society and economy, people's demand for energy is increasing. Traditional fossil energy (petroleum, coal, etc.) is a non-renewable energy, and the problem of environmental pollution has become increasingly prominent due to the excessive use of traditional energy. Therefore, people are gradually shifting their attention to new clean energy sources such as solar energy, wind energy, and nuclear energy. Among many new energy sources, solar energy has attracted widespread attention due to its wide distribution and large total amount. At present, there are many ways to utilize solar energy, such as: photovoltaic, photothermal, photochemic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0232H01L31/18
CPCH01L31/022433H01L31/0232H01L31/18Y02P70/50
Inventor 埃泽尔·马丁·阿金诺古李彩涛楼姝婷王新周国富迈克尔·吉斯格
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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